A5023824267- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Ga2O3 and related materials
- Quantum and electron transport phenomena
- Semiconductor Quantum Structures and Devices
- Physics of Superconductivity and Magnetism
- Nanowire Synthesis and Applications
- Advancements in Semiconductor Devices and Circuit Design
- Metal and Thin Film Mechanics
- ZnO doping and properties
- Magnetic properties of thin films
- Surface and Thin Film Phenomena
- Advancements in Photolithography Techniques
- Plasma Diagnostics and Applications
- CCD and CMOS Imaging Sensors
- Semiconductor materials and interfaces
- Optical Coatings and Gratings
- Photonic and Optical Devices
- Thin-Film Transistor Technologies
- Advanced Chemical Physics Studies
IMEC
2023
CEA Grenoble
2015-2019
CEA LETI
2015-2019
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2015-2019
Université Grenoble Alpes
2015-2019
Institut polytechnique de Grenoble
2016-2018
Direction de la Recherche Technologique
2016
Université Joseph Fourier
2008-2010
Institut Néel
2008-2010
Centre National de la Recherche Scientifique
2008-2010
Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in industry silicon-based and currently faced with diminishing returns of performance versus cost investment. At material level, its high electric field strength electron mobility have already shown for frequency communications photonic applications. Advances on commercially viable large area substrates are now at the point where power conversion applications GaN cusp...
We study the disorder dependence of phase coherence time quasi-one-dimensional wires and two-dimensional (2D) Hall bars fabricated from a high mobility GaAs/AlGaAs heterostructure. Using an original ion implantation technique, we can tune intrinsic felt by 2D electron gas continuously vary system semiballistic regime to localized one. In diffusive regime, follows power law as function diffusion coefficient expected in Fermi-liquid theory, without any sign low-temperature saturation....
We have studied capping layers for AlGaN‐based high electron mobility transistor (HEMT) structures, looking at different thicknesses of GaN, SiN, and GaN + SiN caps. has no effect on the sheet resistance layers, as expected from a quality amorphous passivation layer. cap increase whether combined with or not, consequence polarisation charge present GaN/AlGaN interface. For both caps their own, we get excellent morphology only 2 nm thickness, degradation up to 10 thick. caps, speckled lots...
We present phase coherence time measurements in quasi-one-dimensional mesoscopic wires made from high mobility two-dimensional electron gas. By implanting gallium ions into a GaAs/AlGaAs heterojunction we are able to vary the diffusion coefficient over 2 orders of magnitude. show that diffusive limit, decoherence follows power law as function expected by theory. When disorder is low enough so samples semiballistic, observe new and unexpected regime which independent disorder. In addition,...
Energy is one of the main societal challenges 21th century. With growth population and cities, CO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> emission reduction, efficiency improvements especially in transportation modes will have to be enhanced. Cost driver power devices. This paper reviews developments at CEA-Leti electronics. A complete GaN on 200 mm line has been implemented. For each stage device realization a discussion issues done.
Deep traps in AlGaN/GaN Schottky barrier diodes have been investigated using deep level transient spectroscopy. It has found that ion-assisted gate recess process leads to the formation of electron traps. The defects related these are mainly located two-dimensional gas channel below contact, meaning partial etching AlGaN layer produces damage on top underlying GaN layer. activation energies traps, extracted from data, range between 0.28 and 0.41 eV. We believe centers complexes linked with...
In this paper, we present a new method of sheet resistance measurement on AlGaN/GaN wafers. Such measurements are useful for an easy monitoring epitaxy. Measurements were obtained by adapting the four-point probe technique to This is used today in 200mm GaN-on-Si fabrication line at CEA-LETI with standard deviation 2% measurement.
Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and MOS contact, we make use of this dual nature show direct path capture energy diagram nitride system. We then apply transparency calculations describe forward conduction regime heterojunction demonstrate it realizes tunnel diode, in contrast its regular Schottky Barrier Diode designation. Thermionic emission is...
Cathode related current collapse effect in GaN on Si Schottky barrier diodes is investigated this paper. Capacitance and relaxation measurements gated-Van Der Pauw are associated with temperature dependent dynamic RON transients analysis to identify the parasitic trapping locations devices. We show here that main part of at cathode comes from a combination electron passivation layer carbon trap buffer layers (E <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
We have studied the process of AlN nucleation on silicon by metal-organic chemical vapor phase deposition. shown that for our reactor, which incorporates a chlorine-based chamber clean, we require similar growth conditions to those be optimum molecular beam epitaxy, is say small amount NH3 followed tri-methyl aluminum (TMAl). When TMAl was introduced first, resulting layers were low quality and cracked. Furthermore, highest layers, with longer injection, an increased density "inverted...
The morphological stability during activation annealing of Mg-implanted GaN layers (2 μm thick) grown on Si (111) is studied for several protective and fluencies in the 1013–1015 at. cm−2 range. We show that a thin capping, composed few nanometer thick AlN SiNx stacks situ just after deposition, provides good solution to retain flat morphology no strain cracking up 1 h at 1100 °C N2. These results are compared thicker stackings with Si3N4 or SiO2 deposited implantation withstand thermal...
pGaN Gate HEMTs are promising normally-OFF transistors for which the use of magnesium (Mg) doping allows modulation threshold voltage (Vth) but at cost an ON-state resistance (Ron) degradation. In this study, we propose rigorous TCAD simulations that describe Mg impact on both electrical parameters (Vth and Ron) in agreement with experimental data. We emphasize importance as additional tool to optimize Vth-Ron process-window.
The semiconductor industry has a highly developed infrastructure for silicon processing with high level of automation, state the art facilities and ability to deal large volumes which lead lower fabrication costs. GaN on can take advantage this maturity process, especially use 200 mm substrates giving access CMOS compatible fabs. This requires specific growth tools excellent uniformity low defectivity ensure compatibility these lines. Combining industrialization techniques outstanding...
We present phase coherence time measurements in quasi-one-dimensional Ag wires implanted with ${\mathrm{Ag}}^{+}$ ions an energy of $100\phantom{\rule{0.3em}{0ex}}\mathrm{keV}$. The have been carried out the temperature range from $100\phantom{\rule{0.3em}{0ex}}\mathrm{mK}$ up to $10\phantom{\rule{0.3em}{0ex}}\mathrm{K}$; this has be compared Kondo iron silver, i.e., ${T}_{K}^{\mathrm{Ag}∕\mathrm{Fe}}\ensuremath{\approx}4\phantom{\rule{0.3em}{0ex}}\mathrm{K}$, used recent experiments on...
We present significant performance enhancements of AlGaN/GaN power Schottky diodes on 200 mm silicon substrates achieved by optimizing the anode fabrication and epitaxial layers. 600V rated using a MIS (Metal Insulator Semiconductor)-gated were processed CMOS compatible process flow transferable to mass production environments. Turn-on voltages V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> around 0.6 at 25°C, forward Vf lower than...
Germanium photodiodes integrated via selective epitaxial growth typically have low detectivity. We demonstrate process approaches that are needed to minimize defectivity in germanium, thereby paving way towards with dark current and high
Cathode related current collapse effect in GaN on Si SBDs (Schottky Barrier Diode) is investigated this paper. Capacitance and relaxation measurements diodes gated-VDP (Van Der Pauw) are associated with temperature dependent dynamic R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf> transients analysis showing that the main part of at cathode comes from a combination electron trapping passivation layer carbon hole trap buffer layers (Ea...
Thin-film photodiodes (TFPD) monolithically integrated on the Si Read-Out Integrated Circuitry (ROIC) are promising imaging platforms when beyond-silicon optoelectronic properties required. Although TFPD device performance has improved significantly, pixel development been limited in terms of noise characteristics compared to Si-based image sensors. Here, a thin-film-based pinned photodiode (TF-PPD) structure is presented, showing reduced kTC and dark current, accompanied with high...