The use of conducting liquids with high electrical conductivity, such as eutectic gallium–indium (EGaIn), has great potential in electronics applications requiring stretchability and deformability beyond conventional flexible relying on solid conductors. An advanced liquid metal thin-line patterning process based soft lithography a compatible vertical integration technique are presented that enable size-scalable high-density EGaIn-based, microelectronic components circuits....

In this work, direct electron transfer (DET)-type extended gate field effect transistor (EGFET) enzymatic sensors were developed by employing DET-type or quasi-DET-type enzymes to detect glucose lactate in both 100 mM potassium phosphate buffer and artificial sweat. The system employed either a dehydrogenase oxidase, the latter of which was mutant enzyme with suppressed oxidase activity modified amine-reactive phenazine ethosulfate. These immobilized on electrodes. Changes measured drain current (

Aerosol jet printed 3-D coplanar waveguides up to 50 GHz are demonstrated in this paper for the first time featuring a multilayer aerosol deposition process. The printing utilized is process demonstrate with bi-materials and host substrate independent. provides an insight into fabrication process, technology assessment characterization of polyimide as well nano silver particles. could achieve thickness 60 µm. three-dimensional transmission lines losses 0.5 dB/mm at GHz.

In this paper, aerosol jet printing technology is assessed for D-band RF applications the first time. It describes fabrication process, assessment and characterization of coplanar waveguides (CPW) lines CPW to microstrip transitions on liquid crystal polymer (LCP) in D band using silver nanoparticle process. Feature sizes with a resolution 10 µm, which finest among all digital technologies, were realized successfully. The conductivity sintered structures was half that bulk after sintering at...

We demonstrate large area (25 000 μm2) Al-rich AlGaN-based avalanche photodiodes (APDs) grown on single crystal AlN substrates operating with differential (the difference in photocurrent and dark current) signal gain of 100 at 90 pW (<1 μW cm−2) illumination very low currents <0.1 pA room temperature under ambient light. The high AlGaN APDs is attributed to a breakdown voltage 340 V, corresponding fields ∼9 MV cm−1 as consequence threading screw dislocation densities <...

In this paper, gate resistance thermometry (GRT) was used to determine the channel temperature of AlGaN/GaN high electron-mobility transistors. Raman has been verify GRT by comparing temperatures measured both techniques under various bias conditions. To further validate technique, a thermal finite-element model developed heat dissipation throughout devices. Comparisons show that method averages over width, yielding slightly lower peak than thermography. Overall, provides fast and simple...

We demonstrate Si-implanted AlN with high conductivity (>1 Ω−1 cm−1) and carrier concentration (5 × 1018 cm−3). This was enabled by Si implantation into a low threading dislocation density (TDD) (<103 cm−2), non-equilibrium damage recovery dopant activation annealing process, in situ suppression of self-compensation during the annealing. Low TDD active VAl-nSiAl complexes via defect quasi Fermi level control compensation, while low-temperature, maintained desired shallow donor...

Abstract We report a kV class, low ON-resistance, vertical GaN junction barrier Schottky (JBS) diode with selective-area p-regions formed via Mg implantation followed by high-temperature, ultra-high pressure (UHP) post-implantation activation anneal. The JBS has an ideality factor of 1.03, turn-on voltage 0.75 V, and specific differential ON-resistance 0.6 mΩ·cm 2 . breakdown the is 915 corresponding to maximum electric field 3.3 MV cm −1 These results underline that high-performance can be...

The ultra-wide bandgap of Al-rich AlGaN is expected to support a significantly larger breakdown field compared GaN, but the reported performance thus far has been limited by use foreign substrates. In this Letter, material and electrical properties Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors (HEMT) grown on 2-in. single crystal AlN substrate are investigated, it demonstrated that native substrates unlock potential for sustain large fields in such devices. We further study...

We report on vertical GaN junction barrier Schottky (JBS) diodes formed by Mg ion implantation and ultrahigh -pressure annealing (UHPA). The static ON-state characteristics of the show an ideality factor 1.05, a turn-on voltage ~0.7 V, current rectification ratio <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim 10^{11}$ </tex-math></inline-formula> , low differential specific ON-resistance that scales...

We demonstrate that theoretical breakdown fields can be realized in practically dislocation free Al-rich AlGaN p-n junctions grown on AlN single crystal substrates. Furthermore, we also a leakage current density is independent of the device area, indicating bulk phenomenon and not surface or mesa-edge related. Accordingly, identified Poole–Frenkel emission from two types point-defect traps as primary source reverse before breakdown. Mg-doped exhibited currents due to shallow trap at ∼0.16 eV...

Herein, Al‐rich AlGaN‐based avalanche photodiodes (APDs) grown on single crystal AlN substrates high ultraviolet‐C sensitivity for λ &lt; 200 nm are fabricated, while exhibiting blindness to &gt; 250 nm. A maximum quantum efficiency of 68% and peak gain 320 000 estimated resulting in a figure merit ≈220 devices with ϕ = 100 μm. As expected, decrease increase device size is observed ≈20 400 Overall, two orders magnitude higher performance APDs compared those sapphire.

Near-ideal behavior in Schottky contacts to Si-doped AlN was observed as evidenced by a low ideality factor of 1.5 at room temperature. A temperature-independent barrier height 1.9 eV extracted from temperature-dependent I–V measurements. An activation energy ∼300 meV the series resistance, which corresponded ionization deep Si donor state. Both Ohmic and were stable up 650 °C, with around four orders magnitude rectification this elevated These results demonstrate potential platform for...

We demonstrate a pathway employing crystal polarity controlled asymmetric impurity incorporation in the wide bandgap nitride material system to enable 3D doping control during growth process. The involves specific supersaturation modulated of lateral polar structures alternating Ga- and N-polar GaN domains. A STEM technique integrated differential phase contrast is used image atomic structure different domains their single plane boundaries. As demonstration, 1 μm exhibiting charge balanced...

Abstract We demonstrate controlled Si doping in the low range of 5 × 10 15 –2.5 16 cm −3 with mobility &gt;1000 2 V −1 s GaN films grown by metalorganic chemical vapor deposition. The carbon-related compensation and collapse were prevented controlling electrochemical potential near growth surface via control (CPC) defect quasi-Fermi level (dQFL) point-defect management techniques. While CPC was targeted to reduce net C N concentration, dQFL used fraction atoms compensating configuration,...

This paper studies the influence of surface roughness on performance substrate integrated waveguide (SIW) structures in D-band (110-170 GHz). SIW are fabricated a flexible low-cost/loss organic substrate, liquid crystal polymer (LCP), after polishing material surface. The fabrication realizes minimum feature size 20 μm. average insertion loss polished SIWs is measured to be 0.33dB/mm, showing an 0.35 dB/mm improvement compared with raw without affecting quality impedance match. Based...

A fully integrated system that combines extended gate field-effect transistor (EGFET)-based potentiometric biosensors and electrochemical impedance spectroscopy (EIS)-based has been demonstrated. This configuration enables the sequential measurement of same immunological binding event on sensing surface consequently sheds light fundamental origins signals produced by FET EIS biosensors, as well correlation between two. Detection both bovine serum albumin (BSA)/anti-BSA model in buffer...

In this work, we investigate the effect of different chemical treatments, such as solvents, bases, and acids, on surface properties electrical behavior Schottky diodes fabricated metalorganic vapor deposition-grown, n-type, N-polar GaN. The I–V C–V barrier heights as-grown are found to be 0.40 eV 0.60 eV, respectively, with an ideality factor n = 1.07. It is that solvent treatments neither change nor performance diodes, expected. However, by alkaline photolithography developer acid—the...

III–V/III-nitride p–n junctions were realized via crystal heterogeneous integration, and the resulting diodes characterized to analyze electrical behavior junction quality. p-type In0.53Ga0.47As, which is a well-established base layer in InP heterojunction bipolar transistor (HBT) technology, was used combination with homoepitaxial n-type GaN. The latter offers low dislocation density, coupled high critical electric field saturation velocity, are attractive for use future HBT collector...

This paper presents, for the first time, an integrated microfluidic cooling scheme on multilayer organic liquid crystal polymer (LCP) substrate high power X-band gallium nitride (GaN) devices and amplifiers. The channel is micromachined LCP a mixture of water ethylene glycol used as coolant. A 3D electro-thermal model has been created, which illustrates advantage having micro-channel beneath in case static moving fluid. Measurements were done at 10.5 GHz GaN amplifier (P <sub...

Gallium nitride (GaN) amplifiers are inherently well suited for high power applications, but their increased densities call thermal conductivity (k) substrates, such as copper (Cu) or aluminum (AlN), to provide adequate management. Thus, low-cost/low-k organics, have been traditionally overlooked GaN-based amplifiers. In this paper, an encapsulated package is investigated circumvent the limitations of liquid crystal polymer (LCP), one organic, while leveraging its multilayer and microwave...

The heterogeneous integration of silicon germanium (SiGe) and gallium arsenide (GaAs) technologies is presented using a novel encapsulated packaging approach with organic laminates. combination unique optimally matched interconnects for each die, the low-loss nature substrates, provides wideband performance system design flexibility. A hybrid receiver front-end realized on multilayer Rogers RO3003 to demonstrate this concept, incorporating flip-chip bonded SiGe low-noise amplifier...

The high-power operation of a modular and compact power amplifier (PA) is demonstrated using gallium nitride (GaN) transistors power-combining networks implemented on an aluminum (AlN) substrate. network, tuned for X-Band operation, includes matching circuits Wilkinson dividers (WPDs) with tantalum (TaN) thin-film resistors. PA efficiency increased by minimizing network thermal loss the AlN substrate, which excellent conductor. All system components were mounted metal carrier, interconnected...

Gallium nitride (GaN) technology has emerged as a frontrunner for high power electronics applications. By performing survey of wire-bond and flip-chip-packaged GaN HEMTs on either AlN (a ceramic with thermal conductivity) or LCP (an organic polymer low conductivity), the electrical limits each package are established. Flip-chip packaging benefit improving bandwidth hybrid PA. Dies that were wire-bonded showed best performance, able to dissipate more than 6 W while remaining below maximum...