A5060399667- Thin-Film Transistor Technologies
- CCD and CMOS Imaging Sensors
- GaN-based semiconductor devices and materials
- Quantum Dots Synthesis And Properties
- Organic Electronics and Photovoltaics
- Ga2O3 and related materials
- Advanced Semiconductor Detectors and Materials
- Chalcogenide Semiconductor Thin Films
- Organic Light-Emitting Diodes Research
- Photocathodes and Microchannel Plates
- Nanowire Synthesis and Applications
- Analytical Chemistry and Sensors
- Gas Sensing Nanomaterials and Sensors
- Photonic and Optical Devices
- Semiconductor materials and devices
- Advanced Optical Imaging Technologies
- Nanofabrication and Lithography Techniques
- Semiconductor Lasers and Optical Devices
- Photoacoustic and Ultrasonic Imaging
- Conducting polymers and applications
- Silicon Carbide Semiconductor Technologies
- Radiation Detection and Scintillator Technologies
- Transition Metal Oxide Nanomaterials
- Advanced Memory and Neural Computing
- Medical Imaging Techniques and Applications
IMEC
2015-2024
KU Leuven
2007-2023
Poznań University of Technology
2013
Medical University of Białystok
2011
Quantum dots (QDs) have been explored for many photonic applications, both as emitters and absorbers. Thanks to the bandgap tunability ease of processing, they are prominent candidates disrupt field imaging. This review article illustrates state technology infrared image sensors based on colloidal QD Up now, this wavelength range has dominated by III–V II–VI imagers realized using flip-chip bonding. Monolithic integration QDs with readout chip promises make short-wave (SWIR) imaging...
Thin-film organic near-infrared (NIR) photodiodes can be essential building blocks in the rapidly emerging fields including internet of things and wearable electronics. However, demonstration NIR with not only high responsivity but also low dark current density that is comparable to inorganic photodiodes, for example, below 1 nA cm–2 silicon remains a challenge. In this work, we have demonstrated non-fullerene acceptor-based an ultralow 0.2 at −2 V by innovating on charge transport layers...
Short-wave infrared (SWIR) image sensors based on colloidal quantum dots (QDs) are characterized by low cost, small pixel pitch, and spectral tunability. Adoption of QD-SWIR imagers is, however, hampered a reliance restricted elements such as Pb Hg. Here, QD photodiodes, the central element sensor, made from non-restricted In(As,P) QDs that operate at wavelengths up to 1400 nm demonstrated. Three different batches using scalable, one-size-one-batch reaction feature band-edge absorption 1140,...
In this letter, we present a local substrate removal technology (under the source-to-drain region), reminiscent of through-silicon vias and report on highest ever achieved breakdown voltage <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$(V_{\rm BD})$</tex></formula> AlGaN/GaN/AlGaN double-heterostructure FETs Si (111) with only 2- Notation="TeX">$\mu\hbox{m}$</tex></formula> -thick AlGaN buffer....
We made and characterized an X-ray detector on a 25-μm-thick plastic substrate that is capable of medicalgrade performance. As indirect conversion flat panel detector, it combined standard scintillator with organic photodetector (OPD) layer oxide thin-film transistor backplane. Using solution-processed bulk heterojunction photodiode rather than the usual amorphous silicon, process temperature reduced to be compatible film substrates, number costly lithography steps are eliminated, opening...
Colloidal quantum dots based on lead sulfide (PbS) are very attractive materials for the realization of novel image sensors. They offer low cost synthesis, compatibility with a variety substrates and processing large area. The tunable band gap enables selective light detection from visible wavelengths up to short-wave-infrared (SWIR). This work describes roadmap towards integration dot photodiodes (QDPD) top Si CMOS read-out circuit. Photodiodes using an n-p junction architecture fabricated...
Abstract A curved image sensor on plastic foil has been developed for cone beam computed tomography (CBCT) X-ray imaging. The of about 6 × 8 cm 2 size built a thin polyimide with an indium gallium zinc oxide (IGZO) backplane and organic photodetectors (OPD) frontplane. flexible cesium iodide (CsI) scintillator attached to the optical 480 640 pixels 126 µm size. Dark current density OPD was low less than 10 −7 mA/cm at −2 V, while external quantum efficiency (EQE) 50% reached in visible...
In this letter, we present a small pixel pitch image sensor optimized for high external quantum efficiency in short-wavelength infrared (SWIR). Thin-film photodiodes based on PbS colloidal dot (CQD) absorber allow us to exceed the spectral limitations of silicon’s absorption while maintaining benefits CMOS technology. By monolithically integrating CDQ thin films with readout arrays, high-pixel density SWIR sensors can be achieved. To overcome remaining disadvantages CQD-based over their bulk...
Abstract Multispectral imaging in short‐wave infrared (SWIR) is a powerful analytical technique because of the distinctive spectral properties many materials this range. However, conventional SWIR image sensors are beyond reach applications due to their high price. Image based on colloidal quantum dots (CQDs) expected deliver affordable wider application scope. So far, demonstrated CQD do not have multispectral capability. Here, dual‐band photodetector PbS CQDs presented. By engineering...
We report a high-speed low dark current near-infrared (NIR) organic photodetector (OPD) on silicon substrate with amorphous indium gallium zinc oxide (a-IGZO) as the electron transport layer (ETL). In-depth understanding of origin is obtained using an elaborate set characterization techniques, including temperature-dependent current-voltage measurements, current-based deep-level transient spectroscopy (Q-DLTS), and photovoltage decay measurements. These results are complemented by energy...
Organic photodetectors made from a BAI-based near-infrared copolymer reach high detectivities of 10<sup>12</sup> Jones and low dark currents 10<sup>−7</sup> A cm<sup>−2</sup>.
Abstract Colloidal quantum dots (QDs) have attracted scientific interest for infrared (IR) optoelectronic devices due to their bandgap tunability and the ease of fabrication on arbitrary substrates. In this work, short‐wave IR photodetectors based lead sulfide (PbS) QDs with high detectivity low dark current is demonstrated. Using a combination time‐resolved photoluminescence, carrier transport, capacitance–voltage measurements, it proved that charge diffusion length in QD layer negligible...
Imaging in the infrared wavelength range has been fundamental scientific, military and surveillance applications. Currently, it is a crucial enabler of new industries such as autonomous mobility (for obstacle detection), augmented reality eye tracking) biometrics. Ubiquitous deployment cameras (on scale similar to visible cameras) however prevented by high manufacturing cost low resolution related need using image sensors based on flip-chip hybridization. One way enable monolithic...
Thin-film-based image sensors feature a thin-film photodiode (PD) monolithically integrated on CMOS readout circuitry. They are getting significant attention as an imaging platform for wavelengths beyond the reach of Si PDs, i.e., photon energies lower than 1.12 eV. Among promising candidates converting low-energy photons to electric charge carriers, lead sulfide (PbS) colloidal quantum dot (CQD) photodetectors particularly well suited. However, despite dynamic research activities in...
In this letter, we present a novel approach to enhance the breakdown voltage <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex Notation="TeX">$(V_{\rm BD})$</tex></formula> for AlGaN/GaN/AlGaN double-heterostructure FETs (DHFETs), grown by metal–organic chemical vapor deposition on Si (111) substrates through silicon-substrate-removal and layer-transfer process. Before removing substrate, both buffer isolation test...
Amorphous indium-gallium-zinc-oxide (a-IGZO) is demonstrated as an electron transport layer (ETL) in a high-performance organic photodetector (OPD). Dark current the range of 10 nA/cm2 at bias voltage −2 V and high photoresponse visible spectrum were obtained inverted OPDs with poly(3-hexylthiophene) phenyl-C61-butyric acid methyl ester active layer. The best results for optimum a-IGZO thickness 7.5 nm specific detectivity 3 × 1012 Jones wavelength 550 nm. performance OPD devices using was...
Using flat‐panel compatible processes we realized 6x8 cm, 200‐ppi active‐matrix imagers with solution‐processed, ultrathin organic photodiodes and demonstrate its performance in a biometric palmprint detector.
Image sensors are must-have components of most consumer electronics devices. They enable portable camera systems, which find their way into billions devices annually. Such high volumes possible thanks to the complementary metal-oxide semiconductor (CMOS) platform, leveraging wafer-scale manufacturing. Silicon photodiodes, at core CMOS image sensors, perfectly suited replicate human vision. Thin-film absorbers an alternative family photoactive materials, distinguished by layer thickness...
We report on a detailed investigation of the degradation AlGaN/GaN Schottky diodes grown silicon, submitted to high reverse-bias. The analyzed devices have vertical structure; thanks this feature, it was possible (i) characterize effects stress by means capacitance-voltage (C-V) measurements, therefore, identifying and localizing trap states generated as consequence tests; (ii) accurately control intensity distribution electric field over time. Results indicate that induces an increase in...
Abstract High‐resolution RGB organic light‐emitting diode frontplane is a key enabler for direct‐view transparent augmented reality displays. In this paper, we demonstrate 1250 ppi passive displays and semi‐transparent active Organic photolithography can provide pixel density above 1000 while keeping effective emission area high because of aperture ratio. Patterns with 2 μm line pitch were successfully transferred to layers, indicating possible further scaling. Lifetime after patterning,...