A5060575936- Nuclear Materials and Properties
- Fusion materials and technologies
- Ion-surface interactions and analysis
- Nuclear materials and radiation effects
- Electronic and Structural Properties of Oxides
- Semiconductor materials and devices
- Advanced ceramic materials synthesis
- Radioactive element chemistry and processing
- Nuclear reactor physics and engineering
- Microstructure and mechanical properties
- Advanced Materials Characterization Techniques
- Muon and positron interactions and applications
- Metal and Thin Film Mechanics
- Ferroelectric and Piezoelectric Materials
- Silicon Carbide Semiconductor Technologies
- GaN-based semiconductor devices and materials
- Quantum and electron transport phenomena
- High-pressure geophysics and materials
- Magnetic properties of thin films
- Silicon and Solar Cell Technologies
- Hydrogen embrittlement and corrosion behaviors in metals
- Luminescence Properties of Advanced Materials
- Geological and Geochemical Analysis
- Physics of Superconductivity and Magnetism
- Integrated Circuits and Semiconductor Failure Analysis
Institut National de Physique Nucléaire et de Physique des Particules
2015-2024
Centre National de la Recherche Scientifique
2015-2024
Université Paris-Saclay
2015-2024
Laboratoire de Physique des 2 Infinis Irène Joliot-Curie
2020-2024
North Carolina State University
2020
Campus France
2002-2019
Université Paris-Sud
2008-2019
Protéomique, Réponse Inflammatoire et Spectrométrie de Masse
2001-2016
Mental Health Consumer Survivor Network
2012-2016
Conditions Extrêmes et Matériaux Haute Température et Irradiation
2008-2012
This paper presents a study of the damage production in yttria-stabilized cubic zirconia single crystals irradiated with medium-energy (from 30 to 450 keV) heavy ions He Cs). The disorder created two sublattices (Zr4+ and O2−) lattice sites were determined as function irradiation fluence by situ Rutherford backscattering channeling experiments using 3 MeV 4He ion beam. Damage is at depth close projected range low fluences growths towards greater depths increasing once saturation has been...
The authors present an improved geometry for a micron-scale pad the injection of vortex domain walls (VDWs) into ferromagnetic nanowires. supports single magnetization state, chirality which can be controlled simply by field saturation along specific direction. We show, using Lorentz transmission electron microscopy, that utilization such pads allows VDWs injected attached wire to predetermined. Furthermore, state is highly stable and survives repeated depinning from asymmetric notch located...
Combining electron paramagnetic resonance, density functional theory, and positron annihilation spectroscopy (PAS), we identify the nitrogen interstitial defect in GaN. The isolated is unstable transforms into a split configuration $(\mathrm{N}\mathrm{\text{\ensuremath{-}}}\mathrm{N}{)}_{\mathrm{N}}$. It generated by particle irradiation with an introduction rate of primary defect, pins Fermi level at ${E}_{C}\ensuremath{-}1.0\text{ }\text{ }\mathrm{eV}$ for high fluences, anneals out...
Superconducting qubits have arisen as a leading technology platform for quantum computing, which is on the verge of revolutionizing world's calculation capacities. Nonetheless, fabrication computationally reliable qubit circuits requires increasing coherence lifetimes, are predominantly limited by dissipations two-level system defects present in thin superconducting film and adjacent dielectric regions. In this paper, we demonstrate reduction losses three-dimensional radio frequency niobium...
Using a combination of advanced characterization tools (positron annihilation spectroscopy, conductive-tip atomic force microscopy, and high-field magnetotransport), we have studied the extension, origin properties high mobility electron gas (HMEG) generated by etching SrTiO3 surfaces with Ar+ ions. Contrary to previous assumptions, show that this HMEG is not confined nanometric thickness but extends few micrometer from surface. We discuss unanticipated large spatial extension in terms...
Silicon carbide is an interesting material for GEN IV fission reactor projects because of its excellent properties. However, these properties will be altered under extreme conditions such as irradiation accumulation damage. Mechanisms playing a role in defect formation require further studies the case high energy heavy ion irradiations. In this work silicon single crystal slice has been implanted with 20 MeV Au ions and probed by using Raman spectrometry. The resulting spectra recorded...
Abstract In this work both 22Na based positron lifetime spectroscopy (PALS) and slow beam Doppler annihilation‐ray broadening spectrometry (SPBDB) have been used to characterize respectively the bulk first micron under surface of sintered UO 2 disks that polished annealed at high temperature (1700 °C/24 h/ArH ). Results show presence negative ions are tentatively identified negatively charged oxygen atoms located in interstitial sites. The annihilation characteristics lattice determined...
We have carried out positron-annihilation spectroscopy to characterize the spatial distribution and nature of vacancy defects in insulating as-received as well reduced ${\text{SrTiO}}_{3}$ substrates exhibiting high-mobility conduction. The were either by ion etching substrate surfaces or doping with vacancies during thin-film deposition at low pressure high temperature. show that Ti are native homogeneously distributed substrates. In contrast, dominant same both etched crystals film growth,...
$a$-Nb${}_{x}$Si${}_{1\ensuremath{-}x}$ thin films with thicknesses down to 25 \AA{} have been structurally characterized by transmission electron microscopy measurements. As-deposited or annealed are shown be continuous and homogeneous in composition thickness, up an annealing temperature of 500 ${}^{\ensuremath{\circ}}\mathrm{C}$. We carried out low-temperature transport measurements on these close the superconductor-to-insulator transition (SIT) a qualitative difference between effect...
The ability to generate a change of the lattice parameter in near-surface layer controllable thickness by ion implantation strontium titanate is reported here using low-energy He+ ions. induced strain follows distribution within typical 200 nm as obtained from structural analysis. Due clamping effect underlying layer, only perpendicular expansion observed. Maximum distortions up 5–7% are with no evidence amorphisation at fluences 1016 ions/cm2 and energies range 10–30 keV.