Tianfu Zhang

ORCID: 0000-0002-7458-450X
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Research Areas
  • Ferroelectric and Piezoelectric Materials
  • Multiferroics and related materials
  • Microwave Dielectric Ceramics Synthesis
  • Dielectric properties of ceramics
  • Metal Extraction and Bioleaching
  • Acoustic Wave Resonator Technologies
  • Ferroelectric and Negative Capacitance Devices
  • Energetic Materials and Combustion
  • Dielectric materials and actuators
  • Nanoplatforms for cancer theranostics
  • Extraction and Separation Processes
  • Gold and Silver Nanoparticles Synthesis and Applications
  • 2D Materials and Applications
  • Magnetic and transport properties of perovskites and related materials
  • Advanced Memory and Neural Computing
  • Natural Language Processing Techniques
  • Mine drainage and remediation techniques
  • Minerals Flotation and Separation Techniques
  • Ultrasound Imaging and Elastography
  • Advanced biosensing and bioanalysis techniques
  • Topic Modeling
  • Electronic and Structural Properties of Oxides
  • Rocket and propulsion systems research
  • Nanowire Synthesis and Applications
  • Polymer composites and self-healing

University of Science and Technology Beijing
2024-2025

Kunming University of Science and Technology
2024

Harbin Institute of Technology
2022-2024

Aerospace Information Research Institute
2024

Guangzhou Medical University
2023-2024

China National Petroleum Corporation (China)
2024

Central South University
2016-2024

University of Hong Kong
2007-2023

Semiconductor Manufacturing International (China)
2023

State Power Investment Corporation (China)
2023

Size-tunable monodisperse Rh nanocrystals can offer unique properties for many heterogeneous catalytic reactions (such as hydrogenation, hydroformylation, and hydrocarbonylation) of both scientific technological interest. In this article, we report the synthesis monodisperse, well-shaped in a range 5−15 nm by one-step polyol reduction at temperatures 170−230 °C under Ar, using rhodium(III) acetylacetonate [Rh(acac)3] source metal ions, 1,4-butanediol reducing solvent, poly(vinylpyrrolidone)...

10.1021/jp073350h article EN The Journal of Physical Chemistry C 2007-08-01

(Pb1-xBax)(Zr0.95Ti0.05)O3 (x = 0, 0.025, 0.05, 0.075 and 0.1) ceramics were prepared via a solid-state reaction route. Low-frequency (20 ∼ 2 × 107 Hz) dielectric properties investigated in the temperature region of 25-650 °C. Ba2+ doping can slightly reduce phase transition ferroelectric to paraelectric. The diffuse anomaly relaxation was found high 400-650 Activation energy, calculated from impedance conductivity data samples, suggests that is due oxygen vacancies generated during...

10.1063/1.4900610 article EN cc-by AIP Advances 2014-10-01

(1 − x)Pb(Mg1/3Nb2/3)O3−xPbTiO3 (x = 0, 5, and 10 mol%) ceramics were prepared using a conventional mixed oxide solid state reaction method. The low-temperature relaxor behavior of x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 examined in the temperature range from 120 to 523 K. A broad dielectric maximum that shifted higher temperatures with increasing frequency, signified relaxor-type these ceramics. value relaxation parameter γ 1.61–1.94 estimated linear fit modified Curie–Weiss law indicated nature....

10.1088/0022-3727/49/9/095302 article EN Journal of Physics D Applied Physics 2016-02-01

Lead-free ferroelectric ceramics (1-x) BaTiO3–xBi(Mg1/2Ti1/2)O3 (x = 0.0–0.07) were synthesized by conventional solid state reaction method and the correlation of structure, dielectric, impedance properties investigated. It was found that Tm εm showed decreasing trend with increase BMT content. The high-temperature dielectric relaxation behaviour observed in all samples. activation energy calculated from (Ea) conductivity (Econd), which revealed behaviours linked migration OVs. values Ea...

10.1016/j.jmat.2018.03.001 article EN cc-by-nc-nd Journal of Materiomics 2018-03-27

Photodetectors with the ability to detect light over a broad spectral range at room temperature (RT) are attracting considerable attention because of their wide potential applications in electronic and optoelectronic devices. In this work, an ultrabroadband photodetector design based on amorphous MoS2 (a-MoS2) prepared by magnetron sputtering is reported for first time. association narrow bandgap 0.196 eV that originated from defects, these devices have realized photodetection 473 2712 nm...

10.1021/acsaelm.9b00247 article EN ACS Applied Electronic Materials 2019-06-24

Ultrahigh dose-rate (FLASH) radiotherapy is an emerging technology with excellent therapeutic effects and low biological toxicity. However, tumor recurrence largely impede the effectiveness of FLASH therapy. Overcoming crucial for practical applications. Here, we prepared agarose-based thermosensitive hydrogel containing a mild photothermal agent (TPE-BBT) glutaminase inhibitor (CB-839). Within nanoparticles, TPE-BBT exhibits aggregation-induced emission peaked at 900 nm, while unrestricted...

10.1016/j.bioactmat.2024.03.024 article EN cc-by-nc-nd Bioactive Materials 2024-04-23

Ferromagnetic insulators are receiving ever-increasing research activities driven not only by the unique advantage of low power loss during spin-wave-based information processing but also potential to construct next-generation spintronic devices. However, either exceedingly rare candidates or Curie temperature far below room greatly hinder their practical application. Here, through modulation a novel three-dimensional (3D) tensile strain, room-temperature ferromagnetic insulating state with...

10.1103/physrevlett.134.016702 article EN Physical Review Letters 2025-01-02

A flexible and transparent SERS substrate is fabricated on a PET film fast, on-site ultrasensitive detection realized.

10.1039/c8nr01628c article EN Nanoscale 2018-01-01

Among all dielectrics, antiferroelectric (AFE) materials have attracted wide attention due to the excellent energy-storage performance. In this paper, PbHfO3 (PHO) AFE films were prepared for first time and microstructure, property performance studied. X-ray diffraction analysis indicated that annealing temperature played a key role in crystallinity phase composition. Due coexistent of fine grains amorphous phase, PHO annealed at 650 °C displayed not only optimal density energy efficiency,...

10.1016/j.matdes.2021.109666 article EN cc-by-nc-nd Materials & Design 2021-03-18

The recoverable energy density and efficiency of the high electrification PLZT2/95/5 ceramic capacitors as a function temperature electric field.

10.1039/c7ra08621k article EN cc-by-nc RSC Advances 2017-01-01

High-frequency ultrasonic imaging with improved spatial resolution has gained increasing attention in the field of biomedical imaging. Sensitivity transducers plays a pivotal role determining image quality. Conventional are mostly made from lead-based piezoelectric materials that may be harmful to human body and environment. In this study, new (K,Na)NbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> -KTiNbO...

10.1109/tbme.2018.2876063 article EN IEEE Transactions on Biomedical Engineering 2018-11-19

Ba(HfxTi1–x)O3 ferroelectric ceramics were prepared by a conventional solid-state reaction process, and the correlation of structure, dielectric, ferroelectric, electrocaloric properties studied. The consequences indicated that TC decreased, while TT–O TO–R increased with increase hafnium content. Large effect values 1.64 K (117 °C) 1.21 (76 observed for x = 0.05 compositions. And, corresponding coefficients respectively 0.33 0.24 K·mm·kV–1. In addition, compared second-order phase...

10.1021/acssuschemeng.8b01277 article EN ACS Sustainable Chemistry & Engineering 2018-05-15

Abstract The unique properties and great variety of relaxer ferroelectrics make them highly attractive in energy-storage solid-state refrigeration technologies. In this work, lanthanum modified lead titanate ceramics are prepared studied. giant electrocaloric effect is revealed for the first time. Large efficiency (27.4) high adiabatic temperature change (1.67 K) achieved by indirect analysis. Direct measurements show that reversible also about 1.67 K, which exceeds many values current...

10.1038/s41598-017-18810-z article EN cc-by Scientific Reports 2018-01-04

Extremely high temperature in a chip will severely affect the normal operation of electronic equipment; however, traditional air conditioning cooling technology is unsuitable for integrated circuit cooling. It necessary to develop convenient and high-efficiency techniques. In this paper, PbHfO3 antiferroelectric (PHO AFE) film was fabricated by sol–gel method first found be promising electrocaloric (EC) material with change (ΔT ∼ −7.7 K) acceptable EC strength (|ΔT/ΔE| 0.023 K cm kV–1) at...

10.1021/acsami.1c03079 article EN ACS Applied Materials & Interfaces 2021-04-30

Electric field induced antiferroelectric-ferroelectric phase transition is a double-edged sword for energy storage properties, which not only offers congenital superiority with substantial density but also poses significant challenges such as large polarization hysteresis and poor efficiency, deteriorating the operation service life of capacitors. Here, entropy increase effect utilized to simultaneously break long-range antiferroelectric order locally adjust fourfold commensurate modulated...

10.1038/s41467-025-56194-1 article EN cc-by-nc-nd Nature Communications 2025-01-18

( Pb 1− x Ba ) ZrO 3 = 0, 0.025, 0.05, 0.075, 0.1) ceramics were synthesized by a traditional solid‐state reaction method, and the pure phase was obtained of all sintered samples. For compositions, substitution 2+ reduced transition temperature antiferroelectric to ferroelectric Curie temperature. Polarization–electric field hysteresis loops conducted typical observed in higher range. Impedance dielectric measurements studied on high relaxation. Relaxation behavior could be suppressed after...

10.1111/jace.13317 article EN Journal of the American Ceramic Society 2014-11-03

A much stronger interfacial gating effect was observed in the graphene/HfO2/Si photodetector when compared with that graphene/SiO2/Si photodetector. We found this improvement due to higher interface state density at HfO2/Si and dielectric constant of HfO2 layer. The photoresponsivity is as high 45.8 W–1. Germanium amorphous MoS2 (a-MoS2) were used prepare graphene/HfO2/Ge graphene/HfO2/a-MoS2 photodetectors, further demonstrating efficiency mechanism for photodetection. Because 0.196 eV...

10.1021/acsami.1c02738 article EN ACS Applied Materials & Interfaces 2021-05-08
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