A5001074861- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Antenna Design and Analysis
- GaN-based semiconductor devices and materials
- Smart Grid Energy Management
- Advanced MIMO Systems Optimization
- Neural Networks and Reservoir Computing
- Microgrid Control and Optimization
- Energy Harvesting in Wireless Networks
- Ga2O3 and related materials
- Millimeter-Wave Propagation and Modeling
- ZnO doping and properties
- Microwave Engineering and Waveguides
- Electronic and Structural Properties of Oxides
- Advanced Antenna and Metasurface Technologies
- Parallel Computing and Optimization Techniques
- Advanced Condensed Matter Physics
- Neural dynamics and brain function
- Graphene research and applications
- Ferroelectric and Piezoelectric Materials
- Physics of Superconductivity and Magnetism
- Antenna Design and Optimization
- Low-power high-performance VLSI design
University of California, San Diego
2024-2025
University of Sheffield
2016-2023
Indira Gandhi Delhi Technical University for Women
2014-2023
Jawaharlal Nehru University
2021
Career Point University
2020
Sri Aurobindo Institute of Technology
2018
SRM University
2017
Guru Gobind Singh Indraprastha University
2015
Indian Institute of Science Bangalore
2013-2014
Florida State University
2011
Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in industry silicon-based and currently faced with diminishing returns of performance versus cost investment. At material level, its high electric field strength electron mobility have already shown for frequency communications photonic applications. Advances on commercially viable large area substrates are now at the point where power conversion applications GaN cusp...
Abstract CMOS-RRAM integration holds great promise for low energy and high throughput neuromorphic computing. However, most RRAM technologies relying on filamentary switching suffer from variations noise, leading to computational accuracy loss, increased consumption, overhead by expensive program verify schemes. We developed a filament-free, bulk technology address these challenges. systematically engineered trilayer metal-oxide stack investigated the characteristics of with varying...
An electrochemical device capable of manifesting reversible charge storage at the interface an active layer offers formidable advantages, such as low switching energy and long retention time, in realizing synaptic behavior for ultralow power neuromorphic systems. Contrary to a supercapacitor-based field-effect that is prone memory due fast discharge, solid electrolyte-gated ZnO thin-film exhibiting battery-controlled mechanism via mobile charges its with tantalum oxide demonstrated. Analysis...
With Moore’s law nearing its end due to the physical scaling limitations of CMOS technology, alternative computing approaches have gained considerable attention as ways improve performance. Here, we evaluate performance prospects a new approach based on disordered superconducting loops with Josephson-junctions for energy efficient neuromorphic computing. Synaptic weights can be stored internal trapped fluxon states three connected multiple (JJ) and modulated by input signals applied in form...
The aim of this paper is to present results on output power level distributions radio base stations (RBSs) and user devices connected a wideband code division multiple access-based third generation (3G) mobile communication network in India relate the realistic human exposure frequency (RF) electromagnetic field (EMF) emitted by corresponding RBSs devices. have been obtained through network-based measurements. In downlink, data from 868 were gathered during seven days. five different...
Negative capacitance transistors are a unique class of switches capable operation beyond the Boltzmann limit to realize subthermionic switching. To date, negative effect has been predominantly attributed devices employing an unstable insulator with ferroelectric properties, exhibiting two-well energy landscape, in accordance Landau theory. The theory and solid electrolyte field transistor (SE-FET) subthreshold swing less than 60 mV/dec absence gate dielectric demonstrated this work. Unlike...
We investigate the effects of nitrogen passivation on band structure and density states in zigzag graphene nanoribbon (zzGNR) using first principle quantum mechanical simulations. The results show that edge termination zzGNR produces a bandgap (~0.7eV) around Fermi level. analyze Bloch functions projected for understanding origin bandgap. Based these findings, we propose nitrogen-passivated FET having n-type electrodes p-type scattering region boron doping, respectively. simulate its...
p‐Channel gallium nitride (GaN) metal–oxide–semiconductor heterostructure field‐effect transistors utilising a polarisation induced two‐dimensional hole gas operate inherently in depletion mode. The condition for their conversion to enhancement‐mode operation is examined via analytical expressions the threshold voltage and verified technology computer‐aided design (TCAD) simulations. Between two heterostructures: (i) conventional GaN/aluminium GaN (AlGaN)/GaN (ii) alternate...
A novel mechanism to achieve a nonambipolar tunnel FET (TFET) is proposed in this paper. The method relies on polarization charge induced semiconductors, such as group III nitrides, enhance the electric field across junction and facilitate unidirectional tunneling based polarity of applied gate bias. This also enables enhanced control over distance, reducing it significantly comparison conventional TFET. p-channel device implemented vertical GaN nanowire geometry facilitates reduction...
An investigation of the distribution electric field within a normally-off p-channel heterostructure field-effect transistor in GaN, explains why high |V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> | requires reduction thickness oxide and GaN channel layer. The trade-off between on-current |I xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> |, responsible for poor xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> E-mode devices...
Underwater communication has a range of applications including autonomous underwater vehicle (AUV) and remotely operated (ROV) docking in the offshore industry. As available acoustic limited data rate can, i.e., up to tens kbps for distances ranging kilometers hundreds few meters. Whereas wireless optical capable providing higher short can be viable alternative applications. In this paper, main focus is understand effect environment condition different water types on links that influence...
This research article presents a novel microstrip modified rectangular Electromagnetic energy antenna having V-band applications. A radiating EM wave monopole is utilized in the design to achieve resonance at 46.97GHz with return loss of -42.80 dB. The introduced MIMO consists interconnected and circular patches shape joker. It designed on substrate composed Rogers RT/Duroid 5880 which 0.254mm thick. has frequency range 42.2- 49.6GHz. HFSS software was used suggested antenna. provides good...
We demonstrate a novel concept for low power compute-in-memory applications in room temperature fabricated ZnO/Ta 2 O 5 thin film transistor.By writing during the off-state, device consumption is reduced to nW despite large L/W ratio.A thinner gate insulator thickness gives higher on/off ratio, nevertheless this reduces retention time.The ratio thicker oxide can be improved by asymmetric voltage pulses of magnitude off state without affecting consumption.Benchmarked against other ReRAM...
This research sets an objective for mmWave28 GHz MIMO antenna fabricated on Neltec NY9233 Microwave-substrate. The is designed in two configurations, firstly single-element with dimension $14.00mm \times 6.50mm$ and then transformed to two-port configuration. radiating patch which dome shaped printed top-plane of the substrate obtain narrow bandwidth, complete ground opposite plane substrate. achieves narrow-bandwidth 27.06GHz-28.85GHz highest matching impedance at 28.0GHz(47+j2.50)$\Omega$...
In the past body terminal was considered as an exclusive source of unwanted second order effects. But recently use is becoming attractive opportunity for improving performance analog integrated circuits. Low frequency harmonic distortion stems from effect and dependent on coefficient. most analysis, present in conventional flipped voltage follower (FVF) has been neglected however submicron low circuits it cannot be neglected. this paper, we propose to utilize positively using dynamic...
The operation principle of a low power E-mode p-channel GaN MOSHFET is explained via TCAD simulations. challenges achieving negative threshold voltage with the scaling gate length are addressed by adjusting mole fraction an AlGaN cap layer beneath gate. An inverter consisting proposed 0.25 μm shows promise CMOS compatible management IC in megahertz range.
Introduction of positive polarization charge by utilising an AlGaN cap layer between the gate oxide and channel is one promising techniques to deplete a two-dimensional hole gas (2DHG) achieve E-mode p-channel GaN MOSHFET. The results from TCAD simulations indicate that off-state leakage increases orders magnitude for layers thicker than 20 nm in this structure. Biasing electron beneath 2DHG helps alleviate limitation at cost reducing on-current. Scaling access regions combining two allow...
We derive the necessary conditions for a steep subthreshold switching of Paraelectric FET with gate scan frequency. Despite an absence two-valley energy profile, paraelectric FETs can be represented by series R-C circuit that exhibit sub-60 mV/dec under dynamic during reverse sweep bias.
Green wireless communication has drawn ample interest in the 5G cellular networks. In this article, we investigate an energy‐efficient power allocation with spectrum sensing for cognitive radio (CR) The optimization problem is formulated as a ratio of sum rate (SR) to total consumption signal transmission and subject constraint. Because original nonconvex, adopt Dinkelback's method propose optimal scheme that iteratively improves energy efficiency (EE) performance CR network finally gives...
An efficient energy management scheme for a standalone hybrid AC/DC microgrid (HMG) has been proposed in this paper. Energy is challenging task, because of the involvement distributed resources (DERs) which are intermittent nature. The may therefore, undergo mismatch demand and supply, when either generation or load varies. This power result into DC bus voltage deviations sometimes these be out permissible limits. A coordination control-based strategy (CCS) deviation mitigation investigated...