Gabriel Agnello

ORCID: 0000-0002-6495-559X
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About
Contact & Profiles
Research Areas
  • Glass properties and applications
  • Semiconductor Quantum Structures and Devices
  • Semiconductor Lasers and Optical Devices
  • Quantum Dots Synthesis And Properties
  • Luminescence Properties of Advanced Materials
  • Material Dynamics and Properties
  • Building materials and conservation
  • Advanced Semiconductor Detectors and Materials
  • Surface Roughness and Optical Measurements
  • ZnO doping and properties
  • Photonic and Optical Devices
  • Thin-Film Transistor Technologies
  • Cultural Heritage Materials Analysis
  • Advanced Sensor and Energy Harvesting Materials
  • Advanced Surface Polishing Techniques
  • Semiconductor materials and interfaces
  • Iron oxide chemistry and applications
  • Advanced Materials Characterization Techniques
  • Carbon Nanotubes in Composites
  • Industrial Vision Systems and Defect Detection
  • Ga2O3 and related materials
  • Polymer Nanocomposites and Properties
  • Electronic and Structural Properties of Oxides
  • Spectroscopy and Quantum Chemical Studies
  • Semiconductor materials and devices

Corning (United States)
2015-2024

New York State College of Ceramics
2015-2019

Alfred University
2015-2019

University at Albany, State University of New York
2003-2006

Above room temperature ferromagnetic behavior is achieved in Si through Mn ion implantation. Three-hundred-keV ${\mathrm{Mn}}^{+}$ ions were implanted to 0.1% and 0.8% peak atomic concentrations, yielding a saturation magnetization of $0.3\phantom{\rule{0.3em}{0ex}}\mathrm{emu}∕\mathrm{g}$ at $300\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ for the highest concentration as measured using SQUID magnetometer. The increased by $\ensuremath{\sim}2\ifmmode\times\else\texttimes\fi{}$ after annealing...

10.1103/physrevb.71.033302 article EN Physical Review B 2005-01-04

Mn-implanted Si was investigated using transmission electron microscopy to gain insight into the structure of implanted region. Diffraction contrast images, selected area diffraction patterns, and high resolution images samples were acquired before after postimplant annealing at 800°C. The annealed revealed formation nanometer size precipitates distributed throughout Analysis pattern determined that most prominent lattice spacing crystallites is 2.15Å. This indicates probable phase MnSi1.7...

10.1116/1.2189265 article EN Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 2006-06-23

Abstract Adsorption isotherm of water on silica (modeled with fused quartz) and calcium‐boroaluminosilicate (Ca‐BAS) glass surfaces as a function relative humidity (RH) was studied using Fourier transform infrared (FTIR) spectroscopy. The effective thickness the adsorbed layer distribution hydrogen bonding interactions molecules in were determined by comparing transmission FTIR spectra collected at Brewster incidence angle theoretically calculated spectra. In sub‐monolayer regime (<30%...

10.1111/jace.17540 article EN Journal of the American Ceramic Society 2020-10-27

The surface resistivity of boroaluminosilicate display glasses, which may affect the downstream panel manufacturing, varies with relative humidity (RH) environment, but origin this RH dependence has not been well understood. We have measured water adsorption behavior on Corning Eagle XG (Glass-E) and Lotus NXT (Glass-L) glass panels using Brewster angle transmission infrared spectroscopy. IR spectra adsorbed were analyzed to obtain effective thickness water, distribution hydrogen-bonding...

10.1021/acs.langmuir.3c02595 article EN Langmuir 2024-01-05

Using photoluminescence (PL) at 77–420K and high-energy proton implantation (1.5MeV, dose up to 3×1014cm−2) we have studied the thermal quenching of PL defect tolerance self-assembled shape-engineered InAs quantum dots (QDs) embedded into GaAs wells (QWs). At room temperature, QDs appeared withstand two orders magnitude higher doses than QWs without degradation. A simple dynamic model was used account for both temperature dependence efficiency. low temperatures, defect-related is mainly...

10.1063/1.2037872 article EN Journal of Applied Physics 2005-09-01

Particulates adhered to glass surfaces can result in manufacturing defects during display module fabrication. The adhesion force is highly sensitive the water meniscus formed humid environments and be examined experimentally as a function of relative humidity using atomic microscopy by measuring pull-off between flat surface either spherical or cone-shaped probe tip. In this work, effective thickness hydrogen bonding interaction adsorbed were probed transmission FTIR at Brewster's angle with...

10.1021/acsanm.2c03938 article EN ACS Applied Nano Materials 2022-11-10

Abstract Recent experiments on flat, multicomponent glass surfaces have suggested that a particular surface's propensity to adsorb water plays critical role in how surface accumulates/dissipates electrical charge. A key driver for surface‐water reactivity may be structural defect concentration(s) at the surface, which can largely influenced by bulk composition. To further explore these hypotheses, series of ternary calcium aluminosilicate ( CAS ) glasses along charge‐balanced join were...

10.1111/ijag.12276 article EN International Journal of Applied Glass Science 2017-05-09

Abstract Surface structures of CAS models with various Al 2 O 3 /CaO ratios, (80:10:10), (70:15:15), (60:20:20), and (50:25:25), have been simulated using classical MD methods. Atomistic surface structures, CN Q n distributions, radial distribution functions, z‐axis concentration profiles, ring‐size distributions were employed to study the structures. While bridging oxygen (BO) triclustered (TBO) concentrations closely mimic those observed in bulk nonbridging (NBO) exhibits a nonlinear trend...

10.1111/ijag.15794 article EN International Journal of Applied Glass Science 2020-05-27

With a goal of development high performance medium for optoelectronic devices, formation InAs self-assembled quantum dots (QDs) in GaAs∕AlAs short period superlattice was studied using primarily situ molecular beam epitaxy techniques including reflection high-energy electron diffraction and Auger spectroscopy. The processes formation, decay QDs overgrowth wetting layers were analyzed with the emphasis on role AlAs or GaAs capping layers. critical coverage QD surfaces measured as function...

10.1116/1.1881634 article EN Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena 2005-05-01

Structures of tunnel pairs consisting InGaAs quantum well (QW) and self-assembled InAs dots (QDs) were employed to improve gain medium in laser diodes. Photoluminescence, transmission electron microscopy electroluminescence used study the influence relative position ground states (GS) energies QW QDs as structure design on properties structures characteristics multi-layer lasers. with different GS separation grown by variation In concentration QWs fixed growth process QDs. An 1160 nm...

10.1117/12.591156 article EN Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE 2005-04-04

As technology in the arena of flat panel display progresses, panels are becoming larger, with higher pixel density and smaller device geometries. The glass sheets utilized said fabrication processes getting larger area Gen 10.5 (2940 mm × 3370 0.5 mm) currently mass production. With increase substrate size decrease dimensions devices fabricated on them, continued trend will be towards greater sensitivity to electrostatic charge possible failure. In this discussion, role charging FPD...

10.1002/sdtp.14171 article EN SID Symposium Digest of Technical Papers 2020-08-01

Glass surfaces play a critical role in several modern applications, and open questions remain as to how the bulk composition of multicomponent glass informs its surface composition—particularly at outermost monolayer. This has important implications for properties such electrostatic charging, wetting, adhesion. Here, we apply high-sensitivity low-energy ion scattering (HS-LEIS) examine systematic series ternary CaO-Al2O3-SiO2 compositions. Analyzed are fresh fracture created under...

10.1016/j.nocx.2023.100156 article EN cc-by-nc-nd Journal of Non-Crystalline Solids X 2023-01-13

Traditional testing methodologies (four point bend and three bend) have limited effectiveness as panel thicknesses decrease due to a variety of interconnected factors. This impacts the ability make reliability predictions based on edge strength measurements. paper provides an improved methodology for ultra‐thin panels through system rollers strategically placed only at glass panel.

10.1002/sdtp.12259 article EN SID Symposium Digest of Technical Papers 2018-05-01

Nanoengineering approach was used to develop an efficient active medium based on self-assembled InAs/GaAs quantum dots (QDs) for laser diodes operating at elevated temperatures. Photoluminescence (PL), transmission electron microscopy, and electroluminescence were study the influence of overgrowth procedure properties multiple-layer QDs. Optical QDs optimized by adjustment a GaAs overlayer thickness prior heating step, responsible truncation pyramid-shaped Triple-layer QD edge-emitting...

10.1117/12.529717 article EN Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE 2004-05-11

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

10.1017/s1431927604886124 article EN Microscopy and Microanalysis 2004-08-01

When a clean glass surface is exposed to humid air, thin water layer forms on the hydrophilic surface. Using ab initio molecular dynamics, we simulate changes in electronic structure of CaO-Al2O3-SiO2 model upon vacuum fracture and subsequent exposure H2O. fractured, dangling bonds form, which lower band gap by ∼1.8 eV compared bulk value due mid-gap states. H2O adsorbs onto vacuum-fractured surface, increases closer that gap. two different hydroxylation methods, find calculated depends...

10.1021/acs.jpcb.2c02550 article EN The Journal of Physical Chemistry B 2022-09-23
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