The main component of vacuum interrupters responsible for ensuring the correct flow current is contact system. In a environment, due to higher values mean free path electrons and particles in gap, material condition contacts exert greatest influence on development arc discharge. To accurately analyze phenomenon discharge insulating systems, authors conducted time-lapse photographic analysis electric arc. For this purpose, they used test setup comprising chamber, pump set, power load...

The development of power grid infrastructure and increasingly stringent environmental regulations have intensified work, carried out by researchers electrical equipment manufacturers, to develop innovative gas-insulated, environmentally neutral devices. emergence new designs circuit breakers disconnectors, in which the resulting electric arc is extinguished a vacuum environment, requires appropriate techniques for diagnosing chambers responsible dielectric parameters device. following...

This paper investigates the inductive contribution to AC conductance in granular nanocomposites (Fe0.45Co0.45Zr0.10)x(Al2O3)1-x.The initial studied were manufactured Ar+O2 atmosphere by ion-beam sputtering of target containing Fe0.45Co0.45Zr0.10 and alumina stripes then subjected annealing procedure air over temperature range 373 K < Ta 873 K.These samples, before after annealing, using 77 Tp 300 frequency 50 Hz f 1 MHz dependences a real part admittance σ(T, ).Analysis observed σ(f, T p )...

The aim of this article is to present the results research aimed at confirmation whether it possible form an intermediate band in GaAs implantation with H + ions.The obtained were discussed particular emphasis on applications photovoltaic industry.As commonly known, idea solar cells reveals considerable potential as most fundamental principle next generation semiconductors cells.In progress research, a series samples subjected poly-energy ions, followed by high-temperature annealing.Tests...

The paper presents results on the effect of ion implantation (N+, Ne+ and Ar+) annealing silicon doped with B, P, or Sb increase its permittivity. indicate that permittivity is caused by jumping recharging between defects. influence various kinds defects (divacancies, interstitial Si-P3 Si-B2) tg δ implanted has been discussed.

The article presents the results of research on alternating-current electrical conduction in phosphorus-doped silicon, strongly defected by implantation Ne ++ neon ions.An analysis properties recorded at annealing temperature Ta = 373 K and affected changes testing ranging from 253 to 368 as well frequency 50 Hz 5 MHz has been discussed.The obtained have confirmed occurrence two mechanisms semiconductors: band mechanism that is characteristic low values jump one corresponds higher frequencies.

The article presents the results of research on alternating-current electric conduction in boron-doped silicon (ρ = 10 Ω cm), strongly defected by implantation Ne + ions (D 1.5 × 14 cm -2 , E 100 keV).The analysis changes electrical characteristics recorded at sample annealing temperature Ta 373 K has been presented, concerning inuence testing ranging from 253 to 368 as well frequency 50 Hz 5 MHz.The obtained have conrmed occurrence two mechanisms semiconductors, such band mechanism that is...

The main aim of the research was to verify if it is possible create intermediate energy levels in silicon by means ion implantation as well confirm whether band could arise.The tests covered recording conductance and capacitance antimony-doped silicon, implanted with Ne + ions.As a result, identify single deep level sample determine its location gap estimating value activation energy.

The main goal of this work was to conduct a comparative analysis the electrical properties silicon implanted with neon ions, depending on dose ions and type substrate doping, for possibility generating additional energy levels by ion implantation in terms improving efficiency photovoltaic cells made its basis. article presents results research capacitance conductance samples doped boron phosphorus, structure which modified process Ne+ E = 100 keV different doses. changes recorded at...

The article presents the results of laboratory measurements breakdown voltages in a high-voltage vacuum insulating system for different pressures, contact gaps, type electrode contacts and residual gas inside discharge chamber.First all, electrical strength chamber with terminated pads made W 70 Cu 30 75 Cr 25 material was compared selected values gaps.It found that below pressure = 3.0 × 10 -1 Pa reaches an approximately constant value each set gaps .Analytical relationships were determined...

The article presents the experimental results on electric conductivity investigations of gallium arsenide, exposed to polyenergy implantations with H + ions, depending alternating current frequency (50 Hz ÷ 5 MHz), testing temperature (liquid nitrogen ÷373 K) and 15 min isochronous annealing (293 663 K).It has been found that obtained dependences σ(T p , f ) result from a jump mechanism charge transfer between radiation defects form in process ion implantation.Correlations various types...

This paper presents the results of testing electrical strength an insulating system in a vacuum obtained from three noble gases: argon, neon, helium, and air. The breakdown voltages were measured for contact gaps 1 mm 2 mm. A difference was observed pressure range where kept constant. chamber filled with helium residual gases lost its properties at highest among tested (2.00 × 100 Pa gap d = mm), while argon gas lowest 10−1 mm). After decrease strength, intense glow discharge observed....

Considering the results of recent research, it is possible to state that problem thermal stability electrical parameters silicon very important in context eciency commonly used photovoltaic cells.Subsequent investigations conrmed cells strongly inuenced by active defects crystal lattice.Those defects, arising process base material preparation, are responsible for changes values conductivity and activation energy tested material.Taking this into consideration, reasonable carry out research...

The article presents methodology for testing the electric strength of vacuum chambers designed modern medium voltage switchgear developed by authors, using two innovative test stands and constructed research team above.Verification correctness operation stands, as well validity was carried out performing a series tests.It determined that below certain pressure values in tested chamber (from about 5.0 × 10 0 Pa station 1 4.0 -1 2), maintains constant value, which guarantees stable chamber.The...

The article presents the outcome of research on alternating-current electric conduction in silicon doped with boron, phosphorus, and antimony resistivities ρ = 0.01 Ω cm 10 cm, strongly defected by implantation Ne + ions (D 1.5 × 14 -2 , E 100 keV).On basis results obtained for samples annealed at temperature Ta 598 K measured testing Tp 298 frequency f 1 MHz it was possible to carry out an analysis mechanisms depending type concentration dopant.Obtained conrmed occurrence hopping...

Comparison of results mathematical modeling and field tests a transformer differential protection is presented in this paper. An inrush current mode, external two-phase three-phase faults are considered. Proposed model can be used to test different modes operation. Streszczenie. W artykule przedstawiono porownanie wynikow badan i rezultatow modelowania matematycznego zabezpieczen roznicowych transformatorow. Rozpatrzono przypadki prądow rozruchowych oraz zwarc dwufazowych trojfazowych....

This paper presents the results of a comparative analysis dielectric strength disconnecting vacuum interrupters operating on air and helium. The breakdown voltage Ud was measured in pressure range from 8.0 × 10−4 Pa to 3.0 101 for 7.0 102 helium, while varying interelectrode distance 1.0 5.0 mm. Dedicated laboratory workstations were used determine actual values tested precisely measure record test object. It found that helium-filled interrupter maintains its full significantly larger...

The aim of the work is to present possibility generating intermediate levels in band gap p-type silicon doped with boron by using neon ion implantation aspect improving efficiency photovoltaic cells made on its basis. contains an analysis influence dose ions activation energy value additional levels. article presents results measurements capacitance and conductance samples a resistivity ρ = 0.4 Ω cm boron, structure which was modified process Ne+ E 100 keV three different doses D 4.0 × 1013...