We show that the band gap bowing trends observed in III-V alloys containing dilute concentrations of Sb or Bi can be explained within framework valence-band anticrossing model. Hybridization extended $p$-like states comprising valence host semiconductor with close-lying localized leads to a nonlinear shift edge and reduction gap. The two $\mathrm{Ga}{\mathrm{Sb}}_{x}{\mathrm{As}}_{1\ensuremath{-}x}$ $\mathrm{Ga}{\mathrm{Bi}}_{x}{\mathrm{As}}_{1\ensuremath{-}x}$ are explored detail, results...

We report MOCVD-grown NpN InP/GaAsSb/InP abrupt double heterojunction bipolar transistors (DHBTs) with simultaneous values of f/sub T/ and MAX/ as high 300 GHz for J/sub C/=410 kA/cm/sup 2/ at V/sub CE/=1.8 V. The devices maintain outstanding dynamic performances over a wide range biases including the saturation mode. In this material system p+ GaAsSb base conduction band edge lies 0.10-0.15 eV above InP collector band, thus favoring use nongraded base-collector designs without current...

The optical properties of lattice-matched GaAsSb/InGaAs/InP heterostructures with a varying InGaAs layer thickness (0–900 Å) were investigated. These structures display strong low temperature type II luminescence, the energy which varies and ranges from 0.453 to 0.63 eV. luminescence was used determine directly accurately conduction band offset these structures. values obtained herein are 0.36 0.18 eV at 4.2 K for GaAsSb/InGaAs GaAsSb/InP heterojunctions, respectively, GaAsSb higher in energy.

InAsSb/InAs type II strain balanced superlattices lattice matched to GaSb have recently been proposed as an alternative InAs/(In)GaSb short period for mid- long infrared photodetectors. Photoluminescence data at 4 K of OMVPE grown InAsSb (multi-) quantum wells in InAs matrix on and substrates is presented Sb compositions between 4% 27%. The measured transition energies are simulated with a self-consistent Poisson Schroedinger equation solver that includes band-offsets. fitted parameters then...

We have studied the electrical transport properties of intrinsic InN nanowires using an nanoprobing technique in a scanning electron microscope environment. It is found that such exhibit ohmic conduction at low bias and space charge limited high bias. further derived can free carrier concentration as ∼1013 cm−3 possess very large mobility range 8000–12 000 cm2/V s, approaching theoretically predicted maximum room temperature. In addition, traps are to distribute exponentially just below band...

We report on the physical operation and performance of MOCVD-grown abrupt heterojunction InP/GaAs/sub 0.51/Sb/sub 0.49//InP double bipolar transistors (DHBTs). In particular, effect InP collector thickness breakdown voltage current gain cutoff frequency is assessed a f/sub T/ 106 GHz reported for DHBT with 400 /spl Aring/ base 2000 BV/sub CEO/ 8 V. show that InP/GaAsSb/InP DHBTs are characterized by weak variation as function temperature. Finally, we also demonstrate high maximum oscillation...

The growth of high-purity gallium arsenide using tertiarybutylarsine (TBA) and trimethylgallium is reported. availability TBA has permitted the material with liquid-nitrogen mobilities up to 80 000 cm2/V s, highest value yet reported for any alkyl arsine. residual donor species have been identified by magnetophotoluminescence.

We report the growth and optical characterization of InAsSb/InAs strain balanced superlattice structures on GaSb substrates for potential application in midinfrared photodetectors. Photoluminescence (PL) emission was observed range 5 μm≤λ≤10 μm at 4 K Sb compositions 0.14≤xSb≤0.27. The PL energy found to depend approximately linearly antimony, consistent with a type II band lineup. dependence energies mole fraction is agreement trends predicted by various theoretical works. data suggest that...

We demonstrate the application of a simple equilibrium model based on elasticity theory to estimate geometric limits dislocation-free core/shell nanowires (NWs). According these calculations, in coherent structure, tangential strain is dominant component shell region and it decreases quickly away from heterointerface, while axial core independent radial position. These distributions energetically favour initial relief agreement with experimental appearance only edge dislocations line...

Photoluminescence studies as well reflectance and transmittance measurements were performed on high-purity epitaxial InAs grown by metal-organic chemical-vapor deposition. We report the optical identification of excitonic, donor, acceptor impurity related transitions at a temperature 1.4 K. Measurements higher in presence magnetic fields up to 7 T support these identifications. find excitonic band gap 415.65±0.01 meV according minimum polariton feature. The donor–acceptor-pair acceptor-bound...

We study the performance of staggered lineup NpN InP/GaAsSb/InP abrupt double heterojunction bipolar transistors (DHBTs) intended for ultrahigh speed applications. With a peak fT 305 GHz (and fMAX=300 GHz), DHBTs are currently fastest ever implemented, and as such may challenge sub-100 nm gate InP HEMTs > 40 Gb/s applications: previously published criteria suggest current device should be suitable 80–100 OEICs. feature high breakdown voltages low offset knee voltages, extremely drive levels...

Irradiation damage in lithium-doped silicon gives rise to the well-known $Q$ luminescence-absorption system with no-phonon lines at \ensuremath{\sim}1.045 eV. In irradiated material a high carbon concentration second is also prominent higher energy, $S$ \ensuremath{\sim}1.082 Isotope-splitting data on indicate that optical center, like contains four lithium atoms, but near-neighbor atom. Luminescence-decay-time measurements confirm both cases luminescence may be identified exciton decay...

We measure the donor-bound electron longitudinal spin-relaxation time ($T_1$) as a function of magnetic field ($B$) in three high-purity direct-bandgap semiconductors: GaAs, InP, and CdTe, observing maximum $T_1$ $1.4~\text{ms}$, $0.4~\text{ms}$ $1.2~\text{ms}$, respectively. In GaAs InP at low field, up to $\sim2~\text{T}$, mechanism is strongly density temperature dependent attributed random precession spin hyperfine fields caused by lattice nuclear spins. all semiconductors high we...

Epitaxial layers of nominally undoped GaAs have been grown by metalorganic chemical vapor deposition using liquid tertiarybutylarsine and triethylgallium. n-type were obtained having total residual shallow acceptor concentrations ∼1013 cm−3 Hall mobilities comparable to those with arsine triethylgallium in the same reactor. Liquid-nitrogen up 116 000 cm2 /V s observed.

We present the results of detailed transient photoluminescence measurements on isoelectronic bound excitons associated with deep acceptors In and T1 in Si. The novel are explained terms a model which binding centers can exist more than one configuration, make transitions from configuration to other. Although nature center exciton states is not yet known, well described by rate equations based upon this model. Additional support provided study effects excitation pulse length Si:In results, as...

We report on the electrical properties of Te-doped GaAs nanowires (NW) grown via vapor-liquid-solid mechanism. Gold nanoparticles were used as growth catalysts and contacts for measurements using a nanoprobe technique. Semi-log I-V curves show 6-8 decades forward-voltage linearity giving an ideality factor 1.25 ± 0.06 barrier height 0.78 0.04 eV. When normalized to NW cross-sectional area, all overlapped consistent with n-type carrier concentration (9 1) × 1017 cm−3 constant resistivity (2.5...

Space-charge-limited current is often observed in semiconductor nanowires due to carrier depletion and reduced electrostatic screening. We present a numerical study on geometric scaling of the space-charge-limited nanowires, comparison with thin film bulk geometries, using an n+-n-n+-model. The model highlights effects surroundings for films shows that dielectric properties have negligible effect transport small dimensions. distribution equilibrium injected charge concentration vary as...

Electrostatic potential maps of GaAs nanowire, p-n junctions have been measured via off-axis electron holography and compared to results from in situ electrical probing, secondary emission microscopy using scanning microscopy. The built-in depletion length an axial junction was found be 1.5 ± 0.1 V 74 9 nm, respectively, with 1.53 64 nm abrupt the same end point carrier concentrations. Associated switch Te Zn dopant precursor a reduction nanowire diameter 3 1 that occurred prior center (n =...