Angélica Garzon‐Fontecha

ORCID: 0000-0001-9009-9734
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About
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Research Areas
  • ZnO doping and properties
  • Metal and Thin Film Mechanics
  • Thin-Film Transistor Technologies
  • Plasma Diagnostics and Applications
  • Semiconductor materials and devices
  • Gas Sensing Nanomaterials and Sensors
  • Diamond and Carbon-based Materials Research
  • MXene and MAX Phase Materials
  • Multiferroics and related materials
  • Transition Metal Oxide Nanomaterials
  • Advanced Sensor and Energy Harvesting Materials
  • Ferroelectric and Piezoelectric Materials
  • Copper-based nanomaterials and applications
  • Polymer Surface Interaction Studies
  • GaN-based semiconductor devices and materials
  • Advanced Photocatalysis Techniques
  • Hydrogels: synthesis, properties, applications
  • TiO2 Photocatalysis and Solar Cells
  • Radiation Effects in Electronics
  • Magnetic and transport properties of perovskites and related materials
  • Advanced Polymer Synthesis and Characterization
  • Graphene and Nanomaterials Applications

Universidad Nacional Autónoma de México
2014-2023

Center for Scientific Research and Higher Education at Ensenada
2017-2020

Universidad Autónoma de Baja California
2017

Cr, Nb, Cr/Nb, CrN x , NbN CrNbN, and (CrN/NbN) n structures were produced on Si glass substrates, using the d.c. magnetron sputtering technique. Compositional analysis, based binding energies of N, was carried out by means X‐ray photoelectron spectroscopy (XPS). Through Auger electron (AES), depth profiles obtained, allowing to demonstrate multilayers production. Surface morphological characteristics, as roughness grain size, evaluated atomic force microscopy (AFM), revealing very smooth...

10.1002/sia.6664 article EN Surface and Interface Analysis 2019-06-25

We present a study of electrical and optical properties nitrogen‐doped tin oxide thin films deposited on glass by the DC Magnetron Sputtering method. The deposition conditions to obtain p‐type were relative partial pressure between 7% 11% (N 2 and/or O ), total working 1.8 mTorr plasma power 30 W. oxidized after annealing at 250°C for minutes. X‐ray diffraction results showed that as‐deposited exhibit Sn tetragonal structure, annealing, they SnO structure. photoelectron spectroscopy presence...

10.1002/sia.6313 article EN Surface and Interface Analysis 2017-09-29

Non-stoichiometric NbxNy coatings, produced in a reactive sputtering process, were analyzed on the basis of their chemical composition (specifically, nitrogen concentration) and its relationship with electrical conductivity. The bonding configuration examined using X-ray photoelectron spectroscopy (XPS), revealing Nb–N bonds. stoichiometry variation dependence N2 flow was also analyzed, Auger electron (AES). Without exposing samples to air, normal behavior observed; meaning that...

10.3390/coatings9030196 article EN Coatings 2019-03-18

Tin oxide (SnO x ) has been widely used for the fabrication of transparent and flexible devices because its excellent optical electronic properties. In this work, we established a methodology synthesis SnO thin films with p‐type n‐type tunable conductivity by direct currecnt (DC) magnetron sputtering. The changed from to increasing relative oxygen partial pressure (ppO 2 4.8% 18.5% varying working between 1.8 2.5 mTorr. were annealed at 160°C, 180°C, 200°C 30 min promote formation desired...

10.1002/sia.6873 article EN Surface and Interface Analysis 2020-08-27

This paper reports the synthesis of Bi0.93Sm0.07FeO3 system by conventional method solid-state reaction using quenching at room temperature. X-ray diffraction characterization revealed a rhombohedric perovskite structure with spatial group R3c (161) and an impurity phase Bi2Fe4O9. The scanning electron microscopy images show formation homogeneous grains average size 3µm. energy dispersive Spectroscopy (EDS) microanalysis shows percentage samarium incorporated in bismuth ferrite. analysis...

10.1088/1742-6596/1247/1/012043 article EN Journal of Physics Conference Series 2019-06-01

In recent years, flexible electronics have been an area of considerable interest due to the development materials such as transparent semiconductor oxides, which are compatible with substrates. Herein, lithography and magnetron sputtering used fabricate a p–n diode SnO x thin films on polyimide substrate electrical characterization is performed by varying bending cycles. Using specific oxygen concentrations in reactive gas mixture system, p‐SnO 0.8 (8.0% ppO 2 ) n‐SnO 1.2 (18.5% substrates...

10.1002/pssa.202300316 article EN physica status solidi (a) 2023-06-10
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