A5101408336- Crystallization and Solubility Studies
- X-ray Diffraction in Crystallography
- 2D Materials and Applications
- Magnetic properties of thin films
- Perovskite Materials and Applications
- MXene and MAX Phase Materials
- Crystallography and molecular interactions
- Graphene research and applications
- Enzyme Catalysis and Immobilization
- Carbon dioxide utilization in catalysis
- Natural Compound Pharmacology Studies
- Biological Activity of Diterpenoids and Biflavonoids
- Multiferroics and related materials
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Theoretical and Computational Physics
- biodegradable polymer synthesis and properties
- Various Chemistry Research Topics
- Chalcogenide Semiconductor Thin Films
- Magnetic Properties and Applications
- Metallic Glasses and Amorphous Alloys
- Magneto-Optical Properties and Applications
- Science and Education Research
- Magnetic and transport properties of perovskites and related materials
- Thermal properties of materials
Jinan University
2025
University of Electronic Science and Technology of China
2023-2024
National Engineering Research Center of Electromagnetic Radiation Control Materials
2023-2024
University of Chinese Academy of Sciences
2016-2018
State Key Laboratory of Materials-Oriented Chemical Engineering
2018
Nanjing Tech University
2018
National Center for Nanoscience and Technology
2016-2017
Institute of Physics
2016-2017
We report few-layer SnSe2 field effect transistors (FETs) with high current on/off ratios. By trying different gate configurations, 300 nm SiO2 and 70 HfO2 as back only combined a top capping layer of polymer electrolyte, FET ratio 104 can be obtained. This provides reliable solution for electrically modulating quasi-two-dimensional materials electron density (over 1013 cm−2) field-effect transistor applications.
The capabilities to tune the conduction properties of materials by doping or electric fields are essential for design electronic devices. However, in two-dimensional substitutional has been achieved only a few systems, such as Nb MoS2. Surface charge transfer is still one popular ways control whether dominated holes electrons. Here, we demonstrate that capping layer cross-linked poly(methyl methacrylate) modifies potential black phosphorus (BP) so absence an external field electrons, rather...
Ultrathin SnSe nanosheets (9–20 nm) are synthesized on molten polydimethylsiloxane by chemical vapor deposition. Thickness-dependent Raman features persist even with thickness over 10 nm. Meanwhile, anisotropy of field-effect mobility along b and c axes is observed above 240 K. Finally, thermopower can be easily modified gate bias temperature. As a service to our authors readers, this journal provides supporting information supplied the authors. Such materials peer reviewed may re-organized...
Antiferromagnets are competitive candidates for the next generation of spintronic devices owing to their superiority in small-scale and low-power-consumption devices. The electrical manipulation magnetization exchange bias (EB) driven by spin-orbit torque (SOT) ferromagnetic (FM)/antiferromagnetic (AFM) systems has become focused spintronics. Here, realization a large perpendicular EB field Co/IrMn effective magnetic moments Co layer SOT Pt/Co/IrMn system is reported. During SOT-driven...
During the lactide producing process, volatile impurities, such as lactic acid and its dimer, are simultaneously distilled out with lactide. To remove these many post-treatments were needed. Herein, we present a novel approach to obtain high purity by adding high-boiling-point alcohols immobilize impurities. A series of screened pentaerythritol was found be best immobilization reagent. When molar ratio acid's carboxylic group pentaerythritol's hydroxyl 15:1, 99% GC directly no traces dimer...
In complementary metal oxide semiconductor (CMOS) technology, well-defined unipolar transport in field-effect transistors (FETs) is a basic requirement for logic operations, which can be realized by controllable doping of the with electrons (n-type) or holes (p-type). However, recent demonstration polarity 2D semiconductors provides flexible way circuit design increased integration density. Here we demonstrate conversion bidirectional rectifier to polarity-controllable transistor black...
With the development of modern computer storage technology, spin-transfer torque magnetic random-access memory (STT-MRAM) has become one most promising candidates to replace static and dynamic memory. However, its large power consumption long relaxation time before moments switch are important factors restricting commercial application. In this work, gradient-current pulses proposed conventional constant-current in injection method. A 70-nm classical CoFeB/MgO/CoFeB tunnel junction (MTJ)...
Heterostructures from mechanically-assembled stacks of two-dimensional materials allow for versatile electronic device applications. Here, we demonstrate the intrinsic charge transport behaviors in graphene-black phosphorus heterojunction devices under different carrier densities and temperature regimes. At high or ON state, tunneling through Schottky barrier at interface between graphene black dominates low temperatures. With increasing, is vanishing, channel current starts to decrease with...
The interfacial Dzyaloshinskii–Moriya interaction (DMI) acting as an essential source to stabilize spin textures in ferromagnetic ultrathin films has revealed its significant role spin–orbit torque (SOT)-driven magnetic switching. Based on a convincing homochiral Néel domain wall model, the in-plane (IP) field associated with DMI effect been confirmed prerequisite for deterministic SOT-driven Although presence of IP is required, impact magnitude combined switching different heavy metals...