A modified version of the atomic force microscope is introduced that enables a precise measurement between tip and sample over tip-sample distance range 30–150 Å. As an application, signal used to maintain spacing constant, so profiling can be achieved with spatial resolution 50 second scheme allows simultaneous surface profile; this has been obtain material-dependent information from surfaces electronic materials.

A new high-resolution profilometer has been demonstrated based upon a noncontacting near-field thermal probe. The probe consists of thermocouple sensor with dimensions approaching 100 nm. Profiling is achieved by scanning the heated above but close to surface solid. conduction heat between tip and sample via air provides means for maintaining spacing constant during lateral scan. large difference in properties solids makes profiling technique essentially independent material Noncontact...

▪ Abstract The scanning capacitance microscope (SCM) provides a direct method for mapping the dopant distribution in semiconductor device on 10 nm scale. This capability is critical development, optimization, and understanding of future ULSI processes devices. basic elements SCM its application to nanometer scale metal oxide (MOS) capacitor measurements are described. Experimental methods reviewed. Basic show that capacitance-voltage relations understood. High-quality probe tips surfaces...

A near-field capacitance microscope has been demonstrated on a 25 nm scale. resonant circuit provides the means for sensing variations between sub-100-nm tip and surface with sensitivity of 1×10−19 F in 1 kHz bandwidth. Feedback control is used to scan at constant gap across sample, providing noncontact profiling. Images conducting nonconducting structures are presented.

Measurement of dopant density in silicon with lateral resolution on the 200 nm scale has been demonstrated a near-field capacitance technique. The technique is based upon measurement local between 100 tip and semiconducting surface. Lateral imaging achieved by voltage-dependent sample due to depletion carriers semiconductor, as scanned laterally over Measurements have range 1015–1020 cm−3. Capacitance-voltage measurements made submicrometer scale.

Several advances have been made toward the achievement of quantitative two-dimensional dopant and carrier profiling. To improve dielectric charge properties oxide–silicon interface, a method low temperature heat treatment has developed which produces an insulating layer with consistent quality reproducibility. After standard polishing procedure is applied to cross-sectional samples, samples are heated 300 °C for 30 min under ultraviolet illumination. This additional surface dramatically...

Scanning probe technology, with its inherent two-dimensionality, offers unique capabilities for the measurement of electrical properties on a nanoscale. We have developed setup which uses scanning capacitance microscopy (SCM) to obtain information cross-sectioned samples while simultaneously acquiring conventional topographical atomic force (AFM) data. In an extension our work very large scale integration cross sections, we now obtained one-dimensional and two-dimensional SCM data sections...

A new optical technique is described for measurement of absolute distance. The approach based upon a wavelength multiplexed heterodyne interferometer with FM demodulation. By temporally multiplexing discrete wavelengths in interferometer, complete elimination interferometric range ambiguity can be achieved while maintaining the high sensitivity and resolution interferometry. basic theory presented an algorithm over meter distances submicrometer resolution. experimental implementation ranging...

Quantification of dopant profiles in two dimensions (2D) for p-n junctions has proven to be a challenging problem. The scanning capacitance microscope (SCM) capability junction imaging only been qualitatively demonstrated. No well-established physical model exists yet the SCM data interpretation near junction. In this work, experimental technique and conversion algorithm developed nonjunction samples are applied quantification. To understand response active region, an electrical is proposed....

A submicrometer photodiode probe with a sub-50 nanometer tip radius has been developed for optical surface characterization on scale. The nanoprobe is built to detect subwavelength intensity variations in the near field of an illuminated surface. consists Al–Si Schottky diode constructed end micromachined pyramidal silicon tip. process batch fabrication nanoprobes described. Electrical and measurements are presented. optically sensitive area 150 fW sensitivity.

Frequently electrical characterization techniques [such as the spreading resistance probe (SRP)], rely on availability of a set well-calibrated, homogeneously doped Si samples to establish calibration curves (and parameters) necessary for conversion measurements into carrier profiles. Although ideally such should be verified daily, in practice, time considerations limit daily verification one (or few) samples. To remedy this situation special multilayer structure has been grown consisting...

We present data which show that the magnetic force microscope is capable of detecting component field parallel to surface a sample under study. Images bits in Co-alloy thin-film disk and laser-written TbFe film were taken with magnetized tip tilted at 45° respect normal. In both cases asymmetric part image domain interpreted terms gradients in-plane field. The written decorated small particles, allowing identification boundaries due magnetization.

Quantitative dopant profile measurements are performed on a nanometer scale by scanning capacitance microscopy (SCM). An atomic force microscope is used to position tip at semiconductor surface, and local change measured as function of sample bias. A new feedback method has been demonstrated in which the magnitude ac bias voltage applied adjusted maintain constant scanned across surface. quasi-1D model extract density profiles from SCM measurements. The inverted compared with obtained...

Presently, a nanometer scale capacitance–voltage (C–V) method for the quantitative measurement of lateral dopant distribution near semiconductor surface is being established. An atomic force microscope used to position tip at surface, and local C–V measurements are performed. Experimental curves have been performed with tips sub-50 nm radius on series silicon wafers known density. It shown that repeatable can be tips, capacitance change from accumulation depletion varies monotonically The...

The atomic ordering of GaInP has been established and studied by a variety methods, including transmission electron microscopy, cathodoluminescence, photoluminescence. In this work, Kelvin probe force microscope (KPFM) employed to image several samples previously characterized these techniques. results our study clearly show that the KPFM is capable distinguishing between ordered disordered regions in GaInP, contrast strongly depends on amplitude applied ac bias voltage KPFM. measurements...

Migration of surface ions in lateral fields on insulator surfaces may modify the electrical characteristics underlying semiconductor structures causing device instabilities. A high sensitivity electrostatic force microscope is used to image movement and spatial distribution Si3N4. Mobile are distributed by fringing a p-n junction an open-gate field-effect transistor. The charge topography imaged simultaneously micrometer scale.

Noise stemming from mechanical vibration, electronic noise, or low frequency (1/f power spectrum) inherent in the tunneling process, often limits resolution, speed, range of application scanning microscopy (STM). We demonstrate a technique for minimizing effect these noise sources on STM image. In our method, tip is vibrated parallel to sample surface at f0, above that feedback response frequency. Two signals are obtained simultaneously: conventional topography, and differential image...

Sub-10 nm resolution can be obtained in scanning capacitance microscopy (SCM) if the probe tip is approximately of same size. Such observed, although infrequently, with present commercially available probes. To acquire routine sub-10 resolution, a solid Pt metal has been developed radius. The demonstrated by SCM imaging on cross-sectioned 70 gatelength field-effect transistor (FET), shallow implant (n+/p, 24 junction depth), and an epitaxial staircase (p, ∼75 steps). FET device over abrupt...

The scanning capacitance microscope (SCM) has been shown to be useful for quantitative 2D dopant profiling near the surface of silicon. An atomic force is used position a nanometer scale tip at silicon surface, and local change measured as function sample bias. A new feedback method recently demonstrated in which magnitude ac bias voltage applied adjusted maintain constant scanned across surface. then input into an inversion algorithm extract density profile. approach allows use quasi-1D...

The scanning capacitance microscope (SCM) is capable of quantitative two-dimensional carrier and dopant density mapping with nanometer scale spatial resolution. method can be applied to either the top or cross-sectional surface a silicon sample. inversion SCM data achieved using quasi-one-dimensional model. Cross-sectional measurements have been performed on samples that abrupt steps. in these systematically varies from 1017 1020 cm−3. provide means directly compare results vertical...

Absolute optical ranging has been demonstrated by wavelength-multiplexed interferometry with a range resolution of 200 nm, well below the single-wavelength ambiguity. Two current- and temperature-tunable GaAlAs laser diodes (850 nm) provide an equivalent wavelength 100 μm less than nm. The achievement such provides means for combining single- multiple-wavelength interferometric measurements to achieve unambiguous distance measurement nanometer resolution. system is also used profile...

Measurement of dopant density in silicon with lateral resolution on the 100 nm scale has been demonstrated a ‘‘near field’’ capacitance microscope. The technique is based upon measurement local between tip and sample surface as scanned over surface. capacitive microscope used to image capable measuring variations 3×10−22 F/(Hz)1/2, previously 25 metallic surfaces. Dopant imaging achieved by scanning under feedback control close surface, variations. Several types measurements have made...