A5101481091- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Ga2O3 and related materials
- ZnO doping and properties
- Ion-surface interactions and analysis
- Plasma Diagnostics and Applications
- Hydrogen embrittlement and corrosion behaviors in metals
- Metal and Thin Film Mechanics
- Electron and X-Ray Spectroscopy Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Pigment Synthesis and Properties
- Corrosion Behavior and Inhibition
- Mobile Crowdsensing and Crowdsourcing
- Temporomandibular Joint Disorders
- 3D IC and TSV technologies
- Silicon and Solar Cell Technologies
- IoT and Edge/Fog Computing
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Photocatalysis Techniques
- Dental Radiography and Imaging
- Anodic Oxide Films and Nanostructures
- Photocathodes and Microchannel Plates
- High Entropy Alloys Studies
- Advanced Materials Characterization Techniques
WSB University
2025
Warsaw University of Technology
1998-2024
Łukasiewicz Research Network
2020-2024
Medical University of Silesia
2024
Institute of Electron Technology
2019-2020
Low‐resistivity Ohmic contacts to Gallium‐face (G‐aface) and/or Nitrogen‐face (‐Nface) n‐GaN are undoubtedly needed for high‐quality vertical power devices. Contrary Ga‐face n‐GaN, which the contact formation is a well‐established process, of low‐resistivity N‐face much more difficult due different surface properties. Despite many efforts, obtaining ohmic contacts, with ρ c < 1 × 10 −5 Ω cm 2 N face still remains achieve. Herein, results fabrication and characterization Ti/Al/TiN/Au Ga‐...
In this work, we report fabrication and characterization of high breakdown voltage current injection vertical gallium nitride (GaN)-on-GaN p-n diodes with an etched mesa structure guard rings termination on ammonothermally grown bulk GaN substrates. Bright electroluminescence from active region under forward bias was observed intensity near band edge emission low defect unintentional impurities-related bands. Fabricated devices were characterized by a up to 1940 V, on/off ratio over...
The electrical and physical properties of the SiC/SiO2 interfaces are critical for reliability performance SiC-based MOSFETs. Optimizing oxidation post-oxidation processes is most promising method improving oxide quality, channel mobility, thus series resistance MOSFET. In this work, we analyze effects POCl3 annealing NO on metal-oxide-semiconductor (MOS) devices formed 4H-SiC (0001). It shown that combined can result in both low interface trap density (Dit), which crucial application SiC...
Purpose This paper aims to investigate the sintering and solid liquid interdiffusion bonding (SLID) techniques attach AlGaN/GaN-on-Si chips direct bond copper (DBC) substrate. The influence of metal layers deposited on backside dies assembly process is also investigated. Design/methodology/approach authors assumed value shear strength be a basic parameter for evaluation mechanical properties. Additionally, surface condition after shearing was assessed by SEM photographs studied X-ray...
The damage-induced voltage alteration (DIVA) contrast mechanism in scanning electron microscope (SEM) has been studied broad range of the primary beam energies, with a special emphasis on ultra-low energy range. SEM imaging related to resistivity changes In(0.55)Al(0.45)P irradiated He2+ ions 600 keV was subjected an analysis 10 down eV energies. problem specimen charging and its effect images tackled for first time. Contrary expectations based classical total emission yield approach,...
One of the key elements vertical high‐voltage GaN‐based devices is a properly designed junction termination extension (JTE) structure. approaches to fabrication JTE structures use p‐type epitaxial layers and their appropriate shaping obtain high values breakdown voltage. In this work, optimization two‐zone (TZ) step‐etched for GaN power using technology computer aided design simulations presented. Two constructions device are used, with single‐zone (SZ‐JTE) TZ‐JTE (TZ‐JTE) The dependence...
Low‐angle bevel mesa structures are the key technological ideas needed to produce high‐quality vertical GaN devices. Nevertheless, literature lacks sufficient information regarding techniques that can yield best results for obtaining angles smaller than approximately 5°. [ 1 ] Notably, high p–n junctions N A /N D ratios, such low necessary application of negative beveled edge termination and efficient lowering electric field at surface. 1–6 In this work, optimization beveled‐mesa fabrication...
Herein, the fabrication and characterization of vertical GaN trench‐MOSFETs on ammonothermally grown bulk substrates have been reported. A number technological processes developed, including, among others, low‐resistance ohmic contacts to Ga‐face n‐GaN epitaxial layers, N‐face backside contact, sidewall trench etching processes, surface preparation, atomic layer deposition gate dielectric layers integrated with process flow power devices. The fabricated test structures are characterized by...
Background/Objectives: The aim of this study was to evaluate the function treated temporomandibular joint based on analysis image articular path using Cadiax device depending choice treatment method for unilateral condylar fracture mandible. Methods: Sixty patients who were fractures mandible at Maxil-lofacial Surgery Department in Katowice qualified range movements mandibular heads device. From group suffered mandible, including processes, finally measurement injured and healthy according...
Magnetoresistance and Hall effect in (Ga,Mn)N, (Ga,Mn,Si)N, (Ga,Fe)N bulk crystals has been studied the temperature range from 4.2 K to 300 K. No anomalous contribution voltage vs. magnetic curve found. The negative magnetoresistance found only samples with metallic type of conductivity is interpreted as resulting weak localization current carriers. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
The damage-induced voltage alteration (DIVA) contrast mechanism in scanning electron microscope (SEM) at low energy has been presented as a fast and convenient method of direct visualization increased resistivity induced by energetic ions irradiation gallium nitride (GaN). Epitaxially grown GaN layers on sapphire covered with metallic masks etched windows were subjected to He2+ irradiations 600 keV energy. resulting two-dimensional damage profiles the samples cross-sections imaged SEM...
The aim of the study was to elucidate influence parameters magnetron sputtering process on growth rate and quality titanium dioxide thin films. TiO<sub>2</sub> films were produced two inch silicon wafers by means method. Characterization samples performed using ellipsometer atomic force microscope (AFM). Currentvoltage (I-V) capacitance-voltage (C-V) measurements also carried out. results enable determine impact pressure, power, gases flow duration physical obtained layers such as electrical...
Low-kV scanning electron microscopy imaging was used to visualize the 2D profiles of internal resistivity distribution in 600 keV He2+ ion-irradiated epitaxial GaAs and Al(0.55)Ga(0.45)As. The influence dopant concentration on DIVA (damage-induced voltage alteration) contrast formation has been studied this paper. threshold irradiation fluencies (the below which no damage-related is observed) were defined for each material. results show that same level damage material caused by ion becomes...