A5061824108- Graphene research and applications
- Advanced Memory and Neural Computing
- Carbon Nanotubes in Composites
- Neural Networks and Reservoir Computing
- Neural dynamics and brain function
- Transition Metal Oxide Nanomaterials
- Advancements in Semiconductor Devices and Circuit Design
- Perovskite Materials and Applications
- ZnO doping and properties
- Fuel Cells and Related Materials
- Advancements in Battery Materials
- Conducting polymers and applications
- Semiconductor materials and devices
- Graphene and Nanomaterials Applications
- 2D Materials and Applications
- Innovative Energy Harvesting Technologies
- Pigment Synthesis and Properties
- Thin-Film Transistor Technologies
- Wireless Power Transfer Systems
- Supercapacitor Materials and Fabrication
- Carbon and Quantum Dots Applications
- Arsenic contamination and mitigation
- Adsorption and biosorption for pollutant removal
- Ferroelectric and Piezoelectric Materials
- Iron oxide chemistry and applications
University of Manchester
2020-2024
Henry Royce Institute
2020-2024
University of Sheffield
2010-2023
Institute of Catalysis and Petrochemistry
2018
SolarPrint (Ireland)
2014
Jawaharlal Nehru Centre for Advanced Scientific Research
2011
We show that the hybrids of single-layer graphene oxide with manganese ferrite magnetic nanoparticles have best adsorption properties for efficient removal Pb(II), As(III), and As(V) from contaminated water. The nanohybrids prepared by coprecipitation technique were characterized using atomic force scanning electron microscopies, Fourier transformed infrared spectroscopy, Raman X-ray diffraction, surface area measurements. Magnetic character was ascertained a vibrating sample magnetometer....
Manipulating the surface energy, and thereby wetting properties of solids, has promise for various physical, chemical, biological industrial processes. Typically, this is achieved by either chemical modification or controlling hierarchical structures surfaces. Here we report a phenomenon whereby vermiculite laminates are controlled hydrated cations on in interlamellar space. We find that can be tuned from superhydrophilic to hydrophobic simply exchanging cations; hydrophilicity decreases...
Artificial synaptic thin film transistors (TFTs) capable of simultaneously manifesting signal transmission and self-learning are demonstrated using transparent zinc oxide (ZnO) in combination with high κ tantalum as gate insulator. The devices exhibit pronounced memory retention a window excess 4 V realized an operating voltage less than 6 V. Gate polarity induced motion oxygen vacancies the insulator is proposed to play vital role emulating behavior, directly measured between source drain...
An electrochemical device capable of manifesting reversible charge storage at the interface an active layer offers formidable advantages, such as low switching energy and long retention time, in realizing synaptic behavior for ultralow power neuromorphic systems. Contrary to a supercapacitor-based field-effect that is prone memory due fast discharge, solid electrolyte-gated ZnO thin-film exhibiting battery-controlled mechanism via mobile charges its with tantalum oxide demonstrated. Analysis...
Van der Waals (vdW) heterostructures continue to attract intense interest as a route of designing materials with novel properties that cannot be found in naturally occurring materials. Unfortunately, this approach is currently limited only few layers can stacked on top each other. Here we report bulk material consisting superconducting monolayers interlayered displaying charge density waves (CDW). This vdW heterostructure created by phase transition 1T-TaS2 6R at 800 {\deg}C an inert...
Abstract Silver has long been recognized for its potent antimicrobial properties, but achieving a slow and longer‐term delivery of silver ions presents significant challenges. Previous efforts to control ion dosages have struggled sustain release extended periods in biomimetic environments, especially the presence complex proteins. This challenge is underscored by absence technology sustaining activity, context orthopedic implants where long‐term efficacy, extending beyond 7 days, essential....
Negative capacitance transistors are a unique class of switches capable operation beyond the Boltzmann limit to realize subthermionic switching. To date, negative effect has been predominantly attributed devices employing an unstable insulator with ferroelectric properties, exhibiting two-well energy landscape, in accordance Landau theory. The theory and solid electrolyte field transistor (SE-FET) subthreshold swing less than 60 mV/dec absence gate dielectric demonstrated this work. Unlike...
The performances of six solar cell technologies for indoor energy harvesting are assessed under a controlled light intensity 77.40 μW/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . A comparison the calculated efficiencies crystalline (c-Si), polycrystalline (poly-Si), amorphous silicon (a-Si), perovskite, gallium arsenide (GaAs) and dye-sensitized cells (DSSC) shows that both DSSC GaAs exhibit an efficiency ∼28%, whereas perovskite...
The Schottky barrier between the nanoporous TiO2/F–doped SnO2 interface is extracted via experiment for first time using two independent approaches. In approach, Ohmic contacts Ti and Al on TiO2 film are made to facilitate temperature dependant IV measurements. An height of ∼0.6 eV at assuming a theoretical value Richardson's constant obtained. incorrectly deduced be 0.31 if Richardson from experimental data fitted thermionic emission theory employed. second voltage dependent 0.53 T = 285 K...
Here we report on a "new" type of ordering which allows to modify the electronic structure graphene monolayer (ML). We have intercalated small gold clusters between top and buffer layer epitaxial graphene. show that these perturb quasiparticles ML graphene, act as quantum dots creating superlattice resonators ML, revealed by strong pattern standing waves. A detailed analysis wave patterns using Fourier Transform Scanning Tunneling Spectroscopy strongly indicates this phenomenon can arise...
A Pd-contacted dopant-free CNTFET with small-diameter (0.57 nm) carbon nanotube showing an anomalous n-type electrical characteristic is reported for the first time. This observed behaviour attributed to a work function higher than (or close to) palladium as well large hole-to-electron effective mass ratio of approximately 2.5 predicted by hybridization in nanotubes. variation conduction type temperature also and increase decrease CNT increasing temperature.
A critical assessment of the influence GW bandgap on performance CNT-TFETs reveals smaller on-off ratios and on-current than previously estimated. The revised band gaps are found to now explain a wide range experimental SB CNTFETs in literature. In conventional TFET device geometry with uncovered source/drain regions, semiconducting CNT diameter 0.85 nm exhibit superior ratio (>10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> ),...
Signatures of a superlattice structure composed quasi periodic arrangement atomic gold clusters below an epitaxied graphene (EG) layer are examined using dispersive Raman spectroscopy. The gold-graphene system exhibits laser excitation energy dependant red shift the 2D mode as compared to pristine epitaxial graphene. phonon dispersions in both systems mapped experimentally observed signatures and third-nearest neighbour tight binding electronic band model. Our results reveal that dependent...
Two-dimensional (2D) materials offer a prospect of membranes that combine negligible gas permeability with high proton conductivity and could outperform the existing exchange used in various applications including fuel cells. Graphene oxide (GO), well-known 2D material, facilitates rapid transport along its basal plane but across it remains unknown. It is also often presumed individual GO monolayers contain large density nanoscale pinholes lead to considerable leakage plane. Here we show...
We demonstrate high performance ZnO TFTs with record field effect mobility 229 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V.s, on/off ratio exceeding 10 xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> (limited only by our simple device structure) and sub threshold swing (S) <;150 mV/dec, surpassing the of many reported amorphous Indium Gallium Zinc Oxide (a-IGZO) thin film transistors....
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Implementation of accurate neural network models in edge applications such as wearables is limited by the hardware platform due to constraints power/area. We highlight novel concepts reservoir computing that rely on a volatile three terminal solid electrolyte thin film synaptic transistor, whose conductance can be controlled gate and drain voltages enhance richness operate off-state. The proposed approach achieves an accuracy 94% image processing, significantly higher than equivalent based...