The Hall effect and the magnetoresistance of ${(\mathrm{TMTSF})}_{2}$Cl${\mathrm{O}}_{4}$ have been measured at temperatures from 0.08 to 10 K in magnetic fields 22 T. low-temperature data suggest a series transitions induced by an orbital field which progressively reduce carrier density. Oscillations, apparently Shubnikov-de Haas, also are observed above T up K.

Throughout the past four decades, semiconductor technology has advanced at exponential rates in both productivity and performance. In recent years, multilevel interconnect networks have become primary limit on productivity, performance, energy dissipation, signal integrity of gigascale integration. Consequently, a broad spectrum novel solutions to multifaceted problem must be explored. Here we review salient results this exploration. Based upon prediction complete stochastic length...

Using two complementary techniques, we have for the first time determined full evolution of superfluid turbulence in a single circular tube. Our analysis shows that from laminar flow through turbulent states T I and II is independent tube size probably generic feature geometry. This important result finally allows reliable comparison to be made data wide narrow experiments. The parameters are found well defined by these experiments, theory Schwarz suggests fully developed state reasonably...

We report on experimental evidence of directed electron transport, induced by external linear-polarized microwave irradiation, in a two-dimensional spatially-periodic asymmetrical system called ratchet. The broken spatial symmetry was introduced high mobility gas based AlGaAs/GaAs heterojunction, patterning an array artificial semi-discs-shaped antidots. show that the direction transport is efficiently changed polarization. dependence effect magnetic field and temperature investigated. This...

Sea of Leads (SoL) is an ultrahigh density (>10/sup 4//cm/sup 2/) compliant chip input/output (I/O) interconnection technology. SoL fabricated at the wafer level to extend economic benefits semiconductor front-end and back-end wafer-level batch fabrication include I/O interconnections, packaging, testing burn-in. This paper discusses fabrication, mechanical electrical performance, SoL. can lead enhancements in reliability, manufacturing throughput, cost. A with 12 /spl times/ 10/sup...

We report the effects of a transverse magnetic field (J⊥B) on conductivity quantum well tunneling structures based AlGaAs/GaAs/AlGaAs wells. The current-voltage characteristics in positive differential resistance regime show negative magnetoconductance for all values B. peak bias voltage increases monotonically with increasing For B<6 T there is decrease current, but then it B>6 T. data also dramatic induced changes (NDR) features. behavior NDR from sharp hysteretic...

We have investigated the behavior of carbon resistor and capacitive thermometers from 4.2 to below 0.1 K 19 T. observe, in agreement with previous work at higher temperatures, a nonmonotonic magnetoresistance standard for thermometry 1.0 K. provide reader an expression which may be used, proper precalibration particular sensor, determine temperature reading resistance magnetic field. In addition, we discuss epoxy mixing chambers dilution refrigerators results indicate that certain materials...

Sea of leads (SoL) is a novel ultra high-density compliant wafer-level packaging technology. SoL extends batch processing multilayer on-chip interconnect networks to include x-y-z chip input/output (I/O) interconnects with density exceeding 10/sup 4/ per cm/sup 2/. A package 12/spl times/10/sup 3/ distributed across 2/ has been demonstrated. The compliance enables testing as well eliminates the need for underfill between chips and substrates CTE (coefficient thermal expansion) mismatch...

Three-dimensional microstructures find applications in diffractive optical elements, photonic etc., and can be efficiently fabricated by e-beam lithography. Good process control efficient proximity effect correction are important for achieving the desired structures. With polymethylmethacrylate as resist, a optimization of different develop conditions is carried out to identify that most conductive gray scale features. A novel scheme called effective dose-depth (EDD) method proposed. Using...

We report magnetotransport measurements, down to 0.050 K and up 20 T, in two-dimensional systems with dilute dense electron densities. The emphasis is on the latter regime, where Hall resistance shows quantization for level filling factors at $\ensuremath{\nu}=\frac{4}{3} \mathrm{and} \frac{5}{3}$, magnetoresistance presents well-defined structures $\ensuremath{\nu}=\frac{7}{3} \frac{8}{3}$. These results indicate that fractional quantum effect a general phenomenon not restricted...

Barely insulating and barely metallic Si:As samples have been studied in the temperature range 4.2 K to 50 mK. Metallic show a new high-field magnetoresistance behavior explainable terms of magnetic tuning critical density ${N}_{c}$. Insulating at fixed fields Mott variable-range-hopping increase characteristic ${T}_{0}(N,H)$ with $H$ results primarily from localization-length exponent $\ensuremath{\nu}$. Magnetocapacitance depend on field-induced changes both ${N}_{c}$

In recent years interconnecting devices have become primary limits on the performance, energy dissipation, signal integrity, and productivity of gigascale integration (GSI). Opportunities to address interconnect problem include new materials processes, reverse scaling, novel microarchitectures, three-dimensional integration, input/output enhancements, RF wireless interconnects microphotonics.

The effect of a parasitic parallel conducting layer on the measurement longitudinal and transverse magnetoresistances high mobility two-dimensional (2D) electron gas in modulation-doped heterostructures is considered. A circuital analysis which takes into account circulating currents at Hall contacts presented, previous descriptions this situation are shown to be inapplicable. resultant equations correctly predict behavior both low magnetic fields, correlate well with measured values. They...

Low energy electron-enhanced etching of Si(100) has been achieved by placing the sample on anode a dc discharge in hydrogen/helium mixtures. Over broad range gas composition, pressure, and current, nonpatterned samples gave etch yields 0.01–0.02 atoms/electron, average rates 2000–3000 Å/min. Postetch examination atomic force microscopy revealed surface roughness 2–3 nm. These results are related to incident flux H atoms electrons through simple model sheath layer above sample.

An electrical-optical chip input-output (I/O) interconnection technology called sea of polymer pillars (SoPP) is presented. SoPP provides highly process-integrated and mechanically flexible (compliant) die-to-board interconnections that mitigate thermo-mechanical expansion mismatches. The I/O density exceeds 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> /cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . compliance the shown to...

Using the stable, dc current-voltage (I-V) curve measured from a double-barrier resonant tunneling structure, we have studied effects of external circuit elements on device oscillations. A simulation, using experimental I-V and simple model for biasing arrangement, showed that hysteresis vertical jumps appear in when oscillates. This observation is supported by results obtained same with intentionally added to configuration.

An ac-dc single-stage driver for high-brightness light-emitting diodes (HB-LEDs) with galvanic isolation is presented in this paper. The based on a dual inductor current-fed push-pull converter each operating boundary conduction mode (BCM). interleaving between the two inductors enables to reduce high input current ripple inherent BCM. Moreover, it fully compliant IEC 1000-3-2 Class C and able achieve power factor (PF). Its low component count, simplicity, overall outstanding characteristics...

We have demonstrated low energy electron‐enhanced etching (LE4) of 1.0 μm thick films GaN on (100) Si substrates with good anisotropy. The etch rate increased from 70 to 525 Å/min as the sample temperature 50 250°C. Auger spectra indicated that surface stoichiometry was essentially unchanged during LE4 at process temperatures below 100°C; samples etched higher showed excess gallium surface.

Low energy electron-enhanced etching of GaAs(100) has been achieved by placing the sample on anode a low-pressure hydrogen/chlorine dc discharge. Samples etched at room temperature reveal good anisotropy (≳20), selectivity (≳200 against SiO2 masks temperature), and smooth surfaces etch rates 250 Å/min; up to 4.5 μm/min were 150 °C. The dependence characteristics gas composition, pressure, is described.

The bibliography has been compiled as an introduction and study guide to this field. papers listed describe the extensive theoretical experimental results that have obtained on quantum interference effects discuss possible application areas. Works of a fundamental nature concerning phenomena are basic all semiconductor behavior not included. Articles properties band structure semiconductors, which essential complete understanding effects, Conference papers, though frequently very important,...

We have studied the current-voltage (I-V) characteristics of a double-barrier, lattice-matched ${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{In}}_{\mathit{x}}$As/${\mathrm{Al}}_{1\mathrm{\ensuremath{-}}\mathit{y}}$${\mathrm{In}}_{\mathit{y}}$As tunneling structure in transverse magnetic field, B, perpendicular to current (B\ensuremath{\perp}J), fields up 18 T at temperatures 4.2 K. The devices used this work showed stable dc I-V curves for all bias voltages and field values....

The authors show that Sea of leads (SoL) is a disruptive paradigm for system-on-a-chip (SoC) because it intends to use wafer-level batch fabrication ultra high density (>10/sup 4//cm/sup 2/) x-y-z compliant input/output and packages as well wafer level DC/AC testing burn-in enhance performance, cost, size, weight, reliability mixed signal SoC.

This paper proposes a very simple analog control for quasi-square-wave zero voltage switching (QSW-ZVS) and triangular current mode bidirectional converters. The proposed circuit controls the inductance current, thanks to use of variable-width hysteretic control. upper lower bounds band are clamped ensure QSW-ZVS operation with single command independently from power flow direction. enables achieve seamless transition between source sink modes. advantages disadvantages analyzed two different...

At 0.5≤T≤4.2 K and for fields of order 10 kOe, a large positive magnetoresistance is observed in Cd0.95Mn0.05Se Cd0.99Mn0.01Se samples which are near the Mott transition. The effect attributed to an increase screening radius, caused by splitting conduction band. higher fields, but below ∼80 with 5% Mn show negative decrease separation between Fermi level mobility edge.

The use of DC distribution networks has several advantages, especially for energy saving and integration storage system renewable energies. In this regard, nano-grids are a very interesting solution when distributing electrical power in households. paper, an analysis about the possible bidirectional capability nano-grid is presented. end-user can freely connect either passive load (demanding power) or active one (able to sink current grid). divided into three different parts. First,...