A5052227001- 2D Materials and Applications
- Semiconductor Quantum Structures and Devices
- Graphene research and applications
- Chalcogenide Semiconductor Thin Films
- Perovskite Materials and Applications
- Quantum and electron transport phenomena
- Supercapacitor Materials and Fabrication
- MXene and MAX Phase Materials
- Advanced Chemical Physics Studies
- Boron and Carbon Nanomaterials Research
- Laser-Matter Interactions and Applications
- Nanowire Synthesis and Applications
- Crystallography and Radiation Phenomena
- Laser Material Processing Techniques
- Semiconductor materials and interfaces
- Dielectric materials and actuators
- Terahertz technology and applications
- Diamond and Carbon-based Materials Research
- Thermal properties of materials
- Physics of Superconductivity and Magnetism
- Gold and Silver Nanoparticles Synthesis and Applications
- GaN-based semiconductor devices and materials
- Advanced Semiconductor Detectors and Materials
- Graphene and Nanomaterials Applications
- Topological Materials and Phenomena
Keele University
2021-2024
Henry Royce Institute
2021
University of Manchester
2021
University of Nottingham
2011-2020
Institute for Condensed Matter Physics of the National Academy of Sciences of Ukraine
2020
We present an overview of the main techniques for production and processing graphene related materials (GRMs), as well key characterization procedures. adopt a 'hands-on' approach, providing practical details procedures derived from literature authors' experience, in order to enable reader reproduce results.
We demonstrate that γ-InSe and the α, β γ phases of In2Se3 can be grown epitaxially on ε-GaSe substrates using a physical vapour transport method. By exploiting temperature gradient within tube furnace, we grow selectively different InxSey depending position substrate furnace. The uniform cleaved surface enables epitaxial growth layers, which are aligned over large areas. epilayers characterised Raman, photoluminescence, x-ray photoelectron electron dispersive spectroscopies. Each phase...
We demonstrate that β-In2Se3 layers with thickness ranging from 2.8 to 100 nm can be grown on SiO2/Si, mica and graphite using a physical vapour transport method. The are chemically stable at room temperature exhibit blue-shift of the photoluminescence emission when layer is reduced, due strong quantum confinement carriers by boundaries material. characterised Raman spectroscopy x-ray diffraction which we confirm lattice constants c = 28.31 ± 0.05 Å 3.99 0.02 Å. In addition, these show high...
Exploitation of two-dimensional (2D) van der Waals (vdW) crystals can be hindered by the deterioration crystal surface over time due to oxidation. On other hand, existence a stable oxide at room temperature offer prospects for several applications. Here we report on chemical reactivity γ-InSe, recent addition family 2D vdW crystals. We demonstrate that, unlike materials, InSe nanolayers chemically under ambient conditions. However, both thermal- and photo-annealing in air induces oxidation...
Room temperature electroluminescence from semiconductor junctions is demonstrated. The are fabricated by the exfoliation and direct mechanical adhesion of InSe GaSe van der Waals layered crystals. Homojunction diodes formed layers p‐ n‐type exhibit at energies close to bandgap energy (Eg = 1.26 eV). In contrast, heterojunction combining p‐type emit photons lower energies, which attributed generation spatially indirect excitons a staggered valence band lineup for holes GaSe/InSe interface....
Abstract The miniaturization of ferroelectric devices offers prospects for non-volatile memories, low-power electrical switches and emerging technologies beyond existing Si-based integrated circuits. An class ferroelectrics is based on van der Waals (vdW) two-dimensional materials with potential nano-ferroelectrics. Here, we report semiconductor junctions (FSJs) in which the vdW α -In 2 Se 3 embedded between two single-layer graphene electrodes. In these two-terminal devices, polarization...
The increasing role of two-dimensional (2D) devices requires the development new techniques for ultrafast control physical properties in 2D van der Waals (vdW) nanolayers. A special feature heterobilayers assembled from vdW monolayers is femtosecond separation photoexcited electrons and holes between neighboring layers, resulting formation Coulomb force. Using laser pulses, we generate a 0.8 THz coherent breathing mode MoSe2/WSe2 heterobilayers, which modulates thickness heterobilayer should...
Abstract The ability of a material to conduct heat influences many physical phenomena, ranging from thermal management in nanoscale devices thermoelectrics. Van der Waals 2D materials offer versatile platform tailor transfer due their high surface‐to‐volume ratio and mechanical flexibility. Here, the properties indium selenide (InSe) are studied by scanning microscopy. electrical conductivity, broad‐band optical absorption, flexibility InSe accompanied an anomalous low conductivity (κ). This...
Solid polymer electrolytes (SPEs) are the key to improving electrochemical devices' energy density and safety. In recent years, natural polymers have received tremendous attention due latest advances in green technology for a sustainable future. Herein, SPEs based on 49 % methyl grafted rubber (MG49-NR) sodium trifluoromethanesulfonate (Na(CF3SO3) – NaTF) salt were prepared characterized optimize their performance. The composition MG49-NR: NaTF = 1:0.5 (by weight) shows highest room...
Abstract Ferroelectricity at the nanometre scale can drive miniaturisation and wide application of ferroelectric devices for memory sensing applications. The two-dimensional van der Waals (2D-vdWs) ferroelectrics CuInP 2 S 6 (CIPS) has attracted much attention due to its robust ferroelectricity found in thin layers room temperature. Also, unlike many 2D ferroelectrics, CIPS is a band gap semiconductor, well suited use as gate field-effect transistors (FETs). Here, we report on hybrid FET...
We show that the dissociation of N-H complex in hydrogenated III-N-Vs can be laser activated at temperatures are significantly smaller than those (>200 \ifmmode^\circ\else\textdegree\fi{}C) required for thermal due to a resonant photon absorption by complex. This phenomenon provides mechanism profiling band-gap energy growth plane with submicron spatial resolution and high accuracy; profiles erasable alloys rehydrogenated making any nanoscale in-plane profile rewritable.
We use a focussed laser beam to control the electronic activity of N- and H-atoms in dilute nitride Ga(AsN)/GaAs quantum well. Our approach yields submicron resolution spatial manipulation properties can provide an alternative method masking techniques for H-defect engineering in-plane patterning band gap energy.
Coherent x-ray diffractive imaging is a nondestructive technique that extracts three-dimensional electron density and strain maps from materials with nanometer resolution. It has been utilized for in range of applications, significant potential buried nanostructures functional devices. Here, we show coherent able to bring new understanding lithography-based nanofabrication process engineering the optical properties semiconducting GaAs 1-y N y on substrate. This allows us test reliability...
We report a comparative synchrotron radiation x-ray diffraction study of GaAs1−yNy micro-structures obtained by two different patterning methods: spatially selective H incorporation achieved using H-opaque masks and removal attained laser writing. These methods are emerging as original routes for fabrication micro- nano-structures with in-plane modulation the bandgap energy. By measuring out-of-plane lattice parameters, we find that both approaches largest part micro-structure volume remains...
We report on the fabrication of a micrometer-size movable light emitting area in GaAs/AlAs quantum well resonant tunneling p-i-n diode. The spatial position shifts linearly with increasing applied bias, up to 30 μm for bias increment 0.2 V. Also, simultaneous injection both electrons and holes into states is achieved at specific positions diode, thus resulting tenfold increase electroluminescence intensity.
Transition metal dichalcogenides have been extensively studied in recent years because of their fascinating optical, electrical, and catalytic properties. However, low-cost, scalable production remains a challenge. Aerosol-assisted chemical vapor deposition (AACVD) provides new method for thin film growth. In this study, we demonstrate the growth molybdenum disulfide (MoS
Abstract Highly doped semiconductors (HDSCs) are promising candidates for plasmonic applications in the mid‐infrared (MIR) spectral range. This work examines a recent addition to HDSC family, dilute nitride alloy In(AsN). Postgrowth hydrogenation of In(AsN) creates highly conducting channel near surface and plasmon polariton detected by attenuated total reflection techniques. The suppression effects following photoannealing semiconductor is attributed dissociation NH bond. offers new routes...
We report on the tuning of spectral response superlattice (SL) diodes based dilute nitride Ga(AsN) alloys by post-growth hydrogenation. Hydrogen is incorporated into where it neutralizes electronic activity nitrogen forming N-H complexes. exploit controlled thermal dissociation complexes to tune energy SL photocurrent absorption and electroluminescence emission; also, annealing a submicron spot with focused laser beam we create preferential path for injection carriers, thus activating...
Abstract Supercapacitors are at the forefront of energy storage devices due to their ability fulfill quick power requirements. However, safety and cost important parameters for real‐world applications. Green materials‐based electrodes electrolytes can make them safer cost‐effective. Herein, a supercapacitor based on methyl‐grafted natural rubber/salt‐based electrolyte graphite (NG)‐based fabricated characterized. Zinc trifluoromethanesulfonate [Zn(CF 3 SO ) 2 ] is used as salt electrolyte. A...