A5101403886- Perovskite Materials and Applications
- Luminescence Properties of Advanced Materials
- Silicon Nanostructures and Photoluminescence
- Luminescence and Fluorescent Materials
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Radiation Detection and Scintillator Technologies
- Carbon and Quantum Dots Applications
- Quantum Dots Synthesis And Properties
- Nanowire Synthesis and Applications
- 2D Materials and Applications
- Glass properties and applications
- Solid State Laser Technologies
- Solid-state spectroscopy and crystallography
- Ga2O3 and related materials
- Optical properties and cooling technologies in crystalline materials
- Gas Sensing Nanomaterials and Sensors
- Nanocluster Synthesis and Applications
- Strong Light-Matter Interactions
- Graphene research and applications
- Random lasers and scattering media
- Advanced Condensed Matter Physics
- Advanced Photonic Communication Systems
- Organic and Molecular Conductors Research
- Thermal Expansion and Ionic Conductivity
Hanshan Normal University
2016-2025
Anshan Normal University
2015-2024
South China Normal University
2021-2023
Chaozhou Central Hospital
2021
Central China Normal University
2014-2016
A broadband NIR luminescence material BaZrGe<sub>3</sub>O<sub>9</sub>:Cr<sup>3+</sup> was designed, the crystal field parameters and Huang–Rhys factor were calculated to evaluate luminescence. The potential application for pc-LED demonstrated.
Materials exhibiting persistent luminescence (PersL) have great prospect in optoelectronic and biomedical applications such as optical information storage, bio-imaging, so on. Unfortunately, PersL materials with multimode emission properties been rarely reported, although they are expected to be very desirable multilevel anti-counterfeiting encryption applications. Herein, Cr3+ -doped zinc aluminum germanium (ZAG:Cr) nanoparticles triple-mode emissions designed demonstrated. Upon exposure...
Tin-based halide perovskites represent a highly promising and eco-friendly alternative to lead-based materials with significant potential for optoelectronic applications. However, their advancement is hampered by challenges such as poor film crystallinity unintended self-doping. Herein, this work reports the fabrication of high-quality CsSnBr
Mn 2+ doping is beneficial for boosting the emission of self-trapped excitons in Cs 4 SnBr 6 . The -doped exhibits an enhanced photoluminescence quantum yield up to ∼75%, a broadened spectrum, and improved thermal stability.
Zero-dimensional (0D) tin halide perovskites feature extraordinary properties, such as broadband emission, high photoluminescence quantum yield, and self-absorption-free characteristics. The innovation of synthesis approaches for high-quality 0D has facilitated the flourishing development perovskite-based optoelectronic devices in recent years. However, discovering an effective strategy to further enhance their emission efficiency remains a considerable challenge. Herein, we report unique...
The transfer-free synthesis of high-quality, large-area graphene on a given dielectric substrate, which is highly desirable for device applications, remains significant challenge. In this paper, we report simple rapid thermal treatment method the fast and direct growth large-scale monolayer SiO2/Si substrate from solid carbon sources. stack structure layer/copper film/SiO2 adopted in RTT process. inserted copper film does not only act as an active catalyst precursor but also serves "filter"...
Abstract Although all‐inorganic perovskite quantum dots (QDs) have outstanding optoelectronic properties, they tend to poor stability in air and water, at high temperatures, under light irradiation. Herein, a glow discharge plasma process incorporating real‐time situ diagnosis is designed for efficient encapsulation improve the of CsPbBr 3 QD films. An ammonia/silane which has less destructive effects on QDs used plasma‐enhanced chemical vapor deposition produce a‐SiN x :H QDs. The...
We present an effective method to suppress the hole overflow in Si quantum dots-based silicon nitride (SiN) light-emitting diodes (LEDs) by employing nanocrystalline (nc-Si) layer as blocking inserted between SiN luminescent active and p-Si anode. The proposed devices exhibit strong white light emission under forward bias conditions. In comparison LEDs without nc-Si interlayer, a significant enhancement of more than 200% efficiency is achieved from devices. increment EL found strongly depend...
Luminescent SiCxOy:H films, which are fabricated at different CH4 flow rates using the plasma-enhanced chemical vapor deposition (PECVD) technique, exhibit strong photoluminescence (PL) with tuning from near-infrared to orange regions. The PL features an excitation-wavelength-independent recombination dynamics. silicon dangling bond (DB) defects identified by electron paramagnetic resonance spectra found play a key role in behavior. first-principles calculation shows that Si DB introduce...
Ce3+/Cr3+ co-doped LaAlO3 for near-infrared (NIR) long lasting phosphors were synthesized through solid-state reaction. Incorporation of Ce3+ ions into Cr3+-doped significantly enhanced the NIR persistent luminescence by more than one order magnitude compared with doped Cr3+. Detailed analysis photoluminescence, photoluminescence excitation, and Thermo-luminescence spectra, as well decay behavior LaAlO3, indicated that improvement at around 735 nm (Cr3+: 2E→4A2 transition) is not only...