A5036086718- Silicon Carbide Semiconductor Technologies
- Electromagnetic Compatibility and Noise Suppression
- Thin-Film Transistor Technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- HVDC Systems and Fault Protection
- Organic Electronics and Photovoltaics
- Conducting polymers and applications
- Induction Heating and Inverter Technology
- Advanced Sensor and Energy Harvesting Materials
- Electrostatic Discharge in Electronics
Foundation for Research and Technology Hellas
2021
Kyoto University
2020-2021
FORTH Institute of Electronic Structure and Laser
2013-2017
Aristotle University of Thessaloniki
2017
The impact ionization coefficients along the (112̅0) direction in 4H-SiC were extracted by analyzing photocurrent of mesa epitaxial p-n diodes with punchthrough (PT) structures fabricated on (112̅0). Compared (0001), coefficient for electrons is much higher, whereas holes similar. As a result, calculated critical electric field strength approximately 21% lower than that (0001). This strong anisotropy electron discussed taking account unique conduction band structure. validated comparing...
Recent progress in mobility characterization, junction breakdown, and MOS interface of SiC is reviewed. A high electron 1,210 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs was attained along the <tex xmlns:xlink="http://www.w3.org/1999/xlink">$c$</tex> -axis. An unusually small impact ionization coefficient c-axis gives this material an artificially critical electric field (2–5 MV/cm). By excluding oxidation while adopting H2...
A comparative study of the simulated breakdown voltage 4H-SiC devices has been conducted for most widely used impact ionization models (Selberherr, Hatakeyama), based on experimental data pn diodes. The effect mesh density examined. TCAD simulations employing default commercial simulators parameters did not converge to a value close experimentally observed as is increased. Various parameters, reported in bibliography, have examined instead commercial-TCAD-simulators ones. Simulations with...
SiC JFETs may have the lowest overall losses of switching devices and can operate at temperatures over 400 °C. Over different junction field-effect transistor (JFET) designs, trenched implanted (TI) gate vertical JFET (TI-VJFET) is very attractive since it on-resistance its fabrication does not require epitaxial overgrowth or multiple angled implantation. 4H-SiC TI-VJFETs been fabricated with self-aligned nickel silicide source contacts using a process sequence that greatly reduces...
We used a commercial TCAD tool in order to simulate cylindrical Textile Organic Field Effect Transistor (TOFET) and study the impact of different critical region sizes its electrical characteristics. The simulation was based on models parameters similar those previous simulations Thin Film Transistors. have seen that it is potentially feasible build transistors which can operate low voltages by using typical materials. Even if some selected materials be replaced others more suitable for...
The process technology for the fabrication of 4H-SiC trenched-implanted-gate 4H–SiC vertical-channel JFET (TI-VJFET) has been developed. optimized TIVJFETs have fabricated with self-aligned nickel silicide source and gate contacts using a sequence that greatly reduces complexity as it includes only four lithography steps. A source-pillars sidewall oxidation subsequent removal metallization from top oxide ensured isolation between source. Optimum planarization pillars performed by cyclotene...
In this paper we examine the possibility to simulate and study behaviour of a fiber-based Textile Transistor in commercial TCAD system. We also capability such transistors operate sufficiently low voltages, aiming potential realization low-voltage wearable textiles future. have seen that it is potentially feasible build which can voltages by using typical materials. Even if some selected materials be replaced others more suitable for practical use textile industry, simulation good starting...