A5103141564- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Semiconductor Quantum Structures and Devices
- Photonic Crystals and Applications
- Thin-Film Transistor Technologies
- GaN-based semiconductor devices and materials
- Optical Network Technologies
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Optical Coatings and Gratings
- Silicon Nanostructures and Photoluminescence
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Measurement and Metrology Techniques
- Wireless Communication Networks Research
- Surface Roughness and Optical Measurements
- Silicon and Solar Cell Technologies
- Advanced Surface Polishing Techniques
- Heat Transfer and Boiling Studies
- Satellite Communication Systems
- Gyrotron and Vacuum Electronics Research
- Laser Design and Applications
- Spectroscopy and Quantum Chemical Studies
- Polymer Nanocomposite Synthesis and Irradiation
- Nonlinear Optical Materials Studies
- solar cell performance optimization
Nihon University
2024
Kyushu Institute of Technology
2024
Gorgias Press (United States)
2021
NTT (Japan)
2014-2020
Nagasaki University
2018
NTT (United States)
2016
Osaka University
2011-2012
Tokai University
2003-2004
High demand exists for low operating energy optical links that use wavelength division multiplexing technologies in datacenter networks. Thus, we fabricate a directly modulated membrane distributed-reflector laser with on thermally oxidized silicon (Si) substrate. Because epitaxial growth to bury an active region bonded InP-based membrane, it needs be kept within critical thickness, which is related the temperature and thermal expansion coefficients of materials. In previous studies, used...
We present a directly modulated membrane laser on high-thermal-conductivity SiC exhibiting >100-GHz bandwidth. A -40GHz relaxation oscillation frequency, owing to low thermal resistance and high optical confinement, -95-GHz photon-photon resonance are achieved. Net 239.3-Gbit/s PAM-4 transmission over 2-km standard single-mode fibre is demonstrated.
We demonstrate DML-based net 325-Gb/s at back-to-back and 321.24-Gb/s after 2-km standard single-mode fiber transmissions for >300-Gbps/λ short-reach optical interconnects. Our rate performance denotes an increase of ∼34% compared to our previous works, while the pre-FEC rates are >400 Gbps. The DML transmitter is based on a PPR-enhanced, >100-GHz-bandwidth DML, fabricated by novel membrane-III-V-on-SiC technology. Also wide-band, entropy-loaded DMT modulation utilized adaptive algorithm via...
Record DML-based 325-Gb/s (BTB) and 321.24-Gb/s (2-km SSMF) transmissions are demonstrated based on a >100-GHz bandwidth membrane DML-on-SiC, by utilizing digitally- preprocessed analog multiplexer adaptive entropy-loaded DMT modulation, surpassing our previous record ~34%.
We investigate the function of a circularly arranged submicron-scale optical cavity having GaInNAs gain medium introduced into two-dimensional photonic crystal slab. shows negligible degradations due to process damage, probably because small surface recombination velocity material. The preserved property realizes observation spectral peaks related mode at wavelengths close 1.3 µm. Moreover, fine tunability its characteristics via deliberate adjustment structure.
We demonstrate a lattice relaxation control by in situ curvature measurement for metamorphic buffer. Using this control, we investigated thin (240 nm) In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.15</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.85</sub> As buffer fabricating an unstrained xmlns:xlink="http://www.w3.org/1999/xlink">0.10</sub> xmlns:xlink="http://www.w3.org/1999/xlink">0.90</sub> quasi-substrate on GaAs substrate...
We theoretically investigate the effects of carriers supplied from a dopant in AlAs cladding layers current-driven photonic crystal laser diode. The high doping concentration reduces resistance diode, which is advantageous for practical operation. Carriers, however, bring about light loss and degradation characteristics. It thus important to effect so as determine most suitable profile layers. For some typical cavity resonators, we carry out wave simulations changes characteristics, such...
The authors demonstrated the functionality of a circularly arranged submicron scale optical cavity with GaInNAs gain medium and an AlOx cladding layer within two-dimensional photonic crystal slab. has negligible degradations due to process damage, probably stemming from suppressed diffusion carriers small surface recombination velocity material. calculated spectrum when using finite different time domain simulation provides mode containing whispering gallery at wavelength close 1.3 μm. An...
Heteroepitaxial, or metamorphic, growth enables us to overcome limitations on the performance of semiconductor devices caused by lattice-matching restriction. We have demonstrated high-crystalline-quality metamorphic grown InGaAs and GaAs/Ge layers GaAs Si substrates, respectively. The layer allows make laser diodes operating at 25 Gbit/s with high characteristic temperature 187 K 1.3-μm wavelength. Moreover, III-V compound semiconductors substrate are promising for large-scale low-cost...
We investigate the function of a circularly arranged submicron-scale optical cavity having GaInNAs gain medium introduced into two-dimensional photonic crystal slab. shows negligible degradations due to process damage, probably because small surface recombination velocity material. The preserved property realizes observation spectral peaks related mode at wavelengths close 1.3 µm. Moreover, fine tunability its characteristics via deliberate adjustment structure.
We demonstrate heteroepitaxial growth of GaAs/Ge buffer layers for fabricating 1.3-µm range metamorphic InGaAs-based multiple quantum well (MQW) lasers in which the Ge layer is grown using a metal-organic precursor, iso-butyl germane, conventional vapor phase epitaxy reactor. This enables us to grow and GaAs same reactor seamlessly. Transmission electron microscopy X-ray diffraction analyses indicate that dislocations are confined at Ge/Si interface. Furthermore, thermal-cycle annealing...
We demonstrate continuous-wave operation of 1.3-μm membrane distributed reflector lasers on SiC at a 130ºC stage temperature. The laser, with its large thermal conductivity and optical confinement, is promising for high-temperature operation.
We have achieved the first 25-Gb/s operation for a metamorphic laser with high characteristic temperature (T0=187 K) at 1.3 μm on GaAs substrate using thin buffer to suppress wafer curvature.