This work presents the preliminary research on Metal-Insulator-Metal (MIM) structures containing copper oxide (CuO) layers for memory applications. Structural and optical investigations of fabricated materials have shown distinct differences in chemical compositions 'as grown' thermally annealed CuO, i.e., 'HT + RTP' film. Those strongly influence electrical behavior MIM structures. The examined performance devices revealed stability repeatability HRS/LRS ratio over time. presented results...

In this paper we demonstrate 450 nm (Al,In)GaN graded index separate confinement heterostructure travelling wave optical amplifier with a double 'j-shape' waveguide. The length of the is 2.5 mm and width ridge µm. active region consists three 3.5 thick quantum wells. measured gain under CW operation in room temperature exceeded 29 dB for low power input signals. saturation output was 21 dBm 400 mA driving current. demonstrated amplifier, provides good solution blue light, all nitrides,...

Scandium oxide (Sc 2 O 3 ) films are deposited by reactive magnetron sputtering. The effects of annealing on the structure, as well optical, mechanical, and electrical properties investigated. detailed investigation mechanical high load indentation resistance in combination with optical is done. It noted that after at 300 °C, extinction coefficient refractive index slightly decreases. reported before annealing, Sc cubic phase remains very hard (19 GPa) resistant to (up 1N) test. Moreover,...

Gallium nitride (GaN) doped with germanium at a level of 1020 cm−3 is proposed as viable material for cladding layers in blue- and green-emitting laser diodes. Spectral reflectometry ellipsometry are used to provide evidence reduced index refraction such layers. The refractive-index contrast undoped GaN about 0.990, which comparable aluminium gallium (AlGaN) an composition 6%. Germanium-doped lattice-matched native substrates; therefore, they introduce no strain, cracks, wafer bowing. Their...

The future applications of hyperbolic metamaterials demand stacks materials with alternative ultra-thin conductive/dielectric films good homogeneity the thickness and reduced roughness level. In this work, technology pulsed-DC magnetron sputtering aluminum was optimized using Taguchi method in order to fabricate Al improved performed structural characterization proved smaller domains better surface. process used a multilayer structure Al/HfOx as metamaterial media. fabricated structures were...

Colloidal cubic silicon-carbide nanocrystals have been fabricated, characterized, and introduced into metal–insulator–semiconductor metal–insulator–metal structures based on hafnium oxide layers. The fabricated were characterized through the stress-and-sense measurements in terms of device capacitance, flat-band voltage shift, switching characteristics, retention time. examined electrical performance sample has demonstrated feasibility application both types SiC nanoparticles memory devices.

In this paper, the authors present new double gate dielectric structure for nonvolatile semiconductor memory (NVSM) devices which is based of hafnium dioxide (HfO2). The novelty relays on introduction ultrathin silicon oxynitride (SiOxNy) formed by plasma enhanced chemical vapor deposition (PECVD). Fabricated test structures with PECVD layers show repetitious behavior hysteresis characteristics in comparison to as tunnel (bottom) dielectric, stability loop observed after completing first...

The feasibility of the application double-gate dielectric stacks with fabricated by r.f. reactive magnetron sputtering hafnium oxide layers in nonvolatile semiconductor memory (NVSM) devices was investigated. Significant retention time demonstrated. A very broad window (extrapolated at 10 years) flat-band voltage (UFB) value order 2.6 V obtained. Moreover, stability electrical characteristics metal–insulator–semiconductor structures after gamma and electron irradiation have been observed,...

This work is devoted to the technology and characterization of silicon oxynitride layers (SiOxNy) formed by Plasma Enhanced Chemical Vapor Deposition (PECVD). In course this thermal stability deposited was also examined. Expected changes in structure, chemical composition electro-physical properties obtained were investigated means spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS) electrical manufactured test structures...

The continuous development of ALD thin films demands ongoing improvements and changes toward fabricating materials with tailored properties that are suitable for different practical applications. Ozone has been recently established as a precursor, distinct advantages over the alternative oxidizing precursors in ALDs advanced dielectric films. This study reports alumina (Al2O3) hafnia (HfO2) formation using an O3 source compares obtained structural electrical properties. performed...

In this paper we investigate influence of radio frequency plasma enhanced chemical vapor deposition (RF PECVD) process parameters, which include gas flows, pressure and temperature, as well a way sample placement in the reactor, on optical properties rate silicon nitride (SiNx) thin films. The parameters has been determined using Taguchi's orthogonal tables approach. As result elevating samples above electrode, it found that strongly increases with distance between stage reaches its maximum...

This work demonstrated the optimization of HiPIMS reactive magnetron sputtering hafnium oxynitride (HfOxNy) thin films. During procedure, employing Taguchi orthogonal tables, parameters examined dielectric films were explored, utilizing optical methods (spectroscopic ellipsometry and refractometry), electrical characterization (C-V, I-V measurements MOS structures), structural investigation (AFM, XRD, XPS). The thermal stability fabricated HfOxNy layers, up to 800 °C, was also investigated....

Abstract The feasibility of ultra‐shallow fluorine and nitrogen implantation from RF plasma into silicon substrates, the correlation between process parameters, electro‐physical properties obtained Metal‐Insulator‐Semiconductor (MIS) structures with hafnium oxide (HfO x ) layer as a gate dielectric was investigated. analysis electrical characteristics MIS proved that almost all fabricated after are characterized by lower flat‐band voltage (U fb value (in absolute values) effective charge (Q...