A5056676944- Advanced Thermoelectric Materials and Devices
- Thermal properties of materials
- Heusler alloys: electronic and magnetic properties
- Chalcogenide Semiconductor Thin Films
- Thermal Expansion and Ionic Conductivity
- Thermal Radiation and Cooling Technologies
- Magnetic and transport properties of perovskites and related materials
- Rare-earth and actinide compounds
- Intermetallics and Advanced Alloy Properties
- Perovskite Materials and Applications
- Advanced Sensor and Energy Harvesting Materials
National Institute for Materials Science
2025
International Advanced Research Centre for Powder Metallurgy and New Materials
2018-2023
Indian Institute of Technology Madras
2021-2023
Due to natural abundance, low cost, and compatibility with sustainable green technology, Mg3Sb2-based Zintl compounds are comprehensively explored as potential thermoelectric materials for near-room temperature applications. The effective use of these in devices requires both p n-type Mg3Sb2 having comparable efficiency. However, p-type has inferior efficiency compared its counterpart due electrical conductivity (∼103Sm-1). Here, we show that codoping monovalent atoms (Li-Ag, Na-Ag) at the...
A compressive strength limit is one of critical parameters for thermoelectric materials. In this study, we synthesized a single crystal Yb-filled Co–Sb based skutterudite. We assessed the pressure dependence internal strain using high-resolution synchrotron radiation X-rays at SPring-8. The prepared was identified as Yb0.148Co4Sb12.54, with lattice parameter 9.0504 Å. Compressive testing performed until sample fractured, revealing 591.3 MPa. stress–strain curve exhibited nearly constant...
The thermoelectric properties of nanostructured Ni doped Dy filled CoSb<sub>3</sub>skutterudites (Dy<sub>0.4</sub>Co<sub>4−x</sub>Ni<sub>x</sub>Sb<sub>12</sub>(<italic>x</italic>= 0, 0.4, and 0.8)) have been reported.
The effect of doping on the thermoelectric properties Half-Heusler (HH) high-entropy alloy (HEA) Ti2NiCoSnSb was studied. Lower thermal conductivity observed with increased Sb doping. Mass scattering by heavy (Ta, Zr) and light (Al) dopants studied to further lower conductivity. Dopants at level up 50% Ti site were A high HH phase content obtained in Zr-doped samples, a low-lattice 1.9 W/(m·K) observed. This value is one lowest reported lattice conductivities alloys. poor solubility Ta led...
The advantage of secondary-phase induced carrier filtering on the thermoelectric properties has paved way for developing cost-effective, highly efficient materials. Here, we report a very high figure-of-merit skutterudite nanocomposites achieved by tailoring interface filtering. single-filled are prepared dispersing rare-earth oxides nanoparticles (Yb2O3, Sm2O3, La2O3) in (Dy0.4Co3.2Ni0.8Sb12) matrix. nanoparticles/skutterudite interfaces act as filters, thereby significantly enhancing...
Flexible thermoelectric (TE) devices hold unique promise for future wearable electronics. However, the development of flexible thermoelectrics electronics is still a challenge owing to their low power conversion efficiency and degradation due repeated bending on human body curvature. Herein, we have developed TE films using inorganic Ag2Se Ag2Se–CuAgSe nylon through chemical route followed by cold pressing see effect processing flexibility properties Ag2Se/nylon Ag2Se–CuAgSe/nylon films. The...
We report the evolution of thermoelectric and mechanical properties n-type SnSe obtained by iodine doping at Se site.
We report a systematic investigation of the microstructure and thermoelectric properties refractory element-filled nanostructured Co4Sb12 skutterudites. The tantalum (Ta) metal-filled samples (TaxCo4Sb12 (x = 0, 0.4, 0.6, 0.8)) are synthesized using solid-state synthesis route. All composed single skutterudite phase. Meanwhile, nanometer-sized equiaxed grains present in Ta0.2Co4Sb12 Ta0.4Co4Sb12 samples, bimodal distributions elongated observed Ta0.6Co4Sb12 Ta0.8Co4Sb12 samples. dominant...