Introduction (C. Claeys, E. Simoen). Chapter 1. Germanium Materials (B. Depuyt et al.). 2. Grown-in Defects in Ge (J. Vanhellemont 3. Diffusion and Solubility of Dopants (E. Simoen, C. Claeys). 4. Oxygen Silicon (P. Clauws). 5. Metals 6. Ab-initio Modelling (R. Jones, J. Coutinho). 7. Radiation Performance Technologies (V. Markevich 8. Electrical Devices (M. Houssa 9. Device Modeling (D. Esseni 10. Nanoscale MOS Dielectrics Junctions On Chui, K.C. Saraswat). 11. Advanced 12. Alternative...

The similarity between Random Telegraph Noise and Negative Bias Temperature Instability (NBTI) relaxation is further demonstrated by the observation of exponentially-distributed threshold voltage shifts corresponding to single-carrier discharges in NBTI transients deeply scaled pFETs. A SPICE-based simplified channel percolation model devised confirm this behavior. overall device-to-device ΔV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...

The aim of this review paper is to describe in a comprehensive manner the current understanding radiation response state-of-the-art Silicon-on-Insulator (SOI) and FinFET CMOS technologies. Total Ionizing Dose (TID) response, heavy-ion microdose effects single-event (SEEs) will be discussed. It shown that very high TID tolerance can achieved by narrow-fin SOI architectures, while bulk FinFETs may exhibit similar planar devices. Due vertical nature FinFETs, specific obtained, whereby angle...

This paper presents the low-frequency noise (LFN) behavior of vertical tunnel FETs (TFETs). The experimental input characteristics with different source compositions (Si and Ge) HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> thicknesses in gate-stack (2 3 nm) are presented. A brief analog parameters analysis, including transconductance, output conductance, intrinsic voltage gain under bias conditions, shows that TFETs promising for...

Thin-film organic near-infrared (NIR) photodiodes can be essential building blocks in the rapidly emerging fields including internet of things and wearable electronics. However, demonstration NIR with not only high responsivity but also low dark current density that is comparable to inorganic photodiodes, for example, below 1 nA cm–2 silicon remains a challenge. In this work, we have demonstrated non-fullerene acceptor-based an ultralow 0.2 at −2 V by innovating on charge transport layers...

A simple-man's model for the random telegraph signal (RTS) noise amplitude in a submicrometer MOSFET is presented. It shown that channel resistance modulation specific trap can be expressed as product of normalized scattering cross section and fractional conductivity change. The qualitatively describes experimental temperature drain current dependence RTS allows evaluation influence location nature on wide scatter values observed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML"...

We have investigated diffusion and activation of boron implanted with 6 keV energy to a maximum concentration 8.0×1020atoms∕cm3 in crystalline germanium (c-germanium) preamorphized germanium, employing rapid thermal annealing the range 400–600 °C. As-implanted profiles are shallower than ones c-germanium due channeling suppression. While is not observed either or during regrowth from amorphous state, level achieved two starting phases significantly different. A 2.4×1020atoms∕cm3 has been...

The diffusion of self-atoms and $n$-type dopants such as phosphorus, arsenic, antimony in germanium was studied by means isotopically controlled multilayer structures doped with carbon. profiles reveal an aggregation the within carbon-doped layers a retarded penetration depth compared to dopant high-purity natural Ge. Dopant retardation are strongest for Sb similar P As. In addition, shape changes concentrations range ${10}^{20}\text{ }{\text{cm}}^{\ensuremath{-}3}$ mainly due formation...

In this paper, we investigate the quality of MOSFET gate stacks where high- <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">k</i> materials are implemented as dielectrics. We evaluate both drain- and gate-current noises in order to obtain information about defect content stack. analyze how overall stack depends on kind material, interfacial layer thickness, electrode strain engineering, substrate type. This comprehensive study allows us understand...

Broad similarity between negative bias temperature instability (NBTI) relaxation and 1/f noise is observed. Individual transitions in NBTI small pFETs are observed Poisson defect number statistics inferred. Finally, it argued that the wide distribution of times should be considered addition to variation devices.

The aim of this review paper is to describe the impact so-called border traps (BTs) in high- k gate oxides on operation and reliability high-mobility channel transistors. First, a brief summary physics BTs will be given, describing charge trapping release terms elastic tunneling model. It also pointed out how information BT properties can extracted from popular measurement techniques such as low-frequency (1/f) noise variable-frequency pumping. In next two parts, metal-oxide-semiconductor...

This paper presents, for the first time, experimental comparison between p-type trigate FinFET and p-TFET analog performances devices fabricated on same wafer. A careful analysis of electrical characteristics is performed to choose best bias conditions these devices. higher intrinsic voltage gain obtained because their better output conductance, which more than four orders magnitude one p-FinFET transistors at from room temperature up 150 <formula formulatype="inline"...

We report on Al(Ga,In)N HEMTs, MISHEMTs and MOSFETs integrated 200 mm Si wafers using Au-free processing in standard CMOS tools, discuss the performance tradeoffs, limitations solutions. The main highlights of process optimization include low RF transmission loss (0.15 dB/mm at 20 GHz), state-of-the-art contact resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C</sub> ) 0.14 Ω for a non-Au, thermal budget (<; 600 °C) scheme high...

In this paper, evidence will be provided for the existence of a new class floating body effects, occurring in SOI and bulk MOSFETs linear operation regime called here kink effects (LKEs). It shown that sufficiently large front-gate voltage V/sub G/, transconductance g/sub m/ exhibits second peak, both n- p-channel devices. The effect is most pronounced partially depleted (PD) n-MOSFETs or at cryogenic temperatures. occurs as well fully (FD) transistors, with back-gate preferably biased into...

The low-frequency noise has been studied in nMOSFETs with an HfO/sub 2/--SiO/sub 2/ gate stack, for different thickness of the SiO/sub interfacial layer (IL). It is observed that 1/f-like linear operation, about 50 times higher devices a 0.8-nm chemical oxide IL, compared 4.5-nm thermal reference n-channel transistors. This shown to relate correspondingly trap density dielectric material. In addition, it demonstrated rapidly reduces increasing IL. From results 2.1-nm derived at certain...

We have studied doping profiles, activation levels, and defect annealing of P introduced in Ge by ion implantation at different doses energy, annealed under various conditions rapid thermal annealing. Common to all implant energies, ion-implanted exhibits a “box profile” high doses, when sufficiently budget is applied—similarly the concentration-dependent diffusion from high-concentration solid source. Upon proper conditions, active concentration limited (5–6)×1019at.∕cm3, implying 50% level...

Material and lattice defect properties of silicon germanium relevant for device processing are discussed compared with respect to their impact on crystal pulling, processing, diode leakage current. It is shown that both semiconductors very similar when comparing material at the same temperature normalized melt . In other respects, however, like diffusion dopants, Ge behaves quite differently. With leakage, more sensitive metal contamination than operation temperature.

Time evolution of the chemical profile, electrical activity, and regrowth P implanted in Ge at a concentration above maximum equilibrium solubility is investigated 500°C rapid thermal annealing temperature. During first anneal, second, epitaxial part amorphous layer leads to trapping substitutional sites level about 4×1020atoms∕cm3. However, nonsubstitutional atoms frozen crystal high during recrystallization form large, inactive precipitates peculiar circular shape. Simultaneously, long...

Strain relaxation in large lattice-mismatched epitaxial films, such as Ge and III-V materials on Si, introduces high threading dislocation densities (TDDs). A thermodynamic model of TDD dependence film thickness is developed. According to this model, the quasiequilibrium a given strain-relaxed scales down with inverse square its thickness. The TDDs both GaAs films follow consistently. Our predicts lowest possible Si (100), which determined by glide activation energy

Through-wafer two-photon absorption laser experiments were performed on bulk FinFETs. Transients show distinct signatures for charge collection from drift and diffusion, demonstrating the contribution of generated in substrate to process. This result was validated through heavy ion testing more advanced FinFETs with fin widths as narrow 5 nm. The drain region dominates collection, much 45 fC collected region.

<?Pub Dtl=""?> The total ionizing dose (TID) response of bulk FinFETs is investigated for various geometry variations, such as fin width, channel length, and pitch. buildup oxide-trapped charge in the shallow trench isolation turns on a parasitic transistor, leading to increased leakage current (higher <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">${{I}_{{\rm OFF}}}$</tex></formula> .) TID-induced...

Trap-assisted tunneling (TAT) is a major hurdle in achieving sub-60-mV/decade subthreshold swing (SS) tunnel field-effect transistors (TFETs). This paper presents an insight into the TAT process presence of field-induced quantum confinement (FIQC) line TFETs. We show that SS degradation TFETs mainly caused by through traps located bulk semiconductor nearby gate dielectric. For Si n-type TFET, energy quantization conduction band found to suppress interface-region several orders magnitude and...