A5003808876- CCD and CMOS Imaging Sensors
- Advanced Optical Sensing Technologies
- Thin-Film Transistor Technologies
- Medical Imaging Techniques and Applications
- Advanced X-ray and CT Imaging
- Semiconductor materials and devices
- Thermal properties of materials
- Thermography and Photoacoustic Techniques
- Image Processing Techniques and Applications
- Advanced Semiconductor Detectors and Materials
- Infrared Target Detection Methodologies
- Analog and Mixed-Signal Circuit Design
- Optical Coatings and Gratings
- Copper Interconnects and Reliability
- Electrical and Bioimpedance Tomography
- Particle Detector Development and Performance
- Optical Coherence Tomography Applications
- Ultrasonics and Acoustic Wave Propagation
- Acoustic Wave Resonator Technologies
- Near-Field Optical Microscopy
- Optical and Acousto-Optic Technologies
- Analytical Chemistry and Sensors
- Nuclear Physics and Applications
- Adhesion, Friction, and Surface Interactions
- Laser Material Processing Techniques
Varex Imaging (United States)
2018
Dartmouth College
2013-2018
Vassar College
2011-2013
The Quanta Image Sensor (QIS) concept and recent work on its associated jot device are discussed. A bipolar a pump-gate described. Both have been modelled in TCAD. As simulated, the has full well of 200e- conversion gain 480uV/e-.
We have measured the attenuation of longitudinal acoustic waves in a series amorphous and nanocrystalline silicon films using picosecond ultrasonics. The were grown modified very high frequency glow discharge method on steel substrates. deposition conditions similar to that used fabrication high-efficiency solar cells. film thicknesses varied so we could distinguish between interface losses intrinsic within films. determine Si be 780 \ifmmode\pm\else\textpm\fi{} 160 cm${}^{\ensuremath{-}1}$...
We present a methodology for generating built-in drift fields in large photodiodes. With the aid of TCAD we demonstrate how non-uniform doping profiles can be implemented standard CMOS process using single additional mask and controlled implant conditions geometry. that resulting profile creates field simulates effect on charge transfer speed. show implementing improve characteristics photodiode.
Early research progress in the realization of Quanta Image Sensor is reported. Simulation binary data acquisition and image formation was performed. Initial analysis simulation a readout signal chain has been performed bounds on power dissipation established. Photodetector device concepts have explored using TCAD. (Invited1)
A new high dynamic range CMOS x-ray detector is described. This sensor was designed specifically for imaging as opposed to the common approach of modifying a 3T optical design. allowed highly linear, wide operation that has otherwise been major drawback detectors. The design scalable from small tiles large wafer-scale imagers fabricated on 300mm wafers. performance such built using 9.4cm x tile reported. pixel size this 76 μm and it can be operated in native resolution or 2x2 binned mode....
We present an x-ray quanta image sensor (XQIS) utilizing temporal oversampling and CMOS technology. The output of the XQIS is a binary bit frame with each representing presence or absence detected photon. frames are read out at very high rate (>1000fps) series values combined to form pixel using digital integration. A system model analyzing design parameter presented component designs evaluated in simulation.
This paper presents the design and characterization of high conversion-gain pixels in a 180-nm CMOS image sensor process. By reducing overlapping capacitance between floating diffusion transfer gate, output-referred pixel conversion gain as 118uV/eand read noise low 1.8erms are experimentally achieved without significant lag. A dark current 38 pA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> is measured at 60°C. Comparison proposed...
We present the design of an x-ray quanta image sensor (XQIS) utilizing temporal oversampling and CMOS technology.