A5041213571- Ion-surface interactions and analysis
- Silicon and Solar Cell Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Electron and X-Ray Spectroscopy Techniques
- Silicon Nanostructures and Photoluminescence
- X-ray Spectroscopy and Fluorescence Analysis
- Thin-Film Transistor Technologies
- Nuclear Physics and Applications
- Glass properties and applications
- Nuclear materials and radiation effects
- Muon and positron interactions and applications
- Silicon Carbide Semiconductor Technologies
- Ga2O3 and related materials
- Advanced Semiconductor Detectors and Materials
- Advancements in Battery Materials
- Crystallography and Radiation Phenomena
- Fusion materials and technologies
- Metal and Thin Film Mechanics
- Intermetallics and Advanced Alloy Properties
- X-ray Diffraction in Crystallography
- Advanced Materials Characterization Techniques
- Advanced Surface Polishing Techniques
- Medical Imaging Techniques and Applications
Institute for Particle and Nuclear Physics
2006-2024
HUN-REN Wigner Research Centre for Physics
2014-2024
Hungarian Academy of Sciences
1997-2018
Institute for Technical Physics and Materials Science
1981-1994
Central Research Institute
1977-1986
Institute for Physics
1977-1986
Conventional Rutherford backscattering spectrometry (RBS) in combination with Monte Carlo simulations performed on 3D model cells allow the self-consistent determination of shape, size, and atomic composition silica particles as structures, submicron scale. Spherical ellipsoidal particle shapes spatial distribution implanted Ar Xe unmasked zones underlying substrate is investigated. We demonstrate that both lateral depth information for ordered nano-objects can be derived from multiple RBS...
The influence of crystallographic orientation and ion fluence on the shape damage distributions induced by 500keV N+ implantation at room temperature into 6H-SiC is investigated. irradiation was performed different tilt angles between 0° 4° with respect to ⟨0001⟩ axis in order consider whole range beam alignment from channeling random conditions. applied 2.5×1014–3×1015cm−2. A special analytical method, 3.55MeV He+4 backscattering analysis combination technique (BS∕C), employed measure...
GdSi2 was prepared under ultrahigh vacuum conditions. Prior to processing, a clean interface produced using diluted HF dipping. It is pointed out that the ‘‘critical temperature’’ for formation published earlier probably an artifact and correlation between native oxide critical temperature established.