We report the first experimental demonstration of electrical spin injection, transport and detection in bulk germanium (Ge). The non-local magnetoresistance n-type Ge is observable up to 225K. Our results indicate that relaxation rate closely related momentum scattering rate, which consistent with predicted Elliot-Yafet mechanism for Ge. bias dependence nonlocal lifetime also investigated.

The integration of Ge on Si for photonics applications has reached a high level maturity: photodetectors are available the platform in foundry processes, and Si/Ge heterostructure multiple quantum-well photodiodes rapidly progressing toward light modulation. These successes result from decades development high-quality material growth integration, which, more recently, sparked an increasingly broad field photonic device research based heterostructures that extends quantum cascade lasers to...

We present experimental results on the fabrication and characterization of vertical Si tunneling field-effect transistors (TFETs) in a device geometry with line gate field. Compared to TFETs without this modification, on-currents are increased by more than one order magnitude <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i> <sub xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> = 1.1 μA/μm at xmlns:xlink="http://www.w3.org/1999/xlink">V</i>...

Multi-quantum well light-emitting diodes, consisting of ten alternating GeSn/Ge-layers, were grown by molecular beam epitaxy on Si. The Ge barriers 10 nm thick, and the GeSn wells with 7% Sn thicknesses between 6 12 nm. electroluminescence spectra measured at 300 80 K yield a broad intensive luminescence band. Deconvolution revealed three major lines produced that can be interpreted in terms quantum confinement. We interpret represent two direct lines, formed transitions light heavy hole...

We report on the fabrication and electro-optical characterization of SiGeSn multi-quantum well PIN diodes. Two types diodes, in which two four quantum wells with barrier thicknesses 10 nm each are sandwiched between B- Sb-doped Ge-regions, were fabricated as single-mesa devices, using a low-temperature process. discuss measurements diode characteristics, optical responsivity room-temperature electroluminescence compare theoretical predictions from band structure calculations.

We present a design for silicon-compatible vertical Germanium pin photodiodes structured into all-dielectric metasurfaces. Proof-of-principle metasurfaces are fabricated on silicon-on-insulator wafers in top-down process. Simulations and measurements of the spectroscopic properties, specifically absorption, show high spectral selectivity, absorption efficiencies as large those bulk layers with about four times Ge layer thicknesses. Our metasurface structures can be tuned to target wavelength...

Abstract The combination of nanohole arrays with photodetectors can be a strategy for the large-scale fabrication miniaturized and cost-effective refractive index sensors on Si platform. However, complementary metal–oxide–semiconductor (CMOS) processes place restrictions in particular material that used structures. Here, we focus using CMOS compatible transition metal nitride Titanium Nitride (TiN) (NHAs). We investigate optical properties TiN NHAs different thicknesses (50 nm, 100 150 nm)...

Optical metasurfaces enable the manipulation of light–matter interaction in ultrathin layers. Compared with their metal or dielectric counterparts, hybrid resulting from combination and metallic nanostructures can offer increased possibilities for interactions between modes present system. Here, we investigate lattice resonances a metal–dielectric metasurface obtained single-step nanofabrication process. Finite-difference time domain simulations show avoided crossing appearing...

In chiral ferromagnets, weak spin-orbit interactions twist the ferromagnetic order into spirals, leading to helical order. We investigate an extended Ginzburg-Landau theory of such systems where is destabilized in favor crystalline phases. These phases are based on periodic arrangements double-twist cylinders and strongly reminiscent blue liquid crystals. discuss relevance for phase diagram ferromagnet MnSi.

Refractive index sensing is a highly sensitive and label-free detection method for molecular binding events. Commercial implementations of biosensing concepts based on plasmon resonances typically require significant external instrumentation such as microscopes spectrometers. Few exist that are direct integration plasmonic nanostructures with optoelectronic devices on-chip integration. Here, we present CMOS-compatible refractive sensor consisting Ge heterostructure PIN diode in combination...

We compared the temperature dependence of spin lifetime in n-Ge characterized from three-terminal (3T) and four-terminal (4T) Hanle measurements using single-crystalline Fe/MgO/n-Ge tunnel junctions. The bias conditions two schemes were chosen to be about same order compare lifetimes (τ3T τ4T). dependences τ3T τ4T behave a very similar way at low region (T ≤ 10 K), both decrease as increases, which is consistent with dominating Elliot–Yafet relaxation mechanism bulk Ge. However, when higher...

The group-IV semiconductor alloy Ge1−x−ySixSny has recently attracted great interest due to its prospective potential for use in optoelectronics, electronics, and photovoltaics. Here, we investigate molecular beam epitaxy grown alloys lattice-matched Ge with large Si Sn concentrations of up 42% 10%, respectively. samples were characterized detail by Rutherford backscattering/channeling spectroscopy composition crystal quality, x-ray diffraction strain determination, photoluminescence the...

We present experimental results on the realization of p-channel mode Ge(Sn) heterojunction band-to-band tunneling field effect transistors. investigate influence three device parameters (drain doping, channel length, and tunnel barrier height at source side) semiconductor body devices performance. achieve a complete suppression n-channel in p-type operating conditions by systematically reducing drain doping from 1·10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...

GeSn alloys hold great promise as high-performance, low-cost, near- and short-wavelength infrared photodetectors with the potential to replace relatively expensive currently market-dominant InGaAs- InSb-based photodetectors. In this Letter, we demonstrate room-temperature pn fabricated by a complementary metal-oxide-semiconductor compatible process, involving Sn P ion implantation flash-lamp annealing prior device fabrication. The fabrication process enables alloying of Ge at concentrations...

Titanium nitride (TiN) is a complementary metal-oxide-semiconductor (CMOS) compatible material with large potential for the fabrication of plasmonic structures suited device integration. However, comparatively optical losses can be detrimental application. This work reports CMOS TiN nanohole array (NHA) on top multilayer stack use in integrated refractive index sensing high sensitivities at wavelengths between 800 and 1500 nm. The stack, consisting NHA silicon dioxide (SiO2) layer Si as...

Relaxed Si1−xGex layers on Si(001) serve as virtual substrates for strained Si or Ge layers. However, plastically relaxed inevitably contain misfit and threading dislocations, negatively affecting devices. Deposition of a SiGe layer the backside substrate introduces dislocation reservoir at wafer edge that can reduce density (TDD) Si0.98Ge0.02/Si layers, these preexisting dislocations start gliding toward center upon reaching critical thickness. Here, we show this low-strain system be used...

We report electrical spin injection and detection in degenerately doped n-type Ge channels using Mn5Ge3C0.8/Al2O3/n^{+}-Ge tunneling contacts for detection. The whole structure is integrated on a Si wafer complementary metal-oxide-semiconductor compatibility. From three-terminal Hanle-effect measurements, we observe accumulation up to 10 K. lifetime extracted be 38 ps at T = 4K Lorentzian fitting, the diffusion length estimated 367 nm due high coefficient of highly channel.

Metallic nanoantennas can be used to enhance the efficiency of optical device operation by re-distributing electromagnetic energy. Here, we investigate effect a random distribution disc-shaped Al different diameters deposited on Ge-on-Si PIN-photodetectors wavelength-dependent responsivity. We compare our experimental results simulations and find that largest responsivity enhancement is obtained for wavelengths correspond energies at or below bandgap energy Ge. argue this result...

Full integration of Ge-based alloys like GeSn with complementary-metal-oxide-semiconductor technology would require the fabrication p- and n-type doped regions for both planar tri-dimensional device architectures which is challenging using in situ doping techniques. In this work, we report on influence ex structural, electrical optical properties alloys. realized by P implantation into alloy layers grown molecular beam epitaxy (MBE) followed flash lamp annealing. We show that effective...

GeSn as a group-IV material opens up new possibilities for realizing photonic device concepts in Si-compatible fabrication processes. Here we present results of the ellipsometric characterization highly p- and n-type doped Ge0.95Sn0.05 alloys deposited on Si substrates investigated wavelength range from 1 to 16 μm. We discuss suitability these films integrated plasmonic applications infrared region.

While GeSn alloys with high Sn content constitute direct group-IV semiconductors, their growth on Si remains challenging. The deposition of a few monolayers pure Ge and overgrowth using molecular beam epitaxy can be means obtaining Sn-rich quantum wells very while maintaining crystal quality. Here, we provide structural compositional information such structures accuracy. Based our characterization results theoretically predict transition energies compare them experimental from...

The pseudomorphic growth of Ge1-xSnxon Ge causes in-plane compressive strain, which degrades the superior properties Ge1-xSnxalloys. Therefore, efficient strain engineering is required. In this article, we present and band-gap in Ge1-xSnxalloys grown on a virtual substrate using post-growth nanosecond pulsed laser melting (PLM). Micro-Raman x-ray diffraction (XRD) show that initial removed. Moreover, for PLM energy densities higher than 0.5 J cm-2, Ge0.89Sn0.11layer becomes tensile strained....