The design and implementation of a class-J mode RF power amplifier is described. experimental results indicate the mode's potential in achieving high efficiency across extensive bandwidth, while maintaining predistortable levels linearity. A commercially available 10 W GaN (gallium nitride) electron mobility transistor device was used this investigation, together with combination waveform measurements, active harmonic load-pull theoretical analysis mode. Targeting working bandwidth 1.5-2.5...

A novel formulation for the voltage waveforms in high efficiency linear power amplifiers is described. This demonstrates that a constant optimum and output can be obtained over continuum of solutions by utilizing appropriate harmonic reactive impedance terminations. specific example confirmed experimentally. new has some important implications possibility realizing broadband >10% RF amplifiers.

The usual approximate expression for measured f/sub T/=(g/sub m//2 pi (C/sub gs/+C/sub gd/)) is inadequate. At low drain voltages just beyond the knee of DC I-V curves, where intrinsic t/ a maximum millimeter-wave MODFETs, high values C/sub gd/ and G/sub ds/ combine with g/sub m/ to make terms involving source resistance significant. It shown that these resistances can degrade T/ 0.30- mu m GaAs-AlGaAs MODFET from an value 73 GHz 59 GHz. correct extraction essential determining electron...

The paper presents the power amplifier design. introduction of a practical harmonic balance capability at device measurement stage brings number advantages and challenges. Breaking down this traditional barrier means that test-bench engineer needs to become more aware design process requirements. inverse is also true, as specifications for harmonically tuned are bit complex than just load-pull contours. We hope new level integration between both will result in better exchanges sides go...

The extended continuous class-F mode RF power amplifier (PA) is presented for the first time. introduction and experimental validation of this novel PA demonstrates a new design space over wide band frequencies. This paper will show that high output drain efficiency, equivalent to mode, can be maintained by varying reactive components fundamental second harmonic impedances in accordance with formulation voltage waveform. Additionally it shown that, both phase magnitude impedances, yet wider...

In this paper, an extended version of the continuous class- <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">F</i> <sup xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> mode power amplifier (PA) design approach is presented. A new formulation describing current waveform in terms just two additional parameters, while maintaining a constant half-wave rectified sinusoidal voltage waveform, allows multiple solutions fundamental and second-harmonic...

Utilizing small-signal direct modulation and relative intensity noise measurements, the authors investigate changes in response, differential gain delta g/ n, nonlinear coefficient , damping factor K, which result from three structural modifications to GaAs-based multiple quantum well lasers: addition of strain wells; increase number p-doping wells. These are assessed terms their potential for reducing drive current required achieve a given bandwidth, increasing maximum intrinsic bandwidth...

RF I-V waveform measurement and engineering systems are now finally enabling practical to be directly undertaken with capable of supporting continuous wave stimulus reaching a high level maturity. On-going research development activities presently addressing the multitone requirement. The availability capability extends characterization opportunities for both high-frequency/speed transistor technology developers circuit/system designers; terminal waveforms unifying theoretical link between...

This paper presents a comprehensive study on the effective utilization of large-signal measurement data in nonlinear computer-aided design (CAD) process. To achieve this goal two distinctive, yet mutually complementary, approaches have been integrated. Measured was, first instance, directly integrated into CAD simulator, and second utilized for direct extraction behavioral model parameters. The formulation developed is based polyharmonic distortion approach. combination both subsequent...

This paper presents, for the first time theoretical introduction and experimental validation of Continuous Class-F Mode Power Amplifier that provides a new design space high efficiency broadband power amplifiers. Starting from standard class-F mode, this work shows it is possible to maintain constant or even improved output coupled variations fundamental second harmonic impedances. The investigation was carried out on GaAs pHEMT devices demonstrates near between 82% 87% can be achieved along...

A novel graphical power amplifier (PA) design tool, the "clipping contour," is introduced and described. Using now well-publicized continuous Class-B/J voltage waveform formulation as a starting point, process derived that allows contours to be constructed on Smith chart define "zero-grazing" fundamental harmonic impedance conditions. Theoretical equations are defined solved whereby can drawn in real time computer-added environment. key result from this theory definition of 2-D space opens...

Comparison between pulsed and CW large signal RF performance of field-plated <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> MOSFETs has been reported. Reduced self-heating when pulse resulted in a power added efficiency 12%, drain 22.4%, output density 0.13...

A measurement system combining vector corrected waveform measurements with active harmonic load-pull extends, for the first time, real-time experimental engineering up to 30-W power level. The correction procedure is presented in this paper. novel approach based on capability of demonstrated a 4-W LDMOS device. 20% increase maximum output 4.7 W without degrading gain and efficiency realized. Waveform analysis at various drive load conditions directly identifies nonlinear capacitance effects...

S-parameters of MODFETs were measured versus bias instead frequency with a special feature the HP8510 network analyzer. Figure merit plots, f/sub T/, and max/, quickly generated from sweeps S-parameters, optimum points easily found. The intrinsic device elements calculated after de-embedding measurements parasitics. technique is demonstrated 0.15- mu m pseudomorphic MODFET an T/ 150 GHz. usefulness for understanding operation discussed. With this scan element value can be plotted in 13 s.<...

A physical, yet simple, small-signal equivalent circuit for the heterojunction bipolar transistor (HBT) is proposed. This was established by analyzing in detail physical operation of HBT. The model verification carried out comparison measured and simulated S- Z-parameters both passive (reverse-biased) active bias conditions. feature this that it uses a direct extraction method to determine parasitic elements, particular, capacitances. excellent agreement between parameters verified all over...

A measurement system combining vector corrected waveform measurements with active harmonic load-pull extends, for the first time, real-time experimental engineering up to 30 W power level. This novel approach is demonstrated on a 4 LDMOS device. 20% increase in maximum output 4.7 without degrading gain and efficiency was realized.

This paper describes how dc-radio-frequency (RF) dispersion manifests itself in AlGaN/GaN heterojunction field-effect transistors when the devices are driven into different RF load impedances. The localized nature of <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i> - xmlns:xlink="http://www.w3.org/1999/xlink">V</i> plane, which is confined to ldquokneerdquo region, observed both waveform and pulsed measurements. effect fully reproduced using...

A model is presented that clarifies the role of inefficient charge modulation in limiting current-gain cutoff frequency (f/sub T/) conventional GaAs/AlGaAs and pseudomorphic InGaAs/AlGaAs MODFETs. Both parasitic electron-supplying layer departure from saturated velocity mode operation are seen to reduce efficiency with which gate controls drain current. Consequently, f/sub T/ apparent electron reduced by a factor called modulating efficiency. Using this model, superior performance MODFET...

A novel, highly efficient and broadband RF power amplifier (PA) operating in "continuous class-F" mode has been realized for first time. The introduction experimental verification of this new PA demonstrates that it is possible to maintain expected output performance, both terms efficiency power, over a very wide bandwidth. Using recently established continuous class-F theory, an matching network was designed terminate the three harmonic impedances. This resulted delivering average drain 74%...

Summary form only given, as follows. A novel, highly efficient and broadband power amplifier operating in continuous class-F mode has been realized. The introduction experimental verification of this new PA demonstrates that it is possible to maintain expected output performance, both terms efficiency power, over a very wide bandwidth. Using recently established theory, delivering an average 74% 10.5W for octave bandwidth

Results from a fully implemented class-J RFPA (RF power amplifier) are presented for the first time, which demonstrate this mode's high efficiency potential across substantial bandwidth. Using commercially available 10W GaN (gallium nitride) HEMT device, and waveform measurement active load-pull capability at Cardiff University, operation has demonstrated drain efficiencies between 60-70% 1.35-2.25 GHz (50%) bandwidth whilst delivering 10 Watts of 2dB compression point. Realisation design...

GaAs-AlGaAs and strained layer In/sub 0.3/Ga/sub 0.7/As-GaAs-AlGaAs GRINSCH SQW lasers grown by molecular beam epitaxy are discussed. The strained-layers have threshold currents of 12 mA for 30- mu m*400- m devices (1000 A/cm/sup 2/) current densities 167 2/ 150- m*800- devices. strained-layer InGaAs lower than those GaAs all dimensions tested with 20- m-wide exhibiting three times 0.7/As Microwave modulation 10- m*500- simple mesa structures yields bandwidths 6 GHz. For tested, greater...

The authors report the influence of kink effect on DC and microwave performance i-InAlAs heterojunction doped-channel MESFETs lattice matched to an InP substrate with submicrometer gates. Kink effects were observed at room temperature as well 77 K in measurement. kinks seem be related deep-level electron trapping, are not present frequencies. Measured results presented showing that existence low operating frequencies does degrade devices.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML"...

The quantitative performance of a "single half-wavelength" acoustic resonator operated at frequencies around 3 MHz as continuous flow microparticle filter has been investigated. Standing wave radiation pressure on suspended particles (5-microm latex) drives them towards the center half-wavelength separation channel. Clarified suspending phase from region closest to wall is drawn away through downstream outlet. filtration efficiency device was established turbidity measurements frequency...