A5067286265- ZnO doping and properties
- GaN-based semiconductor devices and materials
- Magnetic and transport properties of perovskites and related materials
- Ga2O3 and related materials
- Magnetic properties of thin films
- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Physics of Superconductivity and Magnetism
- Electronic and Structural Properties of Oxides
- Semiconductor materials and interfaces
- Thermal Expansion and Ionic Conductivity
- Ferroelectric and Piezoelectric Materials
- 2D Materials and Applications
- Metal and Thin Film Mechanics
- Acoustic Wave Resonator Technologies
- Shape Memory Alloy Transformations
- X-ray Diffraction in Crystallography
- Nanowire Synthesis and Applications
- Magnetic Properties of Alloys
- Crystallization and Solubility Studies
- Transition Metal Oxide Nanomaterials
- Surface Roughness and Optical Measurements
- Phase-change materials and chalcogenides
- Graphene research and applications
- Copper-based nanomaterials and applications
Songshan Lake Materials Laboratory
2019-2025
Xi'an Jiaotong University
2021-2024
Helmholtz-Zentrum Dresden-Rossendorf
2014-2023
Ministry of Civil Affairs
2023
Nanjing Forestry University
2017-2022
King Abdullah University of Science and Technology
2018-2021
Hunan University
2021
Union Hospital
2020
Huazhong University of Science and Technology
2020
Peking University
2020
Dual-phase ErZn2/ErZn composite was obtained by induction-melting method. The crystallizes in the phases of ErZn2 and ErZn with weight ratio 53.8:46.2. undergoes two successive magnetic phase transitions. And accordingly peaks (partly overlapped) are appeared temperature dependence part entropy change ΔSM(T) curves which resulting a table-like magnetocaloric effect (MCE) large refrigerant capacity (RC). MCE parameters comparable or even larger than most recently reported potential materials...
The magnetic properties and the magnetocaloric effect (MCE) in TmZn have been studied by magnetization heat capacity measurements. compound exhibits a ferromagnetic state below Curie temperature of TC = 8.4 K processes field-induced metamagnetic phase transition around above TC. A giant reversible MCE was observed TmZn. For field change 0–5 T, maximum values entropy (−ΔSMmax) adiabatic (ΔTadmax) are 26.9 J/kg 8.6 K, corresponding relative cooling power refrigerant 269 214 J/kg, respectively....
Abstract The world‐wide spreading of coronavirus disease (COVID‐19) has greatly shaken human society, thus effective and fast‐speed methods non‐daily‐life‐disturbance sterilization have become extremely significant. In this work, by fully benefitting from high‐quality AlN template (with threading dislocation density as low ≈6×10 8 cm −2 ) well outstanding deep ultraviolet (UVC‐less than 280 nm) light‐emitting diodes (LEDs) structure design epitaxy optimization, high power UVC LEDs...
The microstructure, magnetism, and magnetocaloric properties in melt-spun Er0.2Gd0.2Ho0.2Co0.2Cu0.2 ribbons were reported. are fully amorphousized all the constituent elements distributed uniformly. large table-like effect (MCE) from 25 to 75 K has been observed, resulting a value of refrigerant capacity (RC). With magnetic field change (Δµ0H) 0–5 T, values maximum entropy reaches 11.1 J/kg K, corresponding RC as 806 J/kg, make amorphous extremely attractive for cryogenic refrigeration.
Increasing the free-carrier concentration in silicon is a pressing issue modern electronics. The common shallow-level donors like P and As only permit electrically active doping up to 5\ifmmode\times\else\texttimes\fi{}10${}^{20}$ cm${}^{\ensuremath{-}3}$. authors discover that, surprisingly, with deep-level Te can actually exceed this limit. Density-functional calculations unveil microscopic mechanism behind behavior: Substitutional dimers occupying adjacent Si lattice sites provide free...
Abstract Ultraviolet‐C light‐emitting diodes (UVC‐LEDs) have great application in pathogen inactivation under various kinds of situations, especially the fight against COVID‐19. Unfortunately, its epitaxial wafers are so far limited to a size 2 inches, which greatly increases cost massive production. In this work, 4‐inch crack‐free high‐power UVC‐LED wafer is reported. This achievement relies on proposed strain‐tailored strategy, where 3D 2D (3D‐2D) transition layer introduced during...
Recently, the optoelectronic memory is capturing growing attention due to its integrated function of sense and as well multilevel storage ability. Although tens states have been reported in literature, there are still three obvious deficiencies most memories: large programming voltage (>20 V), high optical power density (>1 mW cm-2), poor compatibility originating from over-reliance on channel materials. Here, we firstly propose an based a new photosensitive dielectric (PSD) architecture....
Position-sensitive photodetectors (PSDs) have been widely used for seamless, high-resolution light tracking, but applications such as aerospace and prolonged field operations require stable performance in extreme environments. Conventional PSDs, typically based on the lateral photovoltaic effect of silicon or other semiconductor junctions, are prone to radiation damage material degradation, limiting their reliability under harsh conditions. Silicon carbide (SiC), with its wide bandgap, high...
Micro-LEDs, especially small-size micro-LEDs, have attracted increasing attention for high-resolution displays and high-speed visible light communications in recent years. However, the efficiency of micro-LEDs sharply decreases with decreasing device size due to sidewall damage resulting from mesa etching. Therefore, implementation a low-damage pixelization technique is essential enhancing performance micro-LEDs. In this Letter, ion implantation (IIP) was employed improve InGaN green...
Abstract AlGaN‐based ultraviolet (UV) light‐emitting diodes (LEDs) experience a notable reduction in efficiency within the 280–330 nm wavelength range, known as “UVB gap”. Given extensive applications of UV LEDs this it is imperative to bridge gap. In study, strategy facilitated by presence residual Al adatoms introduced simultaneously improve integration Ga‐adatoms and migration Al/Ga‐adatoms during growth low‐Al‐composition AlGaN quantum wells (QWs) even at high temperatures comparable...
Quasi van der Waals epitaxy, a pioneering epitaxy of sp3 -hybridized semiconductor films on sp2 2D materials, provides way, in principle, to achieve single-crystal epilayers with preferred atom configurations that are free substrate. Unfortunately, this has not been experimentally confirmed the case hexagonal III-nitride epilayer until now. Here, it is reported gallium nitride (GaN) graphene can tune arrangement (lattice polarity) through manipulation interface atomic configuration, where...
Transferred graphene provides a promising III-nitride semiconductor epitaxial platform for fabricating multifunctional devices beyond the limitation of conventional substrates. Despite its tremendous fundamental and technological importance, it remains an open question on which kind epitaxy is preferred single-crystal III-nitrides. Popular answers to this include remote where III-nitride/graphene interface coupled by nonchemical bonds, quasi-van der Waals (quasi-vdWe) mainly covalent bonds....
In the present work, we report 25 MeV oxygen irradiation effects in n-type single crystal β-Ga2O3 at different fluences. We demonstrate that symmetric stretching modes and bending vibrations of GaO4 GaO6 units are impaired upon increasing O fluence. Blue green photoluminescence (PL) emission bands found to be mainly associated with gallium–oxygen divacancies, gallium vacancies interstitials. The increase optically active centers low fluence PL quenching high ascribed reduction carrier...
Standing spin waves in thin films with a tiny periodic surface modulation are quantized such way that multiple of their wavelength fits into one period. This paper tackles the question how these film modes evolve one-dimensional magnonic crystal consisting individual wire structures. By sequentially increasing and subsequent dynamic characterization same sample, simple transition rules found connecting both systems another.
Transcranial alternating current stimulation (tACS) is considered to have a positive effect on the rehabilitation of Alzheimer's disease (AD) as an intervention method that matches frequency neurogenesis frequency. However, when tACS delivered single target, received by brain regions outside target may be insufficient trigger neural activity, compromising effectiveness stimulation. Therefore, it worth studying how single-target restores gamma-band activity in whole hippocampal-prefrontal...
Ion implantation of Mn combined with pulsed laser melting is employed to obtain two representative compounds dilute ferromagnetic semiconductors (DFSs): $\mathrm{G}{\mathrm{a}}_{1\ensuremath{-}x}\mathrm{M}{\mathrm{n}}_{x}\mathrm{As}$ and $\mathrm{I}{\mathrm{n}}_{1\ensuremath{-}x}\mathrm{M}{\mathrm{n}}_{x}\mathrm{As}$. In contrast films deposited by the widely used molecular beam epitaxy, neither interstitials nor As antisites are present in samples prepared method here. Under these...
The crystal structure, magnetic properties and magnetocaloric effect (MCE) of GdCoC<sub>2</sub> have been studied.
Abstract In this work, based on physical vapor deposition and high-temperature annealing (HTA), the 4-inch crack-free high-quality AlN template is initialized. Benefiting from crystal recrystallization during HTA process, FWHMs of X-ray rocking curves for (002) (102) planes are encouragingly decreased to 62 282 arcsec, respectively. On such an template, ultra-thin with a thickness ~700 nm grown by MOCVD shows good quality, thus avoiding epitaxial lateral overgrowth (ELOG) process in which...