Nanowire (NW) devices, particularly the gate-all-around (GAA) CMOS architecture, have emerged as front-runner for pushing scaling beyond roadmap. These devices offer unique advantages over their planar counterparts which make them feasible an option 22 -nm and technology nodes. This paper reviews current status realizing GAA NW device structures applications in logic circuit nonvolatile memories. We also take a glimpse into of NWs ldquomore-than-Moorerdquo regime briefly discuss application...

Mixed carbon nanotube bundles (MCBs) are considered to be highly potential interconnect solutions in the current nanoscale regime. Different MCBs with random and spatial arrangements proposed based on placements of single- multiwalled nanotubes (CNTs) (SWNTs MWNTs) a bundle. Propagation delay dynamic crosstalk performances analyzed using modified equivalent single conductor model MCB topologies. Encouragingly, significant reduction propagation is observed for arrangement an wherein MWNTs...

Multiwalled carbon nanotube (MWCNT) and bundled single-walled (SWCNT) interconnect have provided potentially attractive solution in current deep submicrometer nanoscale technology. This letter presents a comparative analysis between the MWCNT SWCNT at different global lengths terms of crosstalk-induced time delay area by using three-line-bus architecture. Each line bus architecture is replaced RLC models bundled-SWCNT interconnects. The predicted middle (victim) when other two lines...

Physical dynamic reservoirs are well-suited for edge systems, as they can efficiently process temporal input at a low training cost by utilizing the short-term memory of device in-memory computation. However, two-terminal memristor-based limits duration inputs, resulting in more reservoir outputs per sample classification. Additionally, forecasting requires multiple devices (20-25) prediction single time step, and long-term reintroduction forecasted data new input, increasing system...

An accurate modelling hierarchy for mixed carbon nanotube (CNT) bundle interconnects is presented. Based on hierarchical modelling, different bundled structures are proposed arrangements of single-walled CNTs (SWCNTs) and multi-walled (MWCNTs). equivalent model CNT bundles has been developed by combination an single conductor (ESC) SWCNTs MWCNTs. Propagation delay under the effect dynamic crosstalk compared these bundles. It observed that crosstalk-induced time improves significantly...

In this letter, we investigate a novel vertical silicon nanowire-based (NW) complementary metal-oxide-semiconductor (CMOS) technology for logic applications. The performance and the behavior of two- single-wire CMOS inverters are simulated analyzed. We show that NW based offers reduction up to 50% in layout area, along with delay reductions (two wire) 30% (single compared fin-shaped field effect transistor (FinFET) technology. results has very high potential ultralow-power applications power...

The reliability of multigate metal-oxide-semiconductor (MOS) devices is an important issue for novel nanoscale complementary MOS (CMOS) technologies. We present analytic degradation model double-gate (DG) and gate-all-around (GAA) field-effect transistors (MOSFETs) in the presence localized interface charge. Furthermore, we consider effect channel mobile charge carriers that significantly enhances accuracy our model. In model, accurate definition threshold voltage terms minimum carrier...

In this paper, the analytical models of parasitic resistance and capacitance vertical nanowire (VNW) FET are presented, considering device structural asymmetry. These then used to analyze effect channel, source-drain extension lengths, diameter on VNW CMOS performance for 15 nm node. We find that asymmetry in structure (between top bottom electrodes) leads asymmetric resistances capacitances play an important role determining circuit delays. Thus our help quantify parasitics having Further,...

In the current study, novel four electrode-based impedimetric biosensors have been fabricated using photolithography techniques and utilized to evaluate cytotoxicity of tamoxifen on cervical cancer cell lines. The impedance was measured employing electric cell-substrate sensing (ECIS) method over frequency range 100 Hz 1 MHz. results obtained from indicate that caused a significant reduction in number HeLa cells electrode surfaces dose-dependent manner. Next, values recorded by compared with...

In this article, we study the field cycling behavior of ALD-deposited ferroelectric Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr O xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> with TiN as top and bottom electrodes on silicon substrate. We investigate effect temperature endurance, capacitance, leakage device. observe an insignificant wake-up attributed to nitrogen-rich interface between HZO film. also report increase in...

In this brief, we have analyzed the response of silicon-nanowire (Si-NW) gate-all-around (GAA) field-effect transistor to total ionizing dose (TID) effects and assessed impact single-event (SEEs) in simple inverter circuit built from such devices. The analysis radiation is carried out with 3-D technology computer-aided design simulations. Reliability n-channel p-channel Si-NW MOSFET investigated for TID gamma ray exposure. transient at device level are studied alpha particle heavy-ion...

FinFETs are poised to replace conventional MOSFETs at sub-22-nm technology nodes mainly due their relatively planar compatible fabrication process. It is well known that FinFET device parasitics critical for the propagation delay and power dissipation. However, a quantitative understanding of circuit design yet be attained. We report new extension transistor-induced capacitance shielding (ETICS) phenomenon. In this phenomenon, region forms transistor, which shields gate-extension fringing...

In this article, we investigate a novel technique to minimize row hammer (RH) fail in the saddle fin recessed channel access transistor (S-RCAT) at 1X dynamic random memory node. We propose selective introduction of low work function (WF) metal nanowire (MNW) gate metal/gate oxide (GOX) interface mitigate RH fail. Using 3-D TCAD simulations, analyze mechanism and its mitigation through use MNW. The improvement is shown due MNW gate-metal workfunction-difference induced energy valleys (EVs)...

Optimization of piezoelectric energy harvester (PEH) to convert the ambient vibrational into maximum electrical has been continued interest. The integration proof mass with optimum cantilever width significantly enhances output power PEH. In this paper, we propose an optimized design PEH that outperforms existing AlN-based in terms density. We analytically optimize of: 1) cantilever-to-harvester length and 2) (proof width) ratios for power. is fabricated using a novel scheme bottom electrode...

The channel tapering from top to bottom in vertical 3-D NAND is a major concern. This leads nonuniformity the string performance, including cell current (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">cell</sub> ) and threshold voltage (V xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> variation along string. In this article, we show that electric field due difference radius root cause behind VT For first time, propose novel techniques...

The processing of sequential and temporal data is essential to computer vision speech recognition, two the most common applications artificial intelligence (AI). Reservoir computing (RC) a branch AI that offers highly efficient framework for inputs at low training cost compared conventional Recurrent Neural Networks (RNNs). However, despite extensive effort, two-terminal memristor-based reservoirs have, until now, been implemented process by reading their conductance states only once, end...

A novel work-function modulation technique for dual (WF) metal gate DRAM access device is investigated to minimize the leakage current in transistor. Gate Induced Drain Leakage (GIDL) believed be most dominant off state from storage node junction. Due high doping side, lateral electric field near increases, which enhance GIDL. Increased GIDL puts limits on further scaling of cell. In this paper dependence work function has been with TCAD simulation. solution proposed as well possible...