A5005124584- GaN-based semiconductor devices and materials
- Metal and Thin Film Mechanics
- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Ga2O3 and related materials
- ZnO doping and properties
- Silicon Carbide Semiconductor Technologies
- Nanowire Synthesis and Applications
- Acoustic Wave Resonator Technologies
- Plasma Diagnostics and Applications
- Rare-earth and actinide compounds
- nanoparticles nucleation surface interactions
- Inorganic Chemistry and Materials
- Advancements in Semiconductor Devices and Circuit Design
- MXene and MAX Phase Materials
- Semiconductor materials and interfaces
- Advanced ceramic materials synthesis
- Strong Light-Matter Interactions
- Ocular and Laser Science Research
- Boron and Carbon Nanomaterials Research
- Thermal properties of materials
- 2D Materials and Applications
- Advanced Surface Polishing Techniques
- Photocathodes and Microchannel Plates
- Spectroscopy and Laser Applications
Institute of High Pressure Physics
2009-2023
Polish Academy of Sciences
2006-2023
Warsaw University of Technology
2000-2002
Crystallization of GaN by hydride vapor phase epitaxy (HVPE) on ammonothermally grown seed crystals is described. The initial growth conditions for HVPE are determined and applied further bulk growth. Smooth layers up to 1.1 mm thick excellent crystalline quality, without cracks, with low dislocation density obtained. Preparation the free-standing HVPE-GaN crystal slicing structural optical quality resulting wafer presented.
Raman spectra of Ga1−xMnxN crystals grown by the resublimation method have been investigated. New bands around 300 and 667 cm−1, as well a broad structure near 600 not observed in undoped GaN found. The temperature dependence major has measured. simple model lattice dynamics presented, assigned to disorder-activated phonon modes, good agreement with calculated density states.
Abstract We report a kV class, low ON-resistance, vertical GaN junction barrier Schottky (JBS) diode with selective-area p-regions formed via Mg implantation followed by high-temperature, ultra-high pressure (UHP) post-implantation activation anneal. The JBS has an ideality factor of 1.03, turn-on voltage 0.75 V, and specific differential ON-resistance 0.6 mΩ·cm 2 . breakdown the is 915 corresponding to maximum electric field 3.3 MV cm −1 These results underline that high-performance can be...
We report on vertical GaN junction barrier Schottky (JBS) diodes formed by Mg ion implantation and ultrahigh -pressure annealing (UHPA). The static ON-state characteristics of the show an ideality factor 1.05, a turn-on voltage ~0.7 V, current rectification ratio <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim 10^{11}$ </tex-math></inline-formula> , low differential specific ON-resistance that scales...
Abstract It is demonstrated in this paper that 1.9‐mm‐thick gallium nitride grown by Hydride Vapor Phase Epitaxy (HVPE) on an ammonothermally GaN seed can reproduce the structural, terms of defects, properties seed. The etch pit density and its correlation to threading dislocation ammonothermal substrate HVPE‐GaN layer presented analyzed. However, it has recently been observed for thicker than 2 mm some additional defects are formed new material. Therefore, three HVPE growth runs were...
We report on the InGaN multi-quantum well laser diodes (LDs) made by RF plasma-assisted molecular beam epitaxy (PAMBE). The operation was demonstrated in a temperature range from 297 K up to 360 with pulsed current injections using 50 ns pulses at 0.25% duty cycle. threshold density and voltage for these LDs were 9 kA cm−2 (680 mA) 8.2 V respectively K. slope efficiency is 0.35–0.47 W A−1. A high output power of 1.1 obtained during pulse 3.6 8.7 V. compare parameters two five InGaN/InGaN...
Crystallization of GaN by hydride vapor phase epitaxy (HVPE) on ammonothermally grown seed crystals is overviewed. Morphology the crystal growing surface at beginning crystallization process and end it presented. Based these results a rough growth model proposed. Smooth layers up to 1 mm thick high purity, excellent crystalline quality, without any cracks, with low dislocation density are grown. Preparation free-standing HVPE-GaN slicing as well structural, electrical optical qualities...
Nonpolar multiple quantum wells (MQWs) have been grown by plasma assisted molecular beam epitaxy on bulk GaN crystals oriented along the (112¯0) direction. The photoluminescence intensity of nonpolar MQWs was significantly higher than that found for polar samples, both at low (10 K) and room temperature. This is a consequence lack built-in electric field in samples Clearly resolved spectra excitons observed studied MQWs. Studies these excitonic structures, means polarization temperature...
One of the most important problems in III-nitride violet laser diode technology is lattice mismatch between AlGaN cladding layers and rest epitaxial structure. For efficiently working devices, it necessary to have both a high Al content thick claddings. This leads, however, severe sample bowing even cracking upper layer. In this work, we propose structure strain-compensated AlGaN∕GaN∕InGaN superlattice grown by metal-organic vapor phase epitaxy on bulk GaN substrates. Various thicknesses...
This letter concerns experiments on optically pumped GaN∕AlGaN separate-confinement heterostructure laser structures grown by plasma assisted molecular beam epitaxy. The were along the (112¯0) nonpolar crystallographic direction a bulk GaN substrate. Different widths of quantum wells applied in studied structures. Laser action is clearly demonstrated spontaneous emission saturation, abrupt line narrowing, and strong TE polarization output light. A lasing threshold was reached at an...
HVPE crystallization on ammonothermaly grown GaN crystals (A-GaN) is described. Preparation of the (0001) surface A-GaN to epi-ready state presented. The initial growth conditions are determined and demonstrated. An influence a thickness free carrier concentration in substrate quality mode by examined. Smooth layers excellent crystalline quality, without cracks, with low dislocation density obtained.