A5015733981- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Ion-surface interactions and analysis
- Silicon Nanostructures and Photoluminescence
- Thin-Film Transistor Technologies
- Chalcogenide Semiconductor Thin Films
- ZnO doping and properties
- Graphene research and applications
- Advanced Materials Characterization Techniques
- Gas Sensing Nanomaterials and Sensors
- Metallic Glasses and Amorphous Alloys
- Magnetic properties of thin films
- Quantum Dots Synthesis And Properties
- Magnetic Properties and Synthesis of Ferrites
- Copper Interconnects and Reliability
- Electromagnetic wave absorption materials
- Electron and X-Ray Spectroscopy Techniques
- Advancements in Battery Materials
- Advanced Thermoelectric Materials and Devices
- Transition Metal Oxide Nanomaterials
- Metal and Thin Film Mechanics
- High voltage insulation and dielectric phenomena
- Diamond and Carbon-based Materials Research
- Carbon Nanotubes in Composites
Belarusian State University
2015-2024
Al-Balqa Applied University
2005
Lomonosov Moscow State University
2003
Institute of Solid State Physics
1976
In this work, the temperature and frequency dependences of real part admittance [σ(f, T)] annealed nanocomposite films containing Co45 Fe45Zr10-based nanoparticles covered with native oxides embedded in a doped PbZrTiO3 ferroelectric matrix were studied. The nanocomposites studied deposited by ion sputtering complex target mixed Ar/O2 atmosphere followed 15-min annealing process (with steps 25 K) air range 398 K ≤ T 573 K. σ(f, T) samples was measured 77 < p 373 at frequencies 50 Hz f 1 MHz....
We have studied the interconnection between structure (grain sizes, chemical and phase composition, porosity) some electric properties (resistivity, Hall Seebeck coefficients, as well power factor, concentration mobilities of carriers) in composite ceramics (ZnO)z[(TM)xOy]1-z (TM = Fe Co – transition metals, 0 ≤ x 3; 1 y 4, 0.5 z 10 wt%), prepared by one-step and/or two-step annealing on air powder mixtures ZnO TM oxides. The ceramic samples was X-ray diffraction (XRD), Mossbauer (MS) Raman...
This paper presents the investigations of electrical properties and eect annealing on conductivity (CoFeZr)x(CaF2)100-x nanocomposites produced by ion-beam sputtering in Ar O2 ambient.Investigations into depending measuring temperature have been performed.The application a combined argonoxygen beam brings about lowering potential barrier surface nanoparticles.In course additional oxidation occurs.First it proceeds then all through metallic-phase particles.
The study of carrier transport in granular nanocomposite films consisting ferromagnetic Fe45Co45Zr10 alloy nanoparticles embedded a low-conductive Pb81Sr4(Na5Bi5)15(Zr57.5Ti42.5)O3 matrix has been performed. Real part the impedance nanocomposites was studied as function composition, temperature and frequency, for samples with 25 ≤ x 80 at.%, deposited by ion-beam sputtering Ar + O2 gas mixture at oxygen pressures $P_{O_2 } $ = 2.4·10−3 3.7·10−3 Pa. It proved that approaching threshold...
This paper investigates the inductive contribution to AC conductance in granular nanocomposites (Fe0.45Co0.45Zr0.10)x(Al2O3)1-x.The initial studied were manufactured Ar+O2 atmosphere by ion-beam sputtering of target containing Fe0.45Co0.45Zr0.10 and alumina stripes then subjected annealing procedure air over temperature range 373 K < Ta 873 K.These samples, before after annealing, using 77 Tp 300 frequency 50 Hz f 1 MHz dependences a real part admittance σ(T, ).Analysis observed σ(f, T p )...
The paper established that, the hopping mechanism of charge exchange for (FeCoZr)64.4(PZT)35.6 nanocomposite and additional polarization tested sample occurs. As frequency increases two areas where capacitance decreases can be observed. Correlation between conductivity increase decrease has been observed both stages their variability. Voltage resonance phenomenon studied material was zero crossing in dependence phase difference transition is accompanied with this phenomenon, which reflected...
We observed an inductive contribution to impedance in granular (Fe0.45Co0.45Zr0.10)x(Al2O3)(1-x) and (Fe0.45Co0.45Zr0.10)x(PZT)(1-x) nanocomposite films deposited Ar + O2 atmosphere. The with x » 0.30 (in dielectric regime) demonstrated negative capacitance effect which were explained by hopping conductance of electrons over FeCoZr nanoparticles covered complicated CoFe-oxides embedded into matrix. In particular, at the determined conditions such a structure resulted increase electron mean...
The temperature and frequency dependences of the admittance real part σ(T, f ) in granular (Fe 45 Co Zr 10 x (Al 2 O 3 100-x nanocomposite films around percolation threshold C were investigated.The behaviour vs. over ranges 77-300 K 50 Hz-1 MHz, respectively, displays predominance an activation (hopping) conductance mechanism for samples below a metallic one beyond determined as 54 ± at.%.The mean hopping range d nanoparticles diameter D was estimated at different phase content x.