Abstract We report an effective approach to reduce defects at a SiC/SiO 2 interface. Since oxidation of SiC may inevitably lead defect creation, the idea is form interface without oxidizing SiC. Our method consists four steps: (i) H etching SiC, (ii) Si deposition, (iii) low-temperature (∼750 °C) SiO , and (iv) high-temperature (∼1600 N annealing introduce nitrogen atoms. The state density estimated by high (1 MHz)–low in order 10 cm −2 eV −1 two orders magnitude lower than that formed oxidation.

Abstract Free electron mobility ( μ free ) in 4H-SiC(0001) MOSFETs with gate oxides annealed NO or POCl 3 was calculated a wide range of effective normal field E eff from 0.02 to 2 MV cm −1 , taking account scattering by fixed charges and trapped electrons. The present calculation indicates that the Hall high- region experimentally obtained for NO-annealed (14 V s at 1.1 is much lower than -annealed (41 due severe Coulomb electrons very high density interface states.

Abstract The effects of a process that minimizes oxidation SiC on the channel mobility heavily doped 4H-SiC (0001), (112̄0) and (11̄00) metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated. High mobilities obtained for these MOSFETs even when acceptor concentration p-body ( N A ) exceeded 1 × 10 18 cm −3 . (0001) reached 25 2 V −1 s = ). fabricated (11 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mover accent="true"> <mml:mrow>...

ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTSELECTIVE ADSORPTION STUDIES BY RADIO TRACER TECHNIQUE: THE SELECTIVE BETWEEN CALCIUM AND SODIUM IONS AT IONIZED INTERFACEKōzō Shinoda and Kōji ItōCite this: J. Phys. Chem. 1961, 65, 9, 1499–1502Publication Date (Print):September 1, 1961Publication History Published online1 May 2002Published inissue 1 September 1961https://pubs.acs.org/doi/10.1021/j100905a006https://doi.org/10.1021/j100905a006research-articleACS PublicationsRequest reuse...

We report that annealing in low-oxygen-partial-pressure (low-pO2) ambient is effective reducing the interface state density (DIT) at a SiC (0001)/SiO2 near conduction band edge (EC) of SiC. The DIT value EC − 0.2 eV estimated by high (1 MHz)-low method 6.2 × 1012 eV−1 cm−2 as-oxidized sample, which reduced to 2.4 subsequent O2 (0.001%) 1500 °C, without nitridation. Although pure Ar induces leakage current oxide, low-pO2 does not degrade oxide dielectric property (breakdown field ∼10.4 MV cm−1).

In the present study, we characterize nature of interface states in silicon carbide (SiC) metal–oxide–semiconductor (MOS) systems by analyzing electrical characteristics MOS field effect transistors (MOSFETs) based on results numerical calculations. calculation, potential distributions and energy sub-bands were calculated solving Poisson Schrödinger equations, respectively. As a result, demonstrate that defect-induced localized levels bandgap are subjected to quantum confinement at inversion...

Abstract Both n- and p-channel SiC MOSFETs, the gate oxides of which were annealed in NO, with various body doping concentrations fabricated. Despite large difference bulk mobility between electrons (1020 cm 2 V −1 s ) holes (95 ), maximum field-effect heavily-doped (∼5 × 10 17 −3 MOSFETs was 10.3 for n-channel 7.5 devices. The measurements using bias revealed that both is dominated by effective normal field rather than doping.

Abstract The combination of NO annealing and subsequent post-nitridation (PNA) in CO 2 ambient for SiO /SiC structures has been demonstrated to be effective obtaining both high channel mobility superior threshold voltage stability SiC-based metal-oxide-semiconductor field-effect transistors (MOSFETs). N atoms on the side interface incorporated by annealing, which are plausible causes charge trapping sites, could selectively removed -PNA at 1300 °C without oxidizing SiC. was also compensating...

Abstract Hall effect measurements were conducted for MOSFETs with and without post-oxidation-annealing (POA) fabricated on the p-body doping in a wide range to vary effective normal field ( E eff ). The mobility μ ) high- region of annealed phosphoryl chloride = 41 cm 2 V −1 s at 1.1 MV is much higher than that nitric oxide (NO) 14 ), suggesting trapped electrons act as strong Coulomb scattering centers NO POA.

Molybdenum trioxide films were sputter-deposited on quartz substrates at various substrate temperatures and discharge gas pressures. The annealed in air 450°C. Scanning electron microscopy showed that fine flakes formed the deposited 300°C, while surface of room temperature was smooth. After annealing, former grew, latter films, a layered structure formed. X-ray diffraction patterns every film composed orthorhombic MoO 3 crystallites. highest sensitivity fastest response to NO 2 observed...

The purpose of this study was to investigate the immediate effects assisted and resisted training using different weight balls on ball speed accuracy in baseball pitching. Eight male university players were assigned as subjects. experiment used a standard 145-gram two heavier or lighter with weights increased decreased by 10% respectively. subjects required pitch these and/or either six eighteen times under trial conditions: 1) pitching weighted only, 2) lightened 3) 4) three kinds order...

Recent progress in mobility characterization, junction breakdown, and MOS interface of SiC is reviewed. A high electron 1,210 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs was attained along the <tex xmlns:xlink="http://www.w3.org/1999/xlink">$c$</tex> -axis. An unusually small impact ionization coefficient c-axis gives this material an artificially critical electric field (2–5 MV/cm). By excluding oxidation while adopting H2...

Acid diffusion during the post-exposure bake of chemically amplified resists (CARs) is a major contributing factor to line width roughness (LWR) and resolution limits at 32 nm node beyond. To overcome these limitations, non-CAR materials are becoming more attractive because acid eliminated. We have therefore focused our effort on synthesis copolymers that both diacyldiazo side chain unit as well hexafluoroalcohol unit. This copolymer shows better contrast than containing lactone units due...

Abstract Phosphorus treatment, which can substantially reduce the interface state density ( D it ), was used to investigate impact of on effective channel mobility μ eff ) 4H-SiC (0001) metal-oxide-semiconductor field-effect transistors (MOSFETs). A high 126 cm 2 V −1 s , exceeds reported phonon-limited 83 determined from Hall nitridation-treated MOSFETs, at a normal field 0.57 MV obtained in MOSFETs fabricated high-purity semi-insulating substrate room temperature. This may be caused by...

A centrifuge model test with similitude of 1/20 is carried out to clarify the inelastic response character-istics reinforced concrete members in culvert type underground structure. Numerical analysis simulating confirm applicability numerical procedure considering material non-linearity. It concluded that member miniature similar actual mechanical properties and yielding reinforcing bars was found under applied strong motions. The present had possibility predicting soil-structure interaction...

The purpose of this study was to investigate the survival removable partial dentures with a mandibular bilateral free end saddle (BFES) and abutment teeth in clinical setting. Only BFES were included (10 or fewer present teeth, than 4 occlusal units). endpoints replacement denture loss teeth. A total 128 595 analyzed. Nineteen had be replaced during observation period (mean duration: 11.4±6.9 years; range: 3 36 years). According Kaplan-Meier analysis, rate 93.2% at 10 years 68.6% 20 years....

Abstract The temperature dependence of Hall mobility ( μ ) 4H-SiC(11 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mover accent="true"> <mml:mn>2</mml:mn> <mml:mo>¯</mml:mo> </mml:mover> </mml:math> 0) and (1 <mml:mn>1</mml:mn> 00) metal-oxide-semiconductor field-effect transistors (MOSFETs) with the gate oxides annealed in NO is compared that MOSFETs on (0001) or POCl 3 . Coulomb scattering due to trapped electrons, which reported be significant NO, may...