- Thin-Film Transistor Technologies
- ZnO doping and properties
- Semiconductor materials and devices
- Nanowire Synthesis and Applications
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Fiber Optic Sensors
- Photonic and Optical Devices
- Silicon and Solar Cell Technologies
- Electronic Packaging and Soldering Technologies
- Transition Metal Oxide Nanomaterials
- CCD and CMOS Imaging Sensors
- Silicon Nanostructures and Photoluminescence
- Analytical Chemistry and Sensors
- GaN-based semiconductor devices and materials
- 3D IC and TSV technologies
- Ga2O3 and related materials
- Perovskite Materials and Applications
- Semiconductor Lasers and Optical Devices
- Organic Light-Emitting Diodes Research
- Metal and Thin Film Mechanics
- Advanced Sensor and Energy Harvesting Materials
- Quantum Dots Synthesis And Properties
- Liquid Crystal Research Advancements
- Electrical and Thermal Properties of Materials
- Silicon Carbide Semiconductor Technologies
South China University of Technology
2016-2025
Beijing Jiaotong University
2022-2024
University of Hong Kong
2014-2023
Hong Kong University of Science and Technology
2014-2023
Chongqing Medical University
2022-2023
The Affiliated Yongchuan Hospital of Chongqing Medical University
2022-2023
Suzhou University of Science and Technology
2023
North China Electric Power University
2022
Guangzhou Experimental Station
2022
University of Oxford
2009-2021
The use of multimode fibers in mode division multiplexed space-division multiplexing systems offers one solution to the capacity limitations single-mode fiber transmission. Passive components control individual modes few-mode (FMF) are key elements build more complex modules and necessary for a high performance system. Fiber-based converters important FMF mux/demux, long-period gratings have been investigated provide conversion two- four-mode fibers. A method separate monitor real time is...
Indium-tin-zinc-oxide (ITZO) as the channel layer grown by co-sputtering of ZnO target and ITO in bottom gate thin-film transistors (TFTs) is proposed this work. The microstructure optical properties ITZO thin films at different annealing temperatures were analyzed. impact various on TFT performance characteristics was systematically investigated well. It found that with temperature 300 °C exhibits excellent electrical a high saturation field-effect mobility (μ sat) 27.4 cm2 V-1 s-1, low...
ABSTRACT A structure for a low input impedance current buffer transimpedance amplifier (CBTIA) is presented, which holds great potential flexible bioelectronic applications requiring high linearity sensing and transmission. Based on this structure, tunable CBTIA circuits are implemented. The former utilizes sink mode, where the voltage at drain of common gate transistor fed back to in order achieve impedance. self‐biasing optimization (SBO) technique proposed self‐regulation headroom each...
Abstract Abstract
The channel and source-drain contact noise in Indium-Tin-Zinc-Oxide (ITZO) TFTs are measured simulated using the BSIM-BULK model. The performance of ITZO is primarily dominated by 1/f noise. At low gate voltages, low-frequency (LFN) noise, which can be explained McWhorter’s (∆N) theory. drain current power spectral density (SID) a function voltage current, reflecting distribution at different frequencies. As increases, slope normalized SID with effective changes...
Abstract A single device with a variety of capabilities is highly attractive for the increasing demands complex and multifunctional optoelectronics. hybrid heterojunction formed between CsPbBr 3 halide perovskite chalcogenide quantum dots demonstrated. The served as an asymmetric active layer allows not only charge separation/exciton dissociation in benign process, but also carrier injection/recombination suppression bulk interfacial nonradiative recombination. An individual incorporating...
In this paper, the properties of hybrid-phase microstructural indium tin oxide-stabilized ZnO thin films and relevant high-performance thin-film transistors (TFTs) were systematically investigated. The optically extracted Urbach energy revealed that such owned less band-tail state trapping in comparison with corresponding amorphous films. This was determined by better atomic arrangement might realize higher drift mobility theoretically. influence deposition parameters as oxygen partial...
Abstract Electroluminescent devices based on metal halide perovskites have attracted extensive attention owing to their high external quantum efficiency, excellent color purity, and inexpensive solution process. So far, efforts been made improve the efficiency of monochromatic perovskite light‐emitting diodes (LEDs). However, multicolor perovskite‐based LEDs are seldom studied. Here, an individual device capable emission in response passage electric bias is demonstrated. With rational design...
Abstract Polarization emission from halide perovskite is expected to bring a lot of benefits for next‐generation displays, such as cost down, wide color gamut, and structure simplification. In this work, strong linearly polarized luminescence emissive perovskites modulated by photoaligned azobenzene dye AD1 demonstrated. The functionalized thin films not only exhibit exceptionally high degree polarization (DOP) 86.2–93.1% red, green, blue emission, but also promise an improved environmental...
Self-aligned top-gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with phosphorusdoped source/drain regions are developed in this letter. The resulting a-IGZO TFT exhibits high thermal stability and good electrical performance, including field-effect mobility of 5 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V · s, a threshold voltage 5.6 V, subthreshold swing 0.5 V/dec, an on/off current ratio 6 × 10...
Novel bridged-grain (BG) technique is applied in the fabrication of low-temperature solid-phase-crystallized polycrystalline-silicon thin-film transistors. As a result improved current flow and reduction high drain electric field, subthreshold slope, threshold voltage, maximum field-effect mobility, leakage current, on-off ratio are greatly improved. Mechanisms BG conduction studied detail.
Self-aligned top-gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with source/drain (S/D) regions doped by implanted arsenic are developed in this letter. The resulting a-IGZO TFTs exhibit much better thermal stability than those S/D hydrogen or argon plasma. They also show good electrical performance, including field-effect mobility of 12 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V·s, threshold...
Low-frequency noise (LFN) is investigated in a set of indium-zinc-oxide thin-film transistors (IZO TFTs) with fixed channel width ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$W$ </tex-math></inline-formula> = notation="LaTeX">$10~\mu \text{m}$ ) and different lengths notation="LaTeX">$L\,\,=10$ , 20, 30, notation="LaTeX">$40~\mu from sub-threshold, linear to saturation regions. The drain current power...
In this paper, the ITO-stabilized ZnO thin films with a hybrid-phase microstructure were introduced, where number of nanocrystals embedded in an amorphous matrix. The microstructural and optical properties investigated. It was found that grain boundary native defect issues pristine polycrystalline could be well suppressed. Meanwhile, such also possessed relatively smooth surface high transmittance visible range. Afterwards, corresponding staggered top-gate thin-film transistors (TFTs)...
In this article, we report continuous and large-area molybdenum disulfide (MoS2) growth on a SiO2/Si substrate by radio frequency magnetron sputtering (RFMS) combined with sulfurization. The MoS2 film was synthesized using two-step method. the first step, thin deposited (RF) at 400 °C different powers. Following, as-sputtered further subjected to sulfurization process 600 for 60 min. Sputtering is viable route few-layer controlling radio-frequency power. A relatively simple strategy...
To overcome the environment susceptibility of flexible amorphous InSnZnO (a-ITZO) thin-film transistors (TFTs), a surface passivation method utilizing n -octyltriethoxysilane (OTES) self-assembled monolayers (SAMs) is developed. The electrical characteristics developed indicate that device performance can be enhanced upon OTES passivation, exhibiting high mobility ( -.19.4 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> V...
In this study, we demonstrated self-powered fast-response ultraviolet (UV) detection based on a highly-rectifying graphene/GaN Schottky contact. The device was fabricated by mechanically transferring monolayer graphene onto lightly-doped GaN and showed excellent behaviors, including high rectification ratio (> 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sup> ), close-to-unity ideality factor relatively barrier height (1.01 eV). At zero...
The ability to generate stable chemical gradients in microfluidics has important applications, since such are useful both and biological studies. Growing evidence reveals that many cellular responses specific non-linear spatial gradients, hence a need control complex concentration gradient profiles with within microfluidics. In this paper, we present structure-based approach linear controlled by microtunnels fabricated alongside two main channels. Using single-step photolithography, channels...
A miniature (200 μm in diameter) cylindrical-core fiber-optic oxygen sensor has been developed for measuring rapid change partial pressure (pO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ). The sensing element is based on a waveguide structure formed by coating thin medical grade polymer film that contains immobilized Pt(II) complexes silica optical fiber. performance such as sensitivity and time response of the sensors were...
Inorganic halide perovskites have been demonstrated as a promising alternative for light absorption because of their improved thermal stability compared with organic-inorganic perovskites. However, low power conversion efficiency and phase instability are major hindrances to application. Here, straightforward approach, by adding layer CsBr on the top CsPbI3, is reported high-efficiency phase-stable CsPbI3-based solar cells. Characterizations demonstrate that bromide ion can migrate from...