A5088262973- ZnO doping and properties
- Ga2O3 and related materials
- Quantum Dots Synthesis And Properties
- Perovskite Materials and Applications
- Chalcogenide Semiconductor Thin Films
- Transition Metal Oxide Nanomaterials
- Thin-Film Transistor Technologies
- CCD and CMOS Imaging Sensors
- Advanced Semiconductor Detectors and Materials
- Photonic and Optical Devices
- Copper-based nanomaterials and applications
- Solid-state spectroscopy and crystallography
- Semiconductor materials and interfaces
- Nanowire Synthesis and Applications
- Gas Sensing Nanomaterials and Sensors
- Advanced Surface Polishing Techniques
- Luminescence Properties of Advanced Materials
- Advanced Photocatalysis Techniques
- Nuclear Materials and Properties
- Advanced Thermoelectric Materials and Devices
- Semiconductor Lasers and Optical Devices
- Semiconductor materials and devices
- Silicone and Siloxane Chemistry
- Semiconductor Quantum Structures and Devices
- Electronic and Structural Properties of Oxides
IMEC
2021-2024
The University of Texas at Dallas
2017-2022
KU Leuven
2021
Universidad Michoacana de San Nicolás de Hidalgo
2014
The black perovskite phase of CsPbI
One of the major limitations oxide semiconductors technology is lack proper p-type materials to enable devices such as pn junctions, light-emitting diodes, and photodetectors. This limitation has resulted in an increased research focus on these materials. In this work, NiO x thin films with tunable optical electrical properties well its dependence oxygen pressure during pulsed laser deposition are demonstrated. The control resistivity ranged from ∼109 ∼102 Ω cm, showing a behavior Eg tuning...
Large-area compatible, solar-blind deep-ultraviolet sensors based on active pixels are demonstrated with CMOS amplifiers poly-Si thin-film transistors and Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> photoresistors. The pixel configuration sensor enables approximately 40X higher responsivity compared to a discrete sensor, the inverter amplifier exhibits gain of 210 V/V. -based...
In recent years <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> thin films and crystals have gained attention as excellent candidates for transparent high-power applications due to its wide band gap (4.6 – 4.9 eV) large breakdown field (~8 mV/cm). However,...
All-inorganic cesium lead halide perovskites possess excellent thermal stability, a feature that renders them highly favorable for optoelectronic applications with an elevated budget. Employing coevaporation approach their deposition holds promise manufacturing at industrial level, owing to improvements in device scalability and reproducibility. For unlocking the full potential of vacuum-evaporated perovskite thin films, it is crucial delve deeper into crystallization process, which, as...
The wide band gap and high breakdown field of β-Ga2O3 single crystals thin films have recently attracted considerable attention not only for high-power applications, fabricating devices such as transistors diodes, but also several other applications deep-UV (DUV) sensors, with a cutoff at ∼280 nm, resulting in visible-blind detectors. Currently, most the UV- DUV-based simple metal–semiconductor–metal (MSM) systems use interdigitated electrodes, which requires high-quality, defect-free films....
Following the rapid increase of organic metal halide perovskites toward commercial application in thin-film solar cells, inorganic alternatives attracted great interest with their potential longer device lifetime due to stability improvement under increased temperatures and moisture ingress. Among them, cesium lead iodide (CsPbI3) has gained significant attention similar electronic optical properties methylammonium (MAPbI3), a band gap 1.7 eV, high absorption coefficient, large diffusion...
Image sensors are must-have components of most consumer electronics devices. They enable portable camera systems, which find their way into billions devices annually. Such high volumes possible thanks to the complementary metal-oxide semiconductor (CMOS) platform, leveraging wafer-scale manufacturing. Silicon photodiodes, at core CMOS image sensors, perfectly suited replicate human vision. Thin-film absorbers an alternative family photoactive materials, distinguished by layer thickness...
The oxygen partial pressure during NiO deposition in reactive sputtering of a Ni target is used to control its carrier type and concentration, obtaining both n- p-type films. Carrier concentration can be controlled, ranging from 1019 1014 cm-3. Films performed at 200 °C, relatively low temperature that enables the use glass as substrate. Experimental band diagrams for n-type are obtained first time. Finally, homojunction demonstrated by introducing layer between p+-type layers. Layers...
Perovskite-based semiconductors, such as methylammonium and cesium lead halides (MPbX3: M = CH3NH3+ or Cs+; X I–, Br–, Cl–), have attracted immense attention for several applications, including radiation detection, due to their excellent electronic optical properties.1,2,3,4,5,6 In addition, the combination of perovskites with other materials enables unique device structures. For example, robust reliable diodes result when combined metal oxide semiconductors. This can be used detection...
We analyze the Al doping effect in CdS films by chemical bath deposition and how it impacts this a heterojunction, for case of ITO/CdS:Al/NiOx/Ni/Au. The results show that aluminum on does slightly affect structural morphological properties. impact is related to electrical properties; first, with decrement resistivity from 108 107 Ω cm, work function decreases 4.7 4.3 eV, bandgap valence band suffers small increment 0.1 eV. change properties diode behavior, leads an Fermi energy level...
Abstract The majority of solid‐state radiation sensors are predominantly single crystals. However, for low‐cost and large‐area device applications, thin films a better option. first evidence neutron detection using Gallium Oxide/Cesium Lead Bromide (Ga 2 O 3 /CsPbBr ) diode enabled by an innovative close space sublimation (CSS) method that allows deposition thick CsPbBr is demonstrated. Furthermore, indirect sensing achieved 10 B layer diodes biased at voltages as low –5 V, showing the...
Thin film photodiodes (TFPD) can supplement complementary metal-oxide-semiconductor (CMOS) image sensor vision by their exotic optoelectronic properties assisted monolithic processability. Halide perovskites are known to show outstanding properties, such as large absorption coefficient, long carrier diffusion lengths, and high mobility, leading external quantum efficiency (EQE) fast charge transport in (PDs), especially compared with other thin-film photodiode candidates. In this paper,...
In this paper, we present thin-film photodetector (TFPD) image sensors for the short-wave infrared (SWIR) range. Monolithic integration of quantum dot (QD) absorbers enables efficiency 70% at 1400 nm and pixel pitch below 2 μm. We on custom CMOS readout fabricated using 130 node. review latest advancements photodiode stack engine, including pinned architecture. Furthermore, study manufacturing flows to realize full wafer capability volume processing. QD are paving way add augmented vision...
Germanium photodiodes integrated via selective epitaxial growth typically have low detectivity. We demonstrate process approaches that are needed to minimize defectivity in germanium, thereby paving way towards with dark current and high
Thin-film photodiodes (TFPD) monolithically integrated on the Si Read-Out Integrated Circuitry (ROIC) are promising imaging platforms when beyond-silicon optoelectronic properties required. Although TFPD device performance has improved significantly, pixel development been limited in terms of noise characteristics compared to Si-based image sensors. Here, a thin-film-based pinned photodiode (TF-PPD) structure is presented, showing reduced kTC and dark current, accompanied with high...