A5041393022- Diamond and Carbon-based Materials Research
- Semiconductor materials and devices
- Advanced Surface Polishing Techniques
- Advanced materials and composites
- Force Microscopy Techniques and Applications
- Metal and Thin Film Mechanics
- Ion-surface interactions and analysis
- Silicon and Solar Cell Technologies
- Laser Material Processing Techniques
- Semiconductor materials and interfaces
- ZnO doping and properties
- Metal Alloys Wear and Properties
- Surface Modification and Superhydrophobicity
- Aluminum Alloys Composites Properties
- Electronic and Structural Properties of Oxides
- Inorganic Fluorides and Related Compounds
- Carbon Dioxide Capture Technologies
- Copper-based nanomaterials and applications
- Advanced ceramic materials synthesis
- X-ray Spectroscopy and Fluorescence Analysis
- Nanowire Synthesis and Applications
- Polymer Nanocomposites and Properties
- Acoustic Wave Resonator Technologies
- Phase Equilibria and Thermodynamics
- Fusion materials and technologies
Atlântica Instituto Universitário
2019-2022
Instituto de Engenharia de Sistemas e Computadores Investigação e Desenvolvimento
2015-2022
University of Lisbon
2013-2022
Universidade do Estado de Santa Catarina
2020
Instituto Politécnico de Lisboa
2010-2019
TARH (Portugal)
2011
Instituto Superior Técnico
2010
Universidade Estadual Paulista (Unesp)
2010
Massachusetts Institute of Technology
2003
We present a detailed study of the structural characteristics molecular beam epitaxy grown nonpolar InN films with a- and m-plane surface orientations on r-plane sapphire (100) γ-LiAlO2, respectively, semipolar (101¯1) sapphire. The on-axis rocking curve (RC) widths were found to exhibit anisotropic dependence azimuth angle minima at [0001] for a-plane films, maxima films. different contributions RC broadening are analyzed discussed. finite size crystallites extended defects suggested be...
Abstract Conjugated polymers have been subject of great interest in the recent literature from both fundamental point view and applied science perspective. Among several types conjugated used investigations, polythiophene its derivatives attracted considerable attention over past 20 years due to their high mobility other remarkable solid‐state properties. They potential applications many fields, such as microelectronic devices, catalysts, organic field‐effect transistors, chemical sensors,...
Abstract Comprehensive and systematic study challenging the application of Vegard’s rule to germanium tin solid solutions grown on buffer layers 100 silicon substrates is presented. The binary’s lattice parameters, composition respective uncertainties are determined through x-ray diffraction via reciprocal space mapping technique employing newly developed software. content confirmed by Rutherford backscattering spectrometry energy dispersive spectroscopy. statistical agreement between...
In this work, Langmuir films of two highly fluorinated fatty alcohols, CF3(CF2)12CH2OH (F14OH) and CF3(CF2)16CH2OH (F18OH), were studied. Atomic Force Microscopy (AFM) images the transferred at zero surface pressure low density onto silicon wafers by Langmuir-Blodgett technique revealed, for first time, existence solid-like domains with well-defined mostly hexagonal (starry) shapes in case F18OH, an entangled structure threads F14OH. A (20:80) molar mixture alcohols displayed a surprising...
In the present work, we a study of effect Fe(+) ion implantation on tribological response at nanoscale contact lengths crystalline silicon (c-Si) surfaces. (1 0 0) wafers were implanted with fluence 2 × 10(17) cm(-2), followed by annealing treatments temperatures 800 °C and 1000 °C. After microstructural characterization, nanoabrasive wear tests performed an atomic force microscope (AFM) using AFM diamond tip stiff steel cantilever that enables application loads between 1 μN 8 μN. nanowear...
Very high fluence implantation of 14N+ ions was used to promote the formation a nitride layer on surface steel coinage dies by Portuguese Mint. Die samples were studied before and after at 90 keV plus 30 for two nominal fluences, 5.0 × 1017 at/cm2 1.0 1018 at/cm2, temperatures, room liquid nitrogen temperature. Surface characterization carried out ultramicrohardness indentation, Atomic Force Microscopy (AFM), Rutherford Backscattering Spectrometry (RBS). A significant increase (factor two)...
Aiming to improve the nanotribological response of Si-based materials we implanted silicon wafers with different fluences iron ions (up 2x10 17 cm -2 ). Implantation was followed by annealing treatments at temperatures from 550°C 1000°C. The surfaces were analyzed scanning electron microscopy (SEM), X-ray diffraction (XRD), atomic force (AFM) and wettability tests. Then, samples submitted AFM-based nanowear We observe an increase both hidrophobicity wear resistance silicon, indicating that...
Journal Article Single and dual ion implantation of c:Si with Fe+ C+: microstructural characterization Get access B Nunes, Nunes Departamento de BioEngenharia Centro Química Estrutural, Instituto Superior Técnico, University Lisbon, Av. Rovisco Pais, 1049-001 Lisboa, PORTUGAL Email: bruno.nunes@ist.utl.pt Search for other works by this author on: Oxford Academic Google Scholar E Alves, Alves Campus Tecnológico e Nuclear, IPFN, EN10, 2695-066 Bobadela LRS, R Colaço Microscopy Microanalysis,...
Lightly doped drain (LDD) ion implants were used to adjust the barrier height of TiSi/sub 2/ and PtSi, n-type Schottky diodes. Thus, low turn-on, leakage diodes produced with no extra cost an existing BiCMOS process. To help predict performance characteristics these diodes, a closed form analytical model was derived for determining effective one dimensional diode shallow p/sup +/ surface layer. Finally, process device simulations utilized provide physical insight into diodes' characteristics.