A5017860382- Photonic and Optical Devices
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- Quantum and electron transport phenomena
- Optical Network Technologies
- Nanowire Synthesis and Applications
- Concrete and Cement Materials Research
- Clay minerals and soil interactions
- Polymer Nanocomposites and Properties
- Plasmonic and Surface Plasmon Research
- Photonic Crystals and Applications
- Advanced ceramic materials synthesis
- Advanced Memory and Neural Computing
- CO2 Sequestration and Geologic Interactions
- Advanced Photonic Communication Systems
- Zeolite Catalysis and Synthesis
- Topological Materials and Phenomena
- Silicon Nanostructures and Photoluminescence
University of Stuttgart
2013-2017
Norwegian University of Science and Technology
2012
We show experimentally that gaseous CO(2) intercalates into the interlayer space of synthetic smectite clay Na-fluorohectorite at conditions not too far from ambient. The mean repetition distance when is intercalated found to be 12.5 Å for -20 °C and 15 bar. magnitude expansion upon intercalation indistinguishable observed in dehydrated-monohydrated transition H(2)O, but possibility water ruled out by a careful analysis experimental repeating measurements exposing nitrogen gas. dynamics...
For Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> charge trapping analysis, Metal/Al /SiO /Si (MAOS) structures are fabricated from atomic layer deposition and plasma enhanced chemical vapor deposition-based SiO thin films, respectively. The MAOS devices showed high memory window of ~7.81V@16V sweep voltage leakage current density ~3.88 × 10 <sup...
We report electrical spin injection and detection in degenerately doped n-type Ge channels using Mn5Ge3C0.8/Al2O3/n^{+}-Ge tunneling contacts for detection. The whole structure is integrated on a Si wafer complementary metal-oxide-semiconductor compatibility. From three-terminal Hanle-effect measurements, we observe accumulation up to 10 K. lifetime extracted be 38 ps at T = 4K Lorentzian fitting, the diffusion length estimated 367 nm due high coefficient of highly channel.
Metallic nanoantennas can be used to enhance the efficiency of optical device operation by re-distributing electromagnetic energy. Here, we investigate effect a random distribution disc-shaped Al different diameters deposited on Ge-on-Si PIN-photodetectors wavelength-dependent responsivity. We compare our experimental results simulations and find that largest responsivity enhancement is obtained for wavelengths correspond energies at or below bandgap energy Ge. argue this result...
We report on the first experimental demonstration of a monolithic integrated Group-IV Ge semiconductor optical amplifier (SOA) - Zener-Emitter (ZE). The ZE is device featuring light amplification up to 4.7 dB (92 mA) at center wavelength 1700 nm and gain-bandwidth 98 Si (100). Our novel direct Zener band-to-band tunneling (BTBT) injection method enables low-voltage electron emission beyond Boltzmann-limit (38 mV/dec 1.55 K, 88 300 K), achieving population-inversion 0.45 V (41 mA). possesses...
We report on the study of electrical and magnetic properties Mn5Ge3C0.8 contacts deposited highly doped n-Ge (1 0 0) as a potentially complementary metal–oxide–semiconductor (CMOS)-compatible material system for spin injection into Ge. is ferromagnet with Curie temperature 445 K resistivity that comparable to extract work function from capacitance measurements obtain specific contact rC = 5.0 Ω cm2 transmission-line measurements. discuss possible origins large
As Ge1−x Sn x is being investigated for CMOS applications, obtaining contacts to n-type with low specific contact resistivity (ρ c) a major concern. Here, we present results on resistivities of Sb doped 0 ≤ 0.08 also varying doping concentrations using Ni, Ag and Mn as metals. Our show that Ni offers the lowest ρ c all values . The measured highly n-doped Ge0.92Sn0.08 2.29 × 10−6 Ω cm2. We find strong dependence doping, which attribute fact Fermi level pinning in metal/n-Ge1−x contacts.
While monolithically integrated light sources for Si photonics have been investigated using Ge and GeSn on substrates [1-3], the challenges in material quality efficiency remain to be solved. Turning Group-IV into a direct semiconductor CMOS compatible concepts [4] promises enhanced electrical optical conversion efficiencies. However, red-shift emitting wavelength is challenging peripheral devices such as modulators photodetectors complex optoelectronic circuits (OEICs) [5]. We new concept...
In this paper we report experimental results on the fabrication and characterization of vertical Ge gate-all-around p-channel TFETs, utilizing GeSn as a channel material. Through two sample series, potential challenges implementing low-band gap material are reviewed. It is verified that ION can be effectively enhanced by increasing Sn-content in GeSn-channel, due to tunneling probabilities. Further it found when limited 10 nm δ-layer, <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...