A5068573576- Ion-surface interactions and analysis
- Particle accelerators and beam dynamics
- Metal and Thin Film Mechanics
- Plasma Diagnostics and Applications
- Semiconductor materials and devices
- Atomic and Molecular Physics
- Silicon and Solar Cell Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Diamond and Carbon-based Materials Research
- Mass Spectrometry Techniques and Applications
- Muon and positron interactions and applications
- Semiconductor materials and interfaces
- Nuclear Physics and Applications
- Fusion materials and technologies
- Nuclear Materials and Properties
- GaN-based semiconductor devices and materials
- Magnetic confinement fusion research
- Silicon Nanostructures and Photoluminescence
- Thin-Film Transistor Technologies
- Advanced ceramic materials synthesis
- Quantum chaos and dynamical systems
- Silicon Carbide Semiconductor Technologies
- Nanowire Synthesis and Applications
- Semiconductor Quantum Structures and Devices
- Cold Atom Physics and Bose-Einstein Condensates
Maria Curie-Skłodowska University
2016-2025
Institute of Physics
2009-2019
Czech Academy of Sciences, Institute of Physics
2013-2018
It is well known that ion implantation one of the basic tools for semiconductor device fabrication. The process itself damages, however, crystallographic lattice semiconductor. Such damage can be removed by proper post-implantation annealing implanted material. Annealing also allows electrical activation dopant and creates areas different types in a However, such thermal treatment particularly challenging case gallium nitride since it decomposes at relatively low temperature (~800 °C)...
Radiative environments can induce defects in the exposed materials, whose accumulation leads to defect structure transformations and optical quenching. Therefore, their role is crucial for fabrication of devices. β‐Ga 2 O 3 :RE system seems attractive prospective optoelectronic applications. In this research, structural created crystal lattice upon Sm ion implantation (010)‐oriented recovery after annealing are investigated. Channeling Rutherford backscattering spectrometry (RBS/c) supported...
From the wide range of engineering materials traditional Stellite 6 (cobalt alloy) exhibits excellent resistance to cavitation erosion (CE). Nonetheless, influence ion implantation cobalt alloys on CE behaviour has not been completely clarified by literature. Thus, this work investigates effect nitrogen (NII) HIPed improvement CE. Finally, cobalt-rich matrix phase transformations due both NII and load were studied. The stellites ion-implanted 120 keV N+ ions two fluences: 5 × 1016 cm−2 1...
The growing demand for modern steels showing corrosion and tribological resistance has led to their increased use in the production of medical devices. This study analyzed effect shot peening on wear 0.9% NaCl solution 17-4PH steel produced by direct laser metal sintering (DMLS) technology. study's novelty relies revealing (SP) surface treatment wet sliding with DMLS. Moreover, context application devices, environment were selected, SP processes conducted using CrNi ceramic (ZrO2) beads....
GeSn alloys hold great promise as high-performance, low-cost, near- and short-wavelength infrared photodetectors with the potential to replace relatively expensive currently market-dominant InGaAs- InSb-based photodetectors. In this Letter, we demonstrate room-temperature pn fabricated by a complementary metal-oxide-semiconductor compatible process, involving Sn P ion implantation flash-lamp annealing prior device fabrication. The fabrication process enables alloying of Ge at concentrations...
This paper presents a systematic study of the charge transport behavior heavily doped n-type Ge layers with As and Sb. A nonequilibrium method ion implantation followed by milliseconds flash lamp annealing is applied to synthesize n++ (Ge:As Ge:Sb). The resulting materials contain free electrons density above 3 × 1019 cm−3 mobility more than 220 cm2/(V s). Quantum corrections conductance in magnetic field are observed at low temperatures. Weak localization persists up 30 K Ge:Sb, while only...
The best method for the impurity doping to host material is ion implantation. Due high melting point of rare earth standard metal sources are useless. One solution use chemical compounds earths characterized by low point. In this paper we describe novel design source suitable refractory (e.g., earths) dependencies Eu(+) current on cathode and arc currents as well hydrogen flow presented. Europium (III) chloride europium atoms was used. ions were produced during collisions evaporated...
In the present study, diffusion of magnesium in gallium nitride was investigated. order to ensure high structural quality and purity analyzed material, bulk crystals, grown by Halide Vapor Phase Epitaxy on ammonothermal native seeds, were used. Samples polarity (0001), (10-10) (11–20) prepared from them implanted with ions fluence 1 × 1016 cm−2 230 keV energy. X-ray diffraction used assess samples at each stage study. Ultra-high-pressure annealing carried out temperature range 1250–1450 °C...
From the wide range of engineering materials traditional Stellite 6 alloy exhibits excellent cavitation erosion (CE) resistance. In this work, effect nitrogen ion implantation HIPed on improvement CE resistance and both cobalt-rich matrix phase transformation due to were stated. The stellites ion-implanted by 120 keV N+ ions two fluences: 5x1016 cm-2 1x1017 comparatively analysed with unimplanted stellite AISI 304 stainless steel. tests conducted according ASTM G32 stationary specimen...
One of the solutions enabling performance progress, which can overcome downsizing limit in silicon technology, is integration different functional optoelectronic devices within a single chip. Silicon with its indirect band gap has poor optical properties, main drawback. Therefore, material to be used for on-chip interconnections, e.g. direct III–V compound semiconductor material. In paper we present synthesis crystalline InP nanodots (NDs) on using combined ion implantation and millisecond...
The last missing piece of the puzzle for full functionalization group IV optoelectronic devices is a direct bandgap semiconductor made by CMOS compatible technology. Here, we report on fabrication GeSn alloys with Sn concentrations up to 4.5% using ion implantation followed millisecond-range explosive solid phase epitaxy. n-type single crystalline are realized co-implantation and P into Ge. Both activation formation performed during single-step flash lamp annealing 3 ms. engineering in as...
17-4PH steel is a widely used grade for precipitation hardening. The growing demand modern materials with high corrosion and tribological resistance has led to its increased use the production of medical devices. With additive manufacturing (AM), complex functional shapes can be achieved applications. Direct laser metal sintering (DMLS) technology makes it possible obtain products architectures, but also faces various challenges, including imperfections in surface layer due 3D printing...
A new numerical Monte Carlo method based model of a hot cavity surface ionization ion source is presented in this paper. The model, intended to support the studies on phenomena widely used class sources, takes into account geometry and extraction system, ionizer temperature other features. results efficiency calculations for various configurations field are reviewed. dominant role region near opening described. Simulated dependences working parameters like length temperature, potential...
The unique properties of SOI wafers enable the integration heterogeneous materials with distinct functionalities in different layers. In particular, III-V compound semiconductors are very attractive for low-noise and high-speed electronic photonic components integrated on a single chip. We have developed CMOS compatible fully solution silicon technology optoelectronic applications. InAs semiconductor nanostructures synthesized using combined ion beam implantation millisecond liquid-phase...
Controlled doping with an effective carrier concentration higher than 1020 cm-3 is a key challenge for the full integration of Ge into silicon-based technology. Such highly doped layer both p- and n type needed to provide ohmic contacts low specific resistance. We have studied effect ion implantation parameters i.e., energy, fluence, type, protective on electrons. shown that maximum electron increases as thickness decreases. The degradation implanted surface can be minimized by performing at...
This paper presents the results of a study investigating tribological properties Stellite 6 alloy following implantation nitrogen ions at 120 keV and manganese 175 keV. The demonstrate that coefficient friction wear implanted samples are several times lower until modified layer is worn. thickness this depends on ion beam energy fluence, it increases as fluence increased. Following with 1 × 1017 N+/cm2, about 1.0 (1) μm exceeding range by four times. phenomenon known long-range effect. It...