A5058473044- Ion-surface interactions and analysis
- Silicon and Solar Cell Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Carbon Nanotubes in Composites
- Silicon Nanostructures and Photoluminescence
- Force Microscopy Techniques and Applications
- Graphene research and applications
- Electron and X-Ray Spectroscopy Techniques
- Advanced Materials Characterization Techniques
- Diamond and Carbon-based Materials Research
- Metal and Thin Film Mechanics
- Intermetallics and Advanced Alloy Properties
- Advanced Surface Polishing Techniques
- Surface and Thin Film Phenomena
- Nuclear Physics and Applications
- Mechanical and Optical Resonators
- Semiconductor Quantum Structures and Devices
- Spectroscopy Techniques in Biomedical and Chemical Research
- X-ray Spectroscopy and Fluorescence Analysis
- Advanced Semiconductor Detectors and Materials
- Copper Interconnects and Reliability
- Silicon Carbide Semiconductor Technologies
HUN-REN Centre for Energy Research
2018-2022
Hungarian Academy of Sciences
2002-2018
77 Elektronika (Hungary)
2016
Institute for Technical Physics and Materials Science
2002-2012
HUN-REN Research Centre for Natural Sciences
2012
Osaka University
2005-2006
Fraunhofer Institute for Integrated Circuits
1991-2003
Energy Institute
2003
Schott (Germany)
1994-1999
Eötvös Loránd University
1992-1994
Amorphization by ion beam irradiation of multilayered samples Al/Pt, Al/Pd, and Al/Ni has been investigated selected area diffraction Rutherford backscattering. With a dose 2×1014 Xe ions/cm2, uniform mixing is achieved in the Al/Pt system amorphous phase produced over large composition range. In Al/Pd systems, phases or equilibrium, crystalline are formed depending on films. The same results were found when annealed to form before bombardment. For thin films these fcc metals, only simplest...
Silicide formation with Ti deposited on single crystal Si and amorphous layers sequentially without breaking the vacuum was investigated using backscattering spectrometry glancing-angle x-ray diffraction. For Si, TiSi2 formed a rate proportional to (time)1/2 an activation energy of 1.8±0.1 eV. reaction slower silicide layer nonuniform in thickness. We attribute difference behavior presences interfacial impurities case where Si.
Although Au–Ge has often been used in making Ohmic contacts to GaAs, the alloying behavior of this system not well characterized and understood. In paper Au layers on GaAs was investigated as a function processing temperature (400–600°C) time by backscattering channeling-effect measurements with 2-MeV 4He ions. Scanning electron microscopy current-voltage evaluations were also made. Similarities are found both systems: There is deeply penetrating component into that remains essentially...
Backscattering of MeV 4He ions has been used to analyze the Ga and As content in SiO2 Si3N4 dielectric layers deposited on single-crystal GaAs substrates. Changes impurity concentrations distributions are seen after isothermal annealing at both 750 800°C. Evidence for outdiffusion is clear.
We demonstrate that the crystalline quality of Si layers grown on sapphire substrate (SOS) by CVD method can be greatly improved through use implantation ions and subsequent thermal annealing at relatively low temperatures (∼550 °C). This utilizes an amorphous layer created ion near sapphire/Si interface. Subsequent regrowth this starting from perfect surface region leads to a much layer, as evidenced MeV 4He+ channeling TEM measurements. When implantation-formed is located outer portion...
The mechanisms of He bubble and, after annealing, void formation have been investigated for single and multiple ${\mathrm{He}}^{+}$ implants in Si. Several analytical techniques adopted: photoluminescence (PL), Rutherford backscattering protons, transmission electron microscopy, atomic force microscopy. When a second implant is performed systematic enlargement the band reveals importance interaction between atoms point defects generated during irradiation. Size effects implanted region...
Multiwall carbon nanotubes (MWCNTs) dispersed on graphite highly oriented pyrolytic (HOPG) substrate were irradiated with ${\mathrm{Ar}}^{+}$ ions of $30\phantom{\rule{0.3em}{0ex}}\mathrm{keV}$. The samples investigated by scanning tunneling microscopy (STM) and spectroscopy (STS) in air. irradiation-induced defects appear as hillocklike protrusions the nanotube walls, similar to hillocks observed earlier ion HOPG. results are agreement recent predictions, which attribute STM features...
Thin-film reactions of Al/Ti and Al/W with 3 at. % Cu in Al were investigated by glancing-angle x-ray diffraction Rutherford backscattering for vacuum annealing the temperature range 300–500 °C. In system, intermetallic phase Al3Ti grows as (time)1/2. The presence retards growth rate an order magnitude at 400 °C increases activation energy from 1.8±0.1 to 2.4±0.1 eV. penetration W into Al.
Several-parameter fitting of multiple-angle-of-incidence ellipsometry data is developed to characterize near-surface layers on semiconductors damaged by implantation. The damage depth profiles were described either rectangular, trapezoid-type, or coupled half-Gaussian (realistic) optical models. rectangular model has three parameters: the average level and effective thickness implanted layer, plus native oxide. trapezoid-type enhanced with a fourth parameter, width back (a/c) interface....
MeV 4He+ channeling effect measurements combined with transmission electron microscopy (TEM) and Hall were employed to study the orientation dependence of amount damage remaining after anneal 200−keV As−implanted Si. The residual disorder high−temperature annealing was found depend upon crystal orientation. For 〈111〉−oriented Si, anomalously high in dose region 1015/cm2 by both TEM measurements. Significantly less 〈100〉− 〈110〉−oriented latter exhibiting essentially no disorder. electrical...
Composition and density of silicon nitride layers deposited on by the NH3–SiH4 reaction at 850°C were measured as a function components. Backscattering channeling-effect measurements with MeV 4He ions used to determine depth dependence concentration ratio nitrogen density. The compositions stoichiometric densities approximately 3.0 g/cm3 for NH3/SiH4 deposition ratios greater than 10. For lower ratios, decreased that increased. variation follows in physical electrical properties layers.
Backscattering and channeling effect measurements with MeV 4He ions were used to determine the depth dependence of composition amorphous silicon nitride layers on single-crystal silicon. The was stoichiometric over entire layer for high ratios NH3 SiH4 in deposition reaction at 850°C. For lower ratios, a excess found, extreme cases, located predominantly near interface.
Polysilicon layers with thicknesses between 8 and 600 nm deposited by low-pressure chemical vapor deposition at temperatures ranging from 560 to 640 °C were characterized spectroscopic ellipsometry (SE) determine the layer compositions using multilayer optical models Bruggeman effective-medium approximation. The dependence of structural parameters on thickness temperature have been investigated. A better characterization polysilicon is achieved reference data fine-grained in model. amount...
Computer simulation by numerically solving the time-dependent Schr\"odinger equation was used to investigate image formation during scanning tunneling microscope (STM) imaging of three-dimensional objects with radii curvature comparable that STM tip. The results were compared experiment. When nanotube is placed on a substrate similar electronic structure, only distortion arises from geometric convolution. and have different structures, additional distortions arise. time evolution process...
Abstract Outdiffusion, lattice location and electrical behavior of Zn, Cd, Hg Se, Te implanted into silicon at 50 keV were investigated by backscattering channeling effect 1 MeV He+ ions Hall sheet resistivity measurements. All the species exhibited outdiffusion with thermal processing. A significant fraction Cd Hg, when a substrate 350°C, occupied regular interstitial sites, while 50–60 per cent Se atoms on substitutional sites. Selenium room temperature mercury 350°C depth dependent...