A5081886011- Silicon and Solar Cell Technologies
- Semiconductor materials and interfaces
- Integrated Circuits and Semiconductor Failure Analysis
- Magnetic Field Sensors Techniques
- Scientific Measurement and Uncertainty Evaluation
- Vacuum and Plasma Arcs
- Advanced Materials and Semiconductor Technologies
- solar cell performance optimization
- Chalcogenide Semiconductor Thin Films
Lublin University of Technology
2020-2022
The main goal of this work was to conduct a comparative analysis the electrical properties silicon implanted with neon ions, depending on dose ions and type substrate doping, for possibility generating additional energy levels by ion implantation in terms improving efficiency photovoltaic cells made its basis. article presents results research capacitance conductance samples doped boron phosphorus, structure which modified process Ne+ E = 100 keV different doses. changes recorded at...
The aim of the work is to present possibility generating intermediate levels in band gap p-type silicon doped with boron by using neon ion implantation aspect improving efficiency photovoltaic cells made on its basis. contains an analysis influence dose ions activation energy value additional levels. article presents results measurements capacitance and conductance samples a resistivity ρ = 0.4 Ω cm boron, structure which was modified process Ne+ E 100 keV three different doses D 4.0 × 1013...
The article presents methodology for testing the electric strength of vacuum chambers designed modern medium voltage switchgear developed by authors, using two innovative test stands and constructed research team above.Verification correctness operation stands, as well validity was carried out performing a series tests.It determined that below certain pressure values in tested chamber (from about 5.0 × 10 0 Pa station 1 4.0 -1 2), maintains constant value, which guarantees stable chamber.The...