A5066014899- Graphene research and applications
- MXene and MAX Phase Materials
- Semiconductor materials and interfaces
- 2D Materials and Applications
- Silicon Carbide Semiconductor Technologies
Jiangsu Normal University
2022
Two-dimensional (2D) graphene-like SiC has attracted intense interest recently due to its unique electrical and physical properties. In implementing 2D semiconductors in device applications, one of the main challenges so far been formation a high-quality Schottky barrier owing strong Fermi level pinning (FLP) at interface traditional metal-2D semiconductor contacts. this paper, MXenes Ti3C2T2 (T = F, O, OH) are proposed serve as electrodes for SiC. The structural properties Ti3C2T2/SiC...
In the production of SiC electronic devices, one main challenges is fabrication good Ohmic contacts due to difficulty in finding metals with low Schottky barriers wide band gap SiC. Therefore, reducing barrier height (SBH) at metal/SiC interface great importance. this paper, effects graphene intercalation on SBH different (Ag, Ti, Cu, Pd, Ni, Pt)/4H-SiC interfaces are studied by combining average electrostatic potential and local density states calculation methods based first-principles...
Due to the difficulty of forming a low Schottky barrier at interface metal/SiC contact, preparing Ohmic contacts is still key technical problem in developing SiC devices. In this paper, effects MoS2 intercalation on properties (Al, Ag, Ti, Au, and Mg) systems were investigated by first-principles calculation. The calculations show that all exhibit p-type with strong Fermi level pinning (FLP) interfaces. After inserting layer MoS2, heights are significantly reduced. All metal/MoS2/SiC tuned...