A5069793883- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- solar cell performance optimization
- Photovoltaic System Optimization Techniques
- Thermography and Photoacoustic Techniques
- Semiconductor materials and interfaces
- Ultrasonics and Acoustic Wave Propagation
- Acoustic Wave Resonator Technologies
- Laser Material Processing Techniques
- Luminescence and Fluorescent Materials
- Ion-surface interactions and analysis
- Spacecraft Design and Technology
- Polydiacetylene-based materials and applications
- Photovoltaic Systems and Sustainability
- Lanthanide and Transition Metal Complexes
Sanming University
2024
Hebei University of Engineering
2024
Colorado School of Mines
2007
Syracuse University
2007
Office of Scientific and Technical Information
2007
University of Oregon
2007
National Technical Information Service
2007
American Solar (United States)
1994
We present temperature-dependent measurements and modeling for a thickness series of hydrogenated amorphous silicon nip solar cells. The comparison indicates that the maximum power density (PMAX) from as-deposited cells has achieved hole-mobility limit established by valence bandtail trapping, PMAX is thus not significantly limited intrinsic-layer dangling bonds or doped layers interfaces. Measurements properties light-soaked show converge below 250 K; model perturbing band tail traps with...
The authors have developed an amorphous silicon alloy-based solar cell with a novel structure. Computer simulation studies show that for given short-circuit current, it is possible to obtain higher open-circuit voltage and fill factor than in conventional design. For nominal 1.5 eV a-SiGe alloy, the under red illumination can be improved from 0.55 0.64 same current. Experimental structures confirm theoretical prediction. design shows considerable improvement efficiency. Dynamic internal...
We have measured the attenuation of longitudinal acoustic waves in a series amorphous and nanocrystalline silicon films using picosecond ultrasonics. The were grown modified very high frequency glow discharge method on steel substrates. deposition conditions similar to that used fabrication high-efficiency solar cells. film thicknesses varied so we could distinguish between interface losses intrinsic within films. determine Si be 780 \ifmmode\pm\else\textpm\fi{} 160 cm${}^{\ensuremath{-}1}$...
We present grazing-incidence measurements of polarized electroabsorption spectra in p–i–n solar cells based on hydrogenated amorphous silicon (a-Si:H). find a significantly stronger polarization dependence the compared with earlier work detected using coplanar electrodes a-Si:H thin films. do not any significant upon light soaking, although this effect was found previous electrodes.
Amorphous silicon (a-Si) alloy solar cells are attractive for space applications several reasons, including potential very low mass. Ultralight a-Si modules have been fabricated and modifications to achieve dramatic increases in specific power (W/kg) identified. For on stainless steel Kapton, powers of 384 W/kg 1256 achieved. 0.5 mil Kapton with thinner bus bars, an extremely high > 2000 is possible a module 10% AM0 efficiency.