A5029954771- Quantum and electron transport phenomena
- Semiconductor materials and devices
- Ion-surface interactions and analysis
- Quantum Computing Algorithms and Architecture
- Quantum Information and Cryptography
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Semiconductor Devices and Circuit Design
- Diamond and Carbon-based Materials Research
- Electron and X-Ray Spectroscopy Techniques
- Fluid Dynamics Simulations and Interactions
- Fluid Dynamics and Heat Transfer
- Surface Modification and Superhydrophobicity
- Electronic and Structural Properties of Oxides
- Veterinary Pharmacology and Anesthesia
- Semiconductor Quantum Structures and Devices
- X-ray Spectroscopy and Fluorescence Analysis
- Nuclear Materials and Properties
- Magnetic properties of thin films
- Silicon and Solar Cell Technologies
- Anesthesia and Sedative Agents
- Force Microscopy Techniques and Applications
- Graphene research and applications
- Anesthesia and Pain Management
The University of Melbourne
2016-2024
Centre for Quantum Computation and Communication Technology
2016-2024
University of Technology Sydney
2024
Quantum (Australia)
2021
University of Auckland
2016
Abstract Silicon chips containing arrays of single dopant atoms can be the material choice for classical and quantum devices that exploit donor spins. For example, group‐V donors implanted in isotopically purified 28 Si crystals are attractive large‐scale computers. Useful attributes include long nuclear electron spin lifetimes 31 P, hyperfine clock transitions 209 Bi or electrically controllable 123 Sb Promising architectures require ability to fabricate individual near‐surface with high...
Studies of water drop impacts on microstructured surfaces are important for understanding dynamic wetting rough surfaces, and developing related design principles. Here, high-speed imaging has been used to study asymmetries within the spreading phase following vertical at Weber numbers between 34 167. The eleven polydimethylsiloxane studied had micropillars arranged in square rectangular arrays, with feature sizes ranging from ∼5 μm ∼240 various pillar cross-sections, most cases supporting a...
Abstract Semiconductor spin qubits combine excellent quantum performance with the prospect of manufacturing devices using industry‐standard metal‐oxide‐semiconductor (MOS) processes. This applies also to ion‐implanted donor spins, which further afford exceptional coherence times and large Hilbert space dimension in their nuclear spin. Here multiple strategies are demonstrated integrated manufacture scale‐up donor‐based computers. 31 PF 2 molecule implants used triple placement certainty...
Already a building block of modern life, silicon is also poised to power the next leap in information technology, which quantum mechanical properties single impurities located just beneath its surface can be used create vastly more powerful computers. Here multinational team presents specialized microscope better understand inner workings such chips, by scanning finely focused beam ultralow-energy ions across surface. The tiny ``click'' that each ion makes when it hits chip detected and...
We describe an approach to quantum computer technology based on engineered single donor atoms implanted into silicon. exploit superposition and entanglement in potentially scalable nanoscale devices with just a phosphorus atom silicon nano-scale complementary metal-oxide-semiconductor device. The are sensitive the variation position of also, when cooled 100 mK, state donors. Over past two years we have fabricated incorporating 31P 20 nm deep isotopically enriched 28Si followed by rapid...
Spins in the `semiconductor vacuum' of silicon-28 ($^{28}$Si) are suitable qubit candidates due to their long coherence times. An isotopically purified substrate $^{28}$Si is required limit decoherence pathway caused by magnetic perturbations from surrounding $^{29}$Si nuclear spins (I=1/2), present natural Si (nat Si) at an abundance 4.67%. We enrich surface layers nat sputtering using high fluence $^{28}$Si$^-$ implantation. Phosphorus (P) donors implanted into one such layer with ~3000...
Abstract Diamond color centers with applications to single photon sources, quantum computation, and magnetic field sensing down the nanoscale have been investigated using ensembles of near‐surface implanted atoms. Deterministic ion implantation for ions stopping between 30 130 nm deep is demonstrated by configuring an electronic‐grade diamond substrate a biased surface graphene electrode connected charge sensitive electronics. The thin has negligible dead layer, so events are signaled from...
Abstract Semiconductor spin qubits combine excellent quantum performance with the prospect of manufacturing devices using industry-standard metal-oxide-semiconductor (MOS) processes. This applies also to ion-implanted donor spins, which further afford exceptional coherence times and large Hilbert space dimension in their nuclear spin. Here we demonstrate integrate multiple strategies manufacture scale-up donor-based computers. We use 31 PF 2 molecule implants triple placement certainty...
The attributes of group-V-donor spins implanted in an isotopically purified $^{28}$Si crystal make them attractive qubits for large-scale quantum computer devices. Important features include long nuclear and electron spin lifetimes $^{31}$P, hyperfine clock transitions $^{209}$Bi electrically controllable $^{123}$Sb spins. However, architectures scalable devices require the ability to fabricate deterministic arrays individual donor atoms, placed with sufficient precision enable high-fidelity...
Near-Surface Doping In article number 2103235, David N. Jamieson and co-workers report that single-crystal silicon can be configured with arrays of single, near-surface, dopant atoms using on-chip electrodes low-noise charge-sensitive electronics to register single-ion implants. Suitable for integration a nanostencil scanner localize the implants, system makes use signal electron–hole pairs generated as ions dissipate their kinetic energy in crystal. The part an engineering strategy...
Colour centre ensembles in diamond have been the subject of intensive investigation for many applications including single photon sources quantum communication, computation with optical inputs and outputs, magnetic field sensing down to nanoscale. Some these are realised a or randomly distributed chips, but most demanding application large-scale computer will require ordered arrays. By configuring an electronic-grade substrate biased surface graphene electrode connected charge-sensitive...
Semiconductor spin qubits combine excellent quantum performance with the prospect of manufacturing devices using industry-standard metal-oxide-semiconductor (MOS) processes. This applies also to ion-implanted donor spins, which further afford exceptional coherence times and large Hilbert space dimension in their nuclear spin. Here we demonstrate integrate multiple strategies manufacture scale-up donor-based computers. We use $^{31}$PF$_{2}$ molecule implants triple placement certainty...
The demonstration of universal quantum logic operations near the fault-tolerance threshold establishes ion-implanted near-surface donor atoms as a plausible platform for scalable computing in silicon. next technological step forward requires deterministic fabrication method to create large-scale arrays donors, featuring few hundred nanometre inter-donor spacing. Here, we explore feasibility this approach by implanting low-energy ions into silicon devices an enlarged 60x60 $μ$m sensitive area...