A5027366583- Quantum and electron transport phenomena
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Respiratory Support and Mechanisms
- Nosocomial Infections in ICU
- Surface and Thin Film Phenomena
- Sepsis Diagnosis and Treatment
- Quantum Information and Cryptography
- Semiconductor Quantum Structures and Devices
- Airway Management and Intubation Techniques
- Hemodynamic Monitoring and Therapy
- Advanced Electron Microscopy Techniques and Applications
- Pneumonia and Respiratory Infections
- Quantum Computing Algorithms and Architecture
- Electronic and Structural Properties of Oxides
- Antibiotic Resistance in Bacteria
- Microfluidic and Bio-sensing Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Molecular Junctions and Nanostructures
- Mechanical and Optical Resonators
- Microfluidic and Capillary Electrophoresis Applications
- Magnetic properties of thin films
- Physics of Superconductivity and Magnetism
- Tracheal and airway disorders
- Antibiotic Use and Resistance
Centre for Quantum Computation and Communication Technology
2015-2025
UNSW Sydney
2015-2025
Centre Hospitalier Universitaire de Lille
2012-2024
Hôpital Roger Salengro
2014-2024
Quantum (Australia)
2022
Bayer (United States)
2017-2018
Medtronic (Ireland)
2017-2018
Université de Lille
2016-2018
MSD (Austria)
2017
CEA Grenoble
2011-2015
Objective: To investigate whether the collapsibility index of inferior vena cava recorded during a deep standardized inspiration predicts fluid responsiveness in nonintubated patients. Design: Prospective, nonrandomized study. Setting: ICUs at general and university hospital. Patients: Nonintubated patients without mechanical ventilation ( n = 90) presenting with sepsis-induced acute circulatory failure considered for volume expansion. Interventions: We assessed hemodynamic status baseline...
With the development of single-atom transistors, consisting single dopants, nanofabrication has reached an extreme level miniaturization. Promising functionalities for future nanoelectronic devices are based on possibility coupling several these dopants to each other. This already allowed perform spectroscopy donor state by d.c. electrical transport. The next step, namely manipulating a electron over two remains challenge. Here we demonstrate pumping through phosphorus donors in series...
We investigate the gate-induced onset of few-electron regime through undoped channel a silicon nanowire field-effect transistor. By combining low-temperature transport measurements and self-consistent calculations, we reveal formation one-dimensional conduction modes localized at two upper edges channel. Charge traps in gate dielectric cause electron localization along these edge modes, creating elongated quantum dots with characteristic lengths ∼10 nm. observe single-electron tunneling...
Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from reduced hyperfine interaction, and fast electrically driven qubit manipulation. Here we show that silicon-nanowire field-effect transistor based on state-of-the-art silicon-on-insulator technology can be operated as few-hole dot. A detailed magnetotransport study of the first accessible hole reveals g-factor with unexpectedly...
We report on microwave-driven coherent electron transfer between two coupled donors embedded in a silicon nanowire. By increasing the microwave frequency we observe transition from incoherent to driving revealed by emergence of Landau-Zener-Stückelberg quantum interference pattern measured current through donors. This is fitted extract characteristic parameters double-donor system. In particular estimate charge dephasing time 0.3±0.1 ns, comparable other types charge-based two-level systems....
Whether the respiratory changes of inferior vena cava diameter during a deep standardized inspiration can reliably predict fluid responsiveness in spontaneously breathing patients with cardiac arrhythmia is unknown.This prospective two-center study included nonventilated arrhythmic infection-induced acute circulatory failure. Hemodynamic status was assessed at baseline and after volume expansion 500 mL 4% gelatin. The diameters were measured transthoracic echocardiography using...
Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates reliable quantum computing technologies. The proposal to use nuclear electronic spins of donor atoms silicon, introduced by Kane 1998, sparked a new research field focused on the precise individual impurity devices, utilising scanning tunnelling microscopy ion implantation. This roadmap article reviews advancements 25 years since Kane's proposal,...
Abstract Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates reliable quantum computing technologies. The proposal to use nuclear electronic spins of donor atoms silicon, introduced by Kane 1998, sparked a new research field focused on the precise individual impurity devices, utilising scanning tunnelling microscopy ion implantation. This roadmap article reviews advancements 25 years since Kane’s...
Spin qubits in silicon are strong contenders for the realization of a practical quantum computer. Single- and two-qubit gates have shown fidelities above fault-tolerant threshold, entanglement three has been achieved. Furthermore, high-fidelity operation algorithms is possible. Here we implement four-qubit processor with all control threshold. We demonstrate three-qubit Grover's search algorithm ~95% probability finding marked state. To this end, fabricate from phosphorus atoms...
We measure a large valley-orbit splitting for shallow isolated phosphorus donors in silicon gated nanowire. This is close to the bulk value and well above previous reports nanostructures. It was determined using double dopant transport spectroscopy which eliminates artifacts induced by environment. Quantitative simulations taking into account position of with respect $\mathrm{Si}/{\mathrm{SiO}}_{2}$ interface electric field wire show that values found are consistent device geometry.
The ampere, the basic measurement standard for electric current, is still defined based on electromagnetic force between two parallel current-carrying wires. To achieve a quantum of current electron counting, an extremely accurate pump with high yield in nanoampere range required. Researchers now present proof-of-principle demonstration such pump.
In Brief Objective: To determine the safety of a conservative approach to treating severe caustic injury in patients lacking clinical and biochemical signs transmural necrosis. Background: Esophagogastrectomy is thought limit progression upper gastrointestinal tract observed upon initial endoscopic examination. However, evaluation depth spread necrosis challenging may lead unnecessary gastrectomy. Methods: From January 2002 December 2008, 70 were classified as having stage III gastric an...
Abstract Tunneling is a fundamental quantum process with no classical equivalent, which can compete Coulomb interactions to give rise complex phenomena. Phosphorus dopants in silicon be placed atomic precision address the different regimes arising from this competition. However, they exploit wavefunctions relying on crystal band symmetries, tunneling are inherently sensitive to. Here we directly image lattice-aperiodic valley interference between coupled atoms using scanning microscopy. Our...
Single spin qubits based on phosphorus donors in silicon are a promising candidate for large-scale quantum computer. Despite long coherence times, achieving uniform magnetic control remains hurdle scale-up due to challenges high-frequency field at the nanometre scale. Here, we present proposal flopping-mode electric dipole resonance qubit combined electron and nuclear states of double donor dot. The key advantage utilizing donor-based system is that can engineer number nuclei each By...
A dual mode device behaving either as a field-effect transistor or single electron (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an island is accumulated under front of (SET regime), obtained by pinching off bottom channel with negative voltage. The gradual transition between these two cases observed. This function uses both vertical and horizontal tunable potential gradients in non-overlapped channel.
Ventilator-associated pneumonia (VAP) is the most common ICU-acquired infection. Recently, incidence of extended-spectrum beta-lactamase producing Enterobacteriaceae (ESBLE) has substantially increased in critically ill patients. Identifying patients at risk for VAP related to ESBLE could be helpful improve rate appropriate initial antibiotic treatment, and reduce unnecessary exposure carbapenems. The primary objective was identify factors ESBLE. Secondary determine impact on outcome...
Two-electron states bound to donors in silicon are important for both two-qubit gates and spin readout. We present a full configuration interaction technique the atomistic tight-binding basis capture multielectron exchange correlation effects taking into account band structure of atomic-scale granularity nanoscale device. Excited $s$-like ${A}_{1}$ symmetry found strongly influence charging energy negative donor center. apply on subsurface dopants subjected gate electric fields show that...
The ability to control single dopants in solid-state devices has opened the way towards reliable quantum computation schemes. In this perspective it is essential understand impact of interfaces and electric fields, inherent address coherent electronic manipulation, on atomic scale properties. This requires both fine energetic spatial resolution energy spectrum wave-function, respectively. Here we present an experiment fulfilling conditions: perform transport donors silicon close a vacuum...
Exchange coupling is a key ingredient for spin-based quantum technologies since it can be used to entangle spin qubits and create logical qubits. However, the influence of electronic valley degree freedom in silicon on exchange interactions presently subject important open questions. Here we investigate valleys coupled donor/quantum dot system, basic building block recently proposed schemes robust information processing. Using scanning tunneling microscope tip position with sub-nm precision,...