A5061152758- Ion-surface interactions and analysis
- Silicon and Solar Cell Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Fusion materials and technologies
- Silicon Carbide Semiconductor Technologies
- Silicon Nanostructures and Photoluminescence
- Nuclear Materials and Properties
- Thin-Film Transistor Technologies
- Metal and Thin Film Mechanics
- Chalcogenide Semiconductor Thin Films
- Microstructure and mechanical properties
- Quantum Dots Synthesis And Properties
- X-ray Spectroscopy and Fluorescence Analysis
- Diamond and Carbon-based Materials Research
- Quantum and electron transport phenomena
- Electron and X-Ray Spectroscopy Techniques
- Advancements in Semiconductor Devices and Circuit Design
- Advanced ceramic materials synthesis
- nanoparticles nucleation surface interactions
- Hydrogen embrittlement and corrosion behaviors in metals
- Electronic and Structural Properties of Oxides
- Advanced Chemical Physics Studies
- 2D Materials and Applications
Helmholtz-Zentrum Dresden-Rossendorf
2015-2024
Ion Beam Applications (France)
2007
FZI Research Center for Information Technology
2003
IBM (United States)
1997
Fujitsu (Japan)
1997
Deggendorf Institute of Technology
1986-1991
HUN-REN Institute for Nuclear Research
1989
TU Dresden
1980-1986
Atomic-scale computer simulations, both molecular dynamics (MD) and the nudged-elastic band methods, have been applied to investigate long-range migration of point defects in cubic SiC (3C-SiC) over temperature range from $0.36{T}_{\mathrm{m}}\phantom{\rule{0.2em}{0ex}}$ $0.95{T}_{\mathrm{m}}$ (melting temperature). The defect diffusivities, activation energies, correlation factors obtained. Stable C split interstitials can migrate via first- or second-nearest-neighbor sites, but relative...
Abstract The formalism for the binary collision code Crystal-TRIM which simulates ion implantation effects in crystalline solids is presented. treatment of collisions, kinematics and crystal description are elucidated detail. nuclear scattering described by 'universal' potential. angles calculated semianalytical analytical formulae. We employ a semiempirical model to describe electronic stopping ions. Thermal vibrations lattice atoms, radiation-induced production vacancies interstitials...
We demonstrate that the third elemental group-IV semiconductor, germanium, exhibits superconductivity at ambient pressure. Using advanced doping and annealing techniques of state-of-the-art semiconductor processing, we have fabricated a highly Ga-doped Ge (GeratioGa) layer in near-intrinsic Ge. Depending on detailed conditions, can be generated tailored doped semiconducting host temperatures as high 0.5 K. Critical-field measurements reveal quasi-two-dimensional character approximately 60 nm...
Large-scale ab initio molecular dynamics simulations of ion-solid interactions in SiC reveal that significant charge transfer occurs between atoms, and defects can enhance to surrounding atoms. The results demonstrate from recoiling atoms alter the energy barriers for stable defect formation. present illustrate detail dynamic processes charged averaged values displacement threshold energies along four main crystallographic directions are smaller than those determined by empirical potentials...
Diffusion experiments with indium (In) in germanium (Ge) were performed the temperature range between 550 and 900 °C. Intrinsic extrinsic doping levels achieved by utilizing various implantation doses. Indium concentration profiles recorded means of secondary ion mass spectrometry spreading resistance profiling. The observed independent diffusion are accurately described based on vacancy mechanism a singly negatively charged mobile In-vacancy complex. In accord experiment, model predicts an...
Amorphous Ge and its recrystallization are investigated by molecular-dynamics simulations using a Stillinger-Weber-type interatomic potential. Unlike previously used parametrizations of this potential the parameter set employed in work yields reasonable description all condensed phases Ge. The preparation amorphous is performed cooling from molten state. Structural thermal properties phase such as pair correlation function, atomic density, well melting temperature calculated good agreement...
Chalcogen-hyperdoped silicon shows potential applications in silicon-based infrared photodetectors and intermediate band solar cells. Due to the low solid solubility limits of chalcogen elements silicon, these materials were previously realized by femtosecond or nanosecond laser annealing implanted bare certain background gases. The high energy density deposited on surface leads a liquid phase fast recrystallization velocity allows trapping into matrix. However, this method encounters...
Spin-polarized first-principles calculations were carried out to explore whether B, Si, and Ge-doped SMoSe Janus layers can be used as potential catalysts in the hydrogen evolution reaction.
Shallow n+ layers in Ge are formed by phosphorus implantation and subsequent millisecond flash lamp annealing. Present investigations focused on the dependence of P redistribution, diffusion electrical activation heat input into sample duration. In contrast to conventional annealing procedures an up 6.5×1019 cm−3 is achieved without any dopant redistribution noticeable diffusion. results suggest that independently pretreatment maximum should be obtained at a energy corresponds onset The...
We report experiments on the impact of 2.5 MeV proton irradiation self-diffusion and dopant diffusion in germanium (Ge). Self-diffusion under reveals an unusual depth independent broadening Ge isotope multilayer structure. This behavior observed enhanced B retarded P demonstrates that interstitial-mediated process dominates irradiation. fundamental finding opens up unique ways to suppress vacancy-mediated solve donor deactivation problem hinders fabrication Ge-based nanoelectronic devices.
Abstract Silicon chips containing arrays of single dopant atoms can be the material choice for classical and quantum devices that exploit donor spins. For example, group‐V donors implanted in isotopically purified 28 Si crystals are attractive large‐scale computers. Useful attributes include long nuclear electron spin lifetimes 31 P, hyperfine clock transitions 209 Bi or electrically controllable 123 Sb Promising architectures require ability to fabricate individual near‐surface with high...
We report proton radiation enhanced self-diffusion (RESD) studies on Si-isotope heterostructures. Self-diffusion experiments under irradiation were performed at temperatures between $780\text{ }\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}$ and $872\text{ for various times fluxes. Detailed modeling of RESD provides direct evidence that vacancies high diffuse with a migration enthalpy ${H}_{V}^{\mathrm{m}}=(1.8\ifmmode\pm\else\textpm\fi{}0.5)\text{ }\text{ }\mathrm{e}\mathrm{V}$ significantly...
The electronic, thermodynamic, and optical properties of a new type two-dimensional Janus layer (JL) consisting exclusively chalcogens are investigated using first-principles calculations. permutations on atomic sites provide increased stability due to the multi-valency chalcogens, heavier central atom further stabilizes coordination number. JLs indirect bandgap materials with larger than 1.23 eV, making them suitable for photocatalytic activity. Different feasible chemical potentials...
A critical review is given on phenomenological models of damage accumulation used in binary collision (BC) computer simulations the dose dependence shape as‐implanted profiles and interdependence channeling buildup. The statistical approach, which assumes amorphous pockets, found to be most realistic model for doses below amorphization threshold. dynamic simulation formation layers described by an improved model. If within a certain depth interval density pockets exceeds value, abrupt...
The migration of point defects in silicon and the corresponding atomic mobility are investigated by comprehensive classical molecular-dynamics simulations using Stillinger-Weber potential Tersoff potential. In contrast to most previous studies both defect diffusivity self-diffusion coefficient per calculated separately so that diffusion-correlation factor can be determined. Simulations with show vacancy is characterized transformation tetrahedral split vice versa ${f}_{V}$ about 0.5. This...
Heavily p-type doped Ge layers were fabricated by 100 keV Ga implantation and subsequent flash lamp annealing for 3 ms in the temperature range between 700 900 °C. For comparison, some samples annealed a rapid thermal processor 60 s. fluences of 2×1015, 6×1015, 2×1016 cm−2 chosen order to achieve peak concentrations ranging from values slightly below equilibrium solid solubility limit 4.9×1020 cm−3 up 3.5×1021 which corresponds maximum content about 8 at. %. The structure layer distribution...
Phosphorus implantation (30 keV, 3×1015 cm−2) into preamorphized Ge and subsequent rapid thermal or flash lamp annealing is investigated. During a significant P diffusion in amorphous not observed. However, the fast solid phase epitaxial regrowth causes redistribution of P. After completion at temperatures above 500 °C, concentration-dependent crystalline takes place leads to considerable loss toward surface. An appreciable influence defects on coefficient detected. For 60 s 600 °C for 20 ms...
Modeling of nanostructure evolution in solids requires comprehensive data on the properties defects such as vacancy and foreign atoms. Since most processes occur at elevated temperatures, not only energetics ground state, but also their temperature-dependent free energies must be known. The first-principles calculation contributions phonon electron excitations to formation, binding, migration is illustrated case bcc Fe. First all, ground-state vacancy, atoms Cu, Y, Ti, Cr, Mn, Ni, V, Mo, Si,...
A comprehensive study on the migration of di- and tri-interstitials in silicon is performed using classical molecular dynamics simulations with Stillinger-Weber potential. At first structure energetics tri-interstitial are investigated, accuracy interatomic potential tested by comparing results literature data obtained tight-binding density-functional-theory calculations. Then investigated for temperatures between 800 1600 K. Very long simulation times, large computational cells different...
Channeling implantation of Ga into Ge is performed at two very different ion fluxes (1012 and 1019cm−2s−1), temperatures (room temperature 250°C), five fluences. The fluence dependence the range profiles damage strongly influenced by defect accumulation dynamic annealing. At 250°C, maximum lifetime defects less than 10s. On other hand, room no significant annealing found within first 10s after impact. measured depth are reproduced well atomistic computer simulations.