Abstract In order to address the challenges of complex process and low precision in traditional device modeling, double hidden layer back propagation neural network (BPNN) are trained using conjugate gradient (CG) algorithm Levenberg–Marquardt (LM) algorithm, CG‐BPNN LM‐BPNN models small signal for gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) obtained analyzed here. At first, scattering parameters (S‐parameters) GaAs pHEMT divided into training set test...

ABSTRACT To improve the modeling accuracy and speed of ExtraTrees model, this paper proposes CS‐ExtraTrees model verifies effectiveness based on measured data designed microwave amplifier. The results show that: compared with Gradient Boosting, Random Forest, models, proposed in can by an order magnitude. This shows that CS algorithm has broad application prospects field microwave/radio frequency (RF) devices circuit optimization.

The design and implementation of a GaN stacked distributed 2-19GHz monolithic microwave integrated circuit (MMIC) power amplifier (PA) is presented in this paper. PA architecture uses six cells, each containing stack three transistors. A method that employs capacitance compensation applied to 5-10-W for the 2-19-GHz range 100-nm on Si technology. resulting measured performance at 28-V supply shows gain flatness 20.5 ± 1.5 dB, with an output 37.4-40.9 dBm corresponding power-added efficiency...

In this article, we present the analysis, design, and implementation of a wideband 10-W monolithic microwave integrated circuit power amplifier (PA), fabricated in low-cost 0.1-μm gallium nitride (GaN) on Si technology. The design is focused realization low-loss impedance transformation networks across 2-20 GHz using reactive matching (RM) technique. two-stage GaN PA achieves an average output 40.1 dBm peak 41.6 at 13 GHz, CW-mode operation, with smallsignal gain S <sub...

The latest research indicates that there are time-lag effects between the normalized difference vegetation index (NDVI) and precipitation variation. It is well known time-lags different from region to region, for NDVI itself correlated precipitation. In arid semi-arid grasslands, annual has proved not only be highly dependent on of concurrent year previous years, but also years. This paper proposes a method using recurrent neural network (RNN) capture both with respect itself, To...

The design and implementation of a high-gain high-power, efficient broadband monolithic microwave integrated circuit (MMIC) power amplifier (PA) using 0.1-μm GaN HEMT process is presented. For the first time, triple-stacked transistors used in non-uniform distributed to achieve high efficiency simultaneously. Further, similar stacked cell with feedback technique adopted as compact driver enhance gain performance. Measured results MMIC PA across 2 18 GHz band show at least 29 ± 1 dB...

This paper presents a nonlinear microwave device modeling technique that is based on time delay neural network (TDNN). The proposed can accurately model the devices when compared to static method. A new formulation developed allow for TDNN be trained with DC, small-signal, and large signal data, which enhance generalization of model. An algorithm formulated train efficiently. verified by GaAs metal-semiconductor-field-effect transistor (MESFET), high-electron mobility (HEMT) examples. These...

A method for predicting the dynamic spatio-temporal variations of normalized difference vegetation index (NDVI) based on precipitation is proposed using combined nonlinear autoregressive with exogenous input (NARX) networks and artificial neural (ANNs). The validated by applying to predict NDVI Hulunbuir grassland located in Inner Mongolia, China. results show good predictive ability mean absolute percentage error 11.59%, 7.11 × 10−2 root square 8.06 10−2, respectively. approach presented...

This article proposes a novel electromagnetic (EM) parametric modeling technique using combined neural networks and resistance, inductance, conductance, capacitance (RLGC)-based eigenfunctions (neuro-EF) for microwave components with two-port microstrip structures. In the proposed technique, are used to learn unknown relationship between parameters of RLGC eigenfunction geometrical parameters. The generation training data depends on obtaining correct eigenvalues different modes. However,...

This paper presents the design and measured results of a monolithic microwave integrated circuit (MMIC) T/R front-end module (FEM) suitable for S band to Ku applications, using 0.1µm GaN HEMT process. For first time, successfully 3-stacked non-uniform distributed power amplifier (SNDPA), two-stage 2-stacked low noise (LNA) switch in one MMIC, obtain ultra-broadband response Tx mode low-noise low-consumption performance Rx mode, simultaneously. Measured MMIC FEM across 2 18 GHz show that...

The monolithic microwave integrated circuit (MMIC) power amplifiers serve an essential and critical role in RF transmit/receive (T/R) modules of phased array radar systems, mobile communication systems satellite systems. Over recent years, there has been increasing requirement to develop wideband high-efficiency MMIC high (HPAs) accommodate operation reduce consumption. This paper presents a efficiency HPA for Sub-6-GHz applications using 0.25-μm gate-length D-mode GaN/SiC electron mobility...

Coarse- and fine-mesh space mapping (SM) using the mesh morphing technique has proved its efficiency in designing waveguide components with rectangle structures. This letter proposes an improved for more practically used arc Two constraint points are defined any angle to guide of curve nodes respect change geometrical parameters. New formulations proposed calculating 3-D coordinates morphed on arcs. With new formulations, elements around structures can morph smoothly, speeding up overall SM...

Purpose The purpose of this paper is to investigate the temperature reliability for a parallel high-efficiency class-E power amplifier (PA). Design/methodology/approach To explore relationship between and direct current (DC) characteristics, output power, S parameters efficiency PA quantitatively, series experiments have been designed conducted study PA. Findings From results, prominent performance degradation even failure found during testing. Furthermore, thermal shock test can cause...

In this paper, the scattering parameter (S-parameter) modeling method for heterojunction bipolar transistor (HBT) at different temperatures is investigated. The S-parameters of HBT are randomly divided into training and test sets, which modeled by radial basis function (RBF) neural network general regression (GRNN), respectively. Then, fitting results two models in predicting S-parameter displayed. experimental show that RBF good, but errors some data existed. Meanwhile most predicted GRNN...

This article proposes a simple method of designing highly efficient wideband parallel‐circuit (PC) class‐E/F 3 power amplifiers (PAs). A combination the double‐reactance compensation technique and fundamental as well third‐harmonic series‐tuned resonators is used for design PC PA output matching network. The step‐by‐step flow corresponding equations to calculate each component's value are also presented. Based on this method, simulated optimal impedances reactance network present almost...

Fast interconnect reliability analysis is needed with the rapid development of ULSI (Ultra Large Scale Integration). Therefore, we aims to use automated model generation (AMG) algorithm analyze metal interconnects. This first time AMG in field IC analysis. The can achieve data automatically, determination distribution, adaptation structure, training and testing. Using analysis, number be reduced by adaptive sampling process incorporation interpolation technique. method greatly improve...

In order to comprehensively grasp the performance changes for monolithic microwave integrated circuit (MMIC), this paper proposes that complete temperature reliability tests a 2.4–4.4 GHz gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) gain power amplifier (PA) should be investigated. The MMIC PA at different temperatures has been presented effectively. results show direct current (DC) characteristics, small-signal (S21), and radio frequency (RF) output...

In order to investigate the temperature behavior for monolithic microwave integrated circuits (MMICs) under alpine conditions, performance parameters of a 0.4-3.8 GHz gallium arsenide (GaAs) enhancement pseudomorphic high-electron-mobility transistor (E-pHEMT) low-noise amplifier (LNA) are tested at different temperatures. The typical temperatures -39.2 °C, -32.9 -25.3 -11.3 -4.9 0 °C and 23 chosen as condition. major indexes including direct current (DC) characteristics, S-parameters,...

Interconnect reliability has been regarded as a discipline that must be seriously taken into account from the early design phase of integrated circuit (IC). In order to study status and trend interconnect reliability, comprehensive review published literatures is carried out. This can depict global ICs' help new entrants understand present situation this area.

The Wiener-type dynamic neural network (DNN) approach can be used for nonlinear device modeling. analytical formulation of DNN structure consists a cascade simplified linear part and static based on Wiener system formulation. model trained to accurate relative data. Furthermore, the provides enhanced convergence properties over existing approaches such as time delay (TDNN) TDNN with extrapolation. Modeling GaAs metal-semiconductor-field-effect transistor (MESFET) is presented. In this paper,...

In order to address the complex problem of large-signal parameter extraction for microwave power devices, in this paper an X-parameter modeling approach devices based on artificial neural network (ANN) is proposed. Since extreme learning machine (ELM) and general regression (GRNN) have outstanding performance expressing nonlinearity. Thus, ELM GRNN are used model X-parameters transistors respectively. Next, sake verify effect these two models, harmonic balance experiment carried out, after...

Abstract As the key component of transceiver, power amplifier (PA) plays an extremely important role in wireless communication system. In order to accurately characterize performance variation PA at any temperature, temperature behavior a gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) gain monolithic microwave integrated circuit (MMIC) is modeled this paper. modeling, resilient back propagation neural network (BPNN) utilized do modeling for PA. The...