A5103188854- ZnO doping and properties
- Semiconductor Quantum Structures and Devices
- Ga2O3 and related materials
- Semiconductor Lasers and Optical Devices
- Advanced Semiconductor Detectors and Materials
- GaN-based semiconductor devices and materials
- Quantum Dots Synthesis And Properties
- Gas Sensing Nanomaterials and Sensors
- Copper-based nanomaterials and applications
- Advanced Photocatalysis Techniques
- Chalcogenide Semiconductor Thin Films
- Photonic and Optical Devices
- Advanced Fiber Laser Technologies
- Nanowire Synthesis and Applications
- Machine Learning in Materials Science
- Photonic Crystal and Fiber Optics
- Transition Metal Oxide Nanomaterials
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and interfaces
- Thin-Film Transistor Technologies
- Plasma Diagnostics and Applications
- Metal and Thin Film Mechanics
- Electromagnetic Launch and Propulsion Technology
- Silicon Nanostructures and Photoluminescence
- CCD and CMOS Imaging Sensors
Jilin University
2013-2022
State Key Laboratory on Integrated Optoelectronics
2011-2022
Jilin Medical University
2001-2018
State Council of the People's Republic of China
2017-2018
Nanyang Technological University
2015
University of Chinese Academy of Sciences
2011
The near-infrared light-emitting diodes using PbSe quantum dots were fabricated with the highest external efficiency of 2.52%, which is comparable to those commercial InGaAsP LEDs and visible dot electroluminescence LEDs.
One dimension CuO/CdS composites with an average diameter of 30 nm were synthesized by a solvothermal method. The operating temperature the sensors is 182 °C, and their responses improved 6 times. ultrafast response–recovery time was obtained.
Multigas sensing is highly demanded in the fields of environmental monitoring, industrial production, and coal mine security. Three near-infrared emission wavelengths from PbSe quantum dots (QDs) were used to analyze concentration three gases simultaneously through direct absorption spectroscopy, including acetylene (C2H2), methane (CH4), ammonia (NH3). The corresponding lower detection limits for 20, 100, 20 ppm, respectively, with an accuracy 2%. This study demonstrates that QDs tunable...
A sharp UV emission peak at ∼400 nm dominates the electroluminescence under reverse bias owing to tunneling effect.
This study reports ultraviolet (UV) photodetectors based on CuGaO 2 (CGO) nanoplates (NPs) and Zn‐doped CGO (CZGO) NP/ZnO nanowire (NW) heterojunctions. The vertical arrays of ZnO NWs are uniformly grown the surface hexagonal CZGO NPs form a high‐density p–n junction. heterojunctions have better optoelectronic performance parameters than pure NPs. Especially, responsivity value NW reaches 0.12 A W −1 , photo‐to‐current ratio is estimated to be 4.5. work offers new idea for rational design...
Niobium-doped ZnO (NZO) transparent conductive films are deposited on glass substrates by rf sputtering at 300° C. Effects of power the structural, morphologic, electrical, and optical properties NZO investigated x-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Hall measurement, transmission spectroscopy. The obtained polycrystalline with a hexagonal wurtzite structure preferentially oriented in (002) crystallographic direction. minimum resistivity 4.0 × 10−4...
The quantum dot‐based light‐emitting diodes (QD‐LEDs) were fabricated using blue GaN chips and red‐, yellow‐, green‐emitting ZnCuInS/ZnSe/ZnS QDs. power efficiencies measured as 14.0 lm/W for red, 47.1 yellow, 62.4 green LEDs at 2.6 V. temperature effect of QDs on these was investigated CIE chromaticity coordinates, spectral wavelength, full width half maximum (FWHM), efficiency (PE). thermal quenching induced by the increased surface device confirmed to be one important factors decrease...
This work describes a micrometer resolution and plane-array temperature-sensing method using the photoluminescence (PL) of ZnCuInS/ZnSe/ZnS quantum dots (QDs). Heavy-metal-free QDs were directly deposited on printed circuit board to analyze surface temperature devices board. An optical fiber monochromator high-powered microscope employed fabricate system which could collect temperature-dependent QD emissions from area for measurements. realizes imaging distribution in planar area....
This paper details the fabrication of n-ZnO single microwire (SMW)-based high-purity ultraviolet light-emitting diodes (UV-LEDs) with an added SiO2 barrier layer on p-Si substrate. However, current-voltage (I-V) curve exhibited non-ideal rectifying characteristics. Under forward bias, both UV and visible emissions could be detected by electroluminescence (EL) measurement. When bias voltage reached 60 V at room temperature, a emission spike occurred 390 nm originating from SMW. Compared EL...
We demonstrate CuCrO2 (CCO) nanoparticle (NP)–polyimide (PI) composite film as a saturable absorber (SA) to regulate the output characteristics of passively Q-switched fiber laser at 1.55 μm. Based on reverse and absorptions CCO NP–PI film, expressed two stages with increase pump power for substantial performance enhancement. Reverse saturation absorption is observed introduce appropriate cavity loss, which constructs effective pathways promoting both modulation depth over threshold degree,...
The near-infrared electroluminescence of InN was effectively realized by the ZnMgO/InN core–shell nanorods heterostructure on a p-Si substrate at room temperature.
Electrically pumped whispering gallery mode (WGM) lasing was observed from ZnO single microwire (SMW)/p-Si heterojunctions operated under reverse bias.
In this paper, the vertical arrays of ZnO nanowires (NWs) are uniformly grown on surface hexagonal CuGaO 2 (CGO) nanoplates (NPs) through hydrothermal method, forming high‐density p–n heterojunction. The photoluminescence (PL) properties these hetero‐assembled structures characterized, and an obvious ultraviolet (UV) emission centered at 392.32 nm has been observed. Compared with PL spectra pure NWs, UV peak red‐shift occurred spectrum broadened almost 2.5 times. A new located 398 is...