A5037021915- Peanut Plant Research Studies
- GaN-based semiconductor devices and materials
- Coconut Research and Applications
- Plant tissue culture and regeneration
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Plant Virus Research Studies
- Plant Genetic and Mutation Studies
- Optical Polarization and Ellipsometry
- Chromosomal and Genetic Variations
- Ga2O3 and related materials
- Advanced Combustion Engine Technologies
- Nitrogen and Sulfur Effects on Brassica
- Photosynthetic Processes and Mechanisms
- Adaptive optics and wavefront sensing
- Advancements in Semiconductor Devices and Circuit Design
- Plant Stress Responses and Tolerance
- Soybean genetics and cultivation
- Catalytic Processes in Materials Science
- Advanced Computational Techniques and Applications
- Radio Frequency Integrated Circuit Design
- Plant Molecular Biology Research
- Stellar, planetary, and galactic studies
- Advanced oxidation water treatment
- Power Systems and Technologies
Qingdao Agricultural University
2013-2024
Shandong University of Technology
2024
University of Notre Dame
2015-2023
Weichai Power (China)
2020-2023
Micron (United States)
2021-2023
Nanjing Tech University
2023
Broadcom (United States)
2023
Shandong University
2016-2022
Xi'an Jiaotong University
2015-2018
MicroLink Devices (United States)
2018
Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in industry silicon-based and currently faced with diminishing returns of performance versus cost investment. At material level, its high electric field strength electron mobility have already shown for frequency communications photonic applications. Advances on commercially viable large area substrates are now at the point where power conversion applications GaN cusp...
Epitaxial p-i-n structures grown on native GaN substrates have been fabricated and used to extract the impact ionization coefficients in GaN. The photomultiplication method has experimentally determine coefficients; avalanche dominated breakdown is confirmed by variable-temperature measurements. To facilitate measurements of both electrons holes, include a thin pseudomorphic In0.07Ga0.93N layer cathode side drift layer. Illumination with 193 nm 390 UV light performed diodes different...
An approach to realizing high-voltage, high-current vertical GaN-on-GaN power diodes is reported. We show that by combining a partially compensated ion-implanted edge termination (ET) with sputtered SiNx passivation and optimized ohmic contacts, devices approaching the fundamental material limits of GaN can be achieved. Devices breakdown voltages (Vbr) 1.68 kV differential specific on resistances (Ron) 0.15 mΩ cm2, corresponding Baliga figure merit 18.8 GW/cm2, are demonstrated...
The concept and simulated device characteristics of tunneling field-effect transistors (TFETs) based on III-nitride heterojunctions are presented for the first time. Through polarization engineering, interband can become significant in heterojunctions, leading to potential a viable TFET technology. Two prototype designs, inline sidewall-gated TFETs, discussed. Polarization-assisted p-type doping is used source region mitigate effect deep Mg acceptor level GaN. Simulations indicate that TFETs...
Auxin response factors (ARFs) are transcription that regulate the of auxin-responsive genes during plant growth and development. In this study, 29 30 ARF members were identified from two wild peanut species, A. duranensis ipaensis, respectively. The ARFs, including their classifications, conserved domains evolutionary relationships characterized. RNA-seq analyses revealed some responsive to abiotic stress, particularly high salinity. addition expression 2 was also regulated by biotic...
An epitaxial lift‐off (ELO) process for GaN materials has been demonstrated using bandgap‐selective photoenhanced wet etching of an InGaN release layer. This applied to layers grown on sapphire as well native substrates a perforation technique scale the up wafers arbitrary size. The advantage leveraging conventional MOCVD growth form layer, with minimal degradation films top ELO is non‐destructive and can enable cost reduction through reuse substrate after ELO. have characterized before AFM,...
In this paper, a model is proposed for the optimal operation of multi-energy microgrids (MEMGs) in presence solar photovoltaics (PV), heterogeneous energy storage (HES) and integrated demand response (IDR), considering technical economic ties among resources. Uncertainty power as well flexibility electrical, cooling heat load are taken into account. A p-efficient point method applied to compute PV at different confidence levels based on historical data. This converts uncertain from...
We demonstrate an ion-implanted triple-zone junction termination extension (JTE) for vertical GaN p-n diodes. Due to the spatial distribution of fixed charge in JTE structure, peak electric fields at contact metal edge and are significantly reduced compared conventional approaches. The forward reverse characteristics diodes with single-zone explored here have been studied experimentally. fabricated using obtain experimentally measured maximum breakdown voltage 1.27 kV, appreciably higher...
Peanut (Arachis hypogaea L.) is an important oilseed crop worldwide. However, soil salinization becomes one of the main limiting factors peanut production. Therefore, developing salt-tolerant varieties and understanding molecular mechanisms salt tolerance to protect yield in saline areas. In this study, we selected four with contrasting response challenges T1 T2 being S1 S2 susceptible. High-throughput RNA sequencing resulted more than 314.63 Gb clean data from 48 samples. We identified...
Carbon, a compensator in GaN, is an inherent part of the organometallic vapor phase epitaxy (OMVPE) environment due to use sources. In this study, impact growth conditions are explored on incorporation carbon GaN prepared via OMVPE pseudo-bulk wafers (in several cases, identical growths were performed GaN-on-Al2O3 templates for comparison purposes). Growth with different efficiencies but ammonia molar flows, when normalized rate, resulted incorporation. It concluded that only...
The temperature dependence of the electron and hole impact ionization coefficients in GaN has been investigated experimentally. Two types p-i-n diodes grown on bulk substrates have fabricated characterized, for both electrons holes extracted using photomultiplication method. Both decrease as increases. Okuto-Crowell model was used to describe coefficients. Based measured coefficients, breakdown voltage non-punch through p-n can be predicted; good agreement with experimentally reported...
While clathrin heavy chains from different species are highly conserved in amino acid sequence, light much more divergent. Thus chain may have functions organisms. To investigate function, we cloned the chain, clcA, Dictyostelium and examined function clcA– mutants. Phenotypic deficiencies development, cytokinesis, osmoregulation showed that was critical for . In contrast with budding yeast, found did not influence steady‐state levels of clathrin, triskelion formation, or contribute to...
We applied a Monte Carlo method — simulated annealing algorithm to carry out the design of multilayer achromatic waveplate. present solutions for three-, six- and ten-layer waveplates. The optimized retardance settings are found be 89°51'39''±0°33'37'' 89°54'46''±0°22'4'' waveplates, respectively, wavelength range from 1000 nm 1800 nm. polarimetric properties waveplates investigated based on several numerical experiments. In contrast previously proposed three-layer waveplate, fast axes new...
High-performance vertical GaN-based p-n junction diodes fabricated using bandgap selective photoelectrochemical etching-based epitaxial liftoff (ELO) from bulk GaN substrates are demonstrated. The layers and pseudomorphic InGaN release layer were grown by MOCVD on substrates. A comparison study was performed between devices after processing (after transfer to a Cu substrate) nominally identical control without the buried or ELO-related processing. ELO bonded exhibit nearly electrical...