A5016039971- Semiconductor materials and devices
- Ion-surface interactions and analysis
- Metal and Thin Film Mechanics
- X-ray Spectroscopy and Fluorescence Analysis
- Electron and X-Ray Spectroscopy Techniques
- ZnO doping and properties
- Nuclear Physics and Applications
- Semiconductor materials and interfaces
- Integrated Circuits and Semiconductor Failure Analysis
- GaN-based semiconductor devices and materials
- Magnetic properties of thin films
- Fusion materials and technologies
- Silicon and Solar Cell Technologies
- Nuclear Materials and Properties
- Silicon Nanostructures and Photoluminescence
- Thin-Film Transistor Technologies
- Nuclear reactor physics and engineering
- Ga2O3 and related materials
- Gold and Silver Nanoparticles Synthesis and Applications
- Chalcogenide Semiconductor Thin Films
- Magnetic confinement fusion research
- Copper-based nanomaterials and applications
- Diamond and Carbon-based Materials Research
- Copper Interconnects and Reliability
- Gas Sensing Nanomaterials and Sensors
University of Lisbon
2015-2024
Instituto de Engenharia de Sistemas e Computadores Investigação e Desenvolvimento
2013-2024
Instituto Politécnico de Lisboa
2011-2023
International Atomic Energy Agency
2018-2023
Instituto Superior Técnico
2011-2021
TARH (Portugal)
2006-2020
Culham Science Centre
2011-2016
National Institute of Engineering, Technology and Innovation
1994-2014
National Sun Yat-sen University
2011
Cornell University
2011
The combinatorial optimization simulated annealing algorithm is applied to the analysis of Rutherford backscattering data. fully automatic, i.e., it does not require time-consuming human intervention. tested on a complex iron-cobalt silicide spectrum, and all relevant features are successfully determined. total time using PC 486 processor running at 100 MHz comparable data collection time, which opens way for on-line automatic analysis.
Ion beam analysis (IBA) is a cluster of techniques including Rutherford and non-Rutherford backscattering spectrometry particle-induced X-ray emission (PIXE). Recently, the ability to treat multiple IBA (including PIXE) self-consistently has been demonstrated. The utility for accurately depth profiling thin films critically reviewed. As an important example IBA, three laboratories have independently measured silicon sample implanted with fluence nominally 5 × 10(15) As/cm(2) at unprecedented...
Following the IAEA Technical Meeting on 'Advanced Methodologies for Analysis of Materials in Energy Applications Using Ion Beam Accelerators', this paper reviews current status ion beam analysis (IBA) techniques and some aspects ion-induced radiation damage materials field relevant to fusion. Available facilities, apparatus development, future research options challenges are presented discussed. The beryllium radioactivity-containing samples from experiments JET or ITER represents not only...
Rutherford backscattering spectrometry (RBS) and related techniques have long been used to determine the elemental depth profiles in films a few nanometres microns thick. However, although obtaining spectra is very easy, solving inverse problem of extracting from not possible analytically except for special cases. It because these cases include important classes samples, skilled analysts are adept at useful qualitative information data, that ion beam analysis still an technique.
Nanocomposites consisting of a dielectric matrix, such as TiO2, with embedded noble metal nanoparticles (NPs) possess specific optical properties due to the surface plasmon resonance (SPR) effect, interesting for several applications. The aim this work is demonstrate that these are sensitive nanostructure magnetron-sputtered TiO2/Au thin films, which can be tuned by annealing. We study role shape and size distribution NPs, well influence crystallinity phase composition host matrix on...
Post-mortem studies with ion beam analysis, thermal desorption, and secondary mass spectrometry have been applied for investigating the long-term fuel retention in JET ITER-like wall components. The takes place via implantation co-deposition, highest values were found to correlate thickness of deposited impurity layers. From total amount retained D over half was detected divertor region. majority is on top surface inner divertor, whereas least measured main chamber mid-plane limiter....
Post mortem analyses of JET ITER-Like-Wall tiles and passive diagnostics have been completed after each the first two campaigns (ILW-1 ILW-2). They show that global fuel inventory is still dominated by co-deposition; hence plasma parameters sputtering processes affecting material migration influence distribution retained fuel. In particular, differences between results from may be attributed to a greater proportion pulses run with strike points in divertor corners, having about 300...
The work presented draws on new analysis of components removed following the second JET ITER-like wall campaign 2013–14 concentrating upper inner divertor, and outer divertor corners, lifetime issues relating to tungsten coatings carbon fibre composite tiles dust/particulate generation. results show that remains region highest deposition in JET-ILW. Variations plasma configurations between first have altered material migration corners divertor. Net is shown be beneficial sense it reduces W...
A study of the combined effect CoFeB free layer thickness, shape anisotropy, and annealing temperature on transfer curves MgO based magnetic tunnel junctions is presented. The response changes gradually as its thickness decreases shows hysteresis-free for CoFeB⩽15.5Å. For with CoFeB=15.5Å, onset depends junction area temperature. Linearized dimensions down to 1.5×3μm2 sensitivity high 7.7%∕Oe were achieved.
We investigate interactions between Mott-Wannier (MW) and Frenkel excitons in a family of hybrid structures consisting thin organic (polyfluorene) films placed close proximity (systematically adjusted by GaN cap layer thickness) to single inorganic $[(\mathrm{Ga},\mathrm{In})\mathrm{N}∕\mathrm{Ga}\mathrm{N}]$ quantum wells (QWs). Characterization the QW using Rutherford backscattering spectrometry atomic force microscopy allows direct measurement thickness morphology layers. Time-resolved...
Thermoelectric transparent ZnO:Sb thin films were deposited by magnetron sputtering, with Sb content varying between 2 and 14 at%. As evidenced X-ray diffraction analysis, the crystallize in ZnO wurtzite structure for lower levels of Sb-doping, developing a degree amorphization higher Sb-doping. Temperature-dependent (10–300 K) absorption spectroscopy studies produced performed at Zn K-edges to shed light on influence doping local atomic disorder films. The analysis K-edge EXAFS spectra...
Bottom-pinned Mn83Ir17 spin valves with enhanced specular scattering were fabricated, showing magnetoresistance (MR) values up to 13.6%, lower sheet resistance R□ and higher ΔR□. Two nano-oxide layers (NOL) are grown on both sides of the CoFe/Cu/CoFe valve structure by natural oxidation or remote plasma starting CoFe layer. Maximum MR enhancement is obtained after just 1 min oxidation. Rutherford backscattering analysis shows that a 15±2 Å oxide layer grows at expense initial (prior...