A5019405026- 2D Materials and Applications
- Silicon Nanostructures and Photoluminescence
- Thin-Film Transistor Technologies
- Silicon and Solar Cell Technologies
- Semiconductor materials and devices
- MXene and MAX Phase Materials
- Graphene research and applications
- ZnO doping and properties
- Advanced Memory and Neural Computing
- Perovskite Materials and Applications
- Chalcogenide Semiconductor Thin Films
- Integrated Circuits and Semiconductor Failure Analysis
- Quantum Dots Synthesis And Properties
- Thermal Radiation and Cooling Technologies
- Quantum optics and atomic interactions
- Topological Materials and Phenomena
- Heusler alloys: electronic and magnetic properties
- Metamaterials and Metasurfaces Applications
- Electronic and Structural Properties of Oxides
- Advanced Condensed Matter Physics
- Phase-change materials and chalcogenides
- Gas Sensing Nanomaterials and Sensors
- Advanced Antenna and Metasurface Technologies
- Semiconductor Quantum Structures and Devices
- Photonic and Optical Devices
Shenzhen University
2018-2024
Helmholtz-Zentrum Dresden-Rossendorf
2018-2024
Carl von Ossietzky Universität Oldenburg
2024
TU Dresden
2018-2023
Chinese Academy of Sciences
2016-2019
Institute of Modern Physics
2019
Ningbo Institute of Industrial Technology
2016-2017
Shanghai University
2016
Two-dimensional (2D) van der Waals materials with broadband optical absorption are promising candidates for next-generation UV-vis-NIR photodetectors. FePS3, one of the emerging antiferromagnetic a wide bandgap and p-type conductivity, has been reported as an excellent candidate UV optoelectronics. However, high sensitivity photodetector self-driven mode based on FePS3 not yet realized. Here, we report high-performance self-powered multilayer MoSe2/FePS3 type-II n-p heterojunction working...
Deficient intrinsic species and suppressed Curie temperatures (Tc) in two-dimensional (2D) magnets are major barriers for future spintronic applications. As an alternative, delaminating non-van der Waals (vdW) can offset these shortcomings involve robust bandgaps to explore 2D magneto-photoconductivity at ambient temperature. Herein, non-vdW α-MnSe2 is first delaminated as quasi-2D nanosheets the study of emerging semiconductor, ferromagnetism behaviors. Abundant nonstoichiometric surfaces...
The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering techniques effective tuning their optoelectronic properties. Specifically, controllable doping is essential. For conventional bulk semiconductors, ion implantation most developed method offering stable and tunable doping. In this work, we demonstrate n-type in MoSe2 flakes realized by low-energy Cl+ ions followed millisecond-range flash lamp annealing (FLA)....
Abstract Trions, quasi‐particles consisting of two electrons combined with one hole or holes electron, have recently been observed in transition metal dichalcogenides (TMDCs) and drawn increasing attention due to potential applications these materials light‐emitting diodes, valleytronic devices as well for being a testbed understanding many‐body phenomena. Therefore, it is important enhance the trion emission its stability. In this study, MoSe 2 /FePS 3 van der Waals heterostructure (vdWH)...
Layered van der Waals crystals exhibit unique properties making them attractive for applications in nanoelectronics, optoelectronics, and sensing. The integration of two-dimensional materials with complementary metal-oxide-semiconductor (CMOS) technology requires controllable n- p-type doping. In this work, we demonstrate the fabrication vertical p-n heterojunctions made tin monoselenide (SnSe) n-type diselenide (SnSe2). heterojunction is created a single flake by NH3-plasma-assisted phase...
Controlled doping with an effective carrier concentration higher than 1020 cm-3 is a key challenge for the full integration of Ge into silicon-based technology. Such highly doped layer both p- and n type needed to provide ohmic contacts low specific resistance. We have studied effect ion implantation parameters i.e., energy, fluence, type, protective on electrons. shown that maximum electron increases as thickness decreases. The degradation implanted surface can be minimized by performing at...
Unique characteristics of transition metal dichalcogenides (TMDCs) such as their tunable band gap and ultra-thin body thickness make them potential candidates for applications in optoelectronic, gas sensing energy storage devices. In this work, 1.8 GeV Ta ions at different ion fluences ranging from 1 × 109 cm−2 to 6 1010 were used introduce amorphous defective regions, latent tracks, MoSe2 study the electronic transport behavior irradiated TMDC-channel field-effect transistors (FETs)....
Near-field subwavelength imaging has been realized at visible and mid-infrared frequencies, but it not achieved near-infrared (NIR). In this work, the transparent conducting oxides (TCO)-based near-field superlenses working NIR frequencies were proposed. As one of easily available TCO materials, Al-doped ZnO (AZO) was considered in both stratified ZnO-AZO-ZnO single-layered AZO structures, which had resolution better than λ/25 a wavelength 2.57μm andλ/20 2.01μm, respectively. These findings...
Understanding of the metal-insulator transition (MIT) in correlated transition-metal oxides is a fascinating topic condensed matter physics and precise control such transitions plays key role developing novel electronic devices. Here we report an effective tuning MIT epitaxial SrVO3 (SVO) films by expanding out-of-plane lattice constant without changing in-plane parameters, through helium ion irradiation. Upon increase fluence, observe with crossover from metallic to insulating state SVO...
N-type doping in GaAs is a self-limited process, rarely exceeding carrier concentration level of 1019 cm−3. Here, we investigated the effect intense pulsed light melting on defect distribution and activation efficiency chalcogenide-implanted by means positron annihilation spectroscopy electrochemical capacitance–voltage techniques. In chalcogenide-doped GaAs, donor–vacancy clusters are mainly responsible for donor deactivation. Using positrons as probe atomic scale open volumes DFT...
With the demand of aggressive scaling in nanoelectronics, further progress can be realized by integration high mobility semiconductors, such as III–V compound with complementary metal‐oxide‐semiconductor (CMOS) technology. In this study, formation shallow n–p and p–n junctions GaAs utilizing ion implantation S Zn, respectively, followed millisecond‐range flash lamp annealing (FLA) is presented. The distribution implanted elements obtained secondary mass spectrometry (SIMS) shows that FLA...
Abstract Ion implantation of S and Te followed by sub-second flash lamp annealing with peak temperature about 1100 °C is employed to obtain metallic n ++ -GaAs layers. The electron concentration in annealed GaAs as high 5 × 10 19 cm −3 , which several times higher than the doping level achievable alternative methods. We found that heavily doped exhibits positive magnetoconductance range 3–80 K, attributed magnetic field suppressed weak localization. By fitting results Hikami–Larkin–Nagaoka...
The GaAs based diluted magnetic semiconductor, (Ga, Mn)As, with the unique advantage of manipulating spin and charge was widely investigated in scientific community considered as a potential material for spintronic devices. However, its Curie temperature (
Semiconducting halide perovskite nanoparticles support Mie-type resonances that confine light on the nanoscale in localized modes with well-defined spatial field profiles yet unknown near-field dynamics. We introduce an interferometric scattering-type microscopy technique to probe local electric dynamics at surface of a single MAPbI
Flexible thin film silicon solar modules on heat-resistant transparent flexible substrates are promising to achieve high efficiency by a combination of high-quality films and fully monolithic series integration. In this work, performance superstrate hydrogenated amorphous (a-Si:H) cells glass using boron-doped zinc oxide (BZO) front electrode have been investigated. Compared with conventional glass, BZO exhibited mixed structure large-sized pyramid small-sized grain, preferential crystalline...