A5078228618- ZnO doping and properties
- Ga2O3 and related materials
- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Metal and Thin Film Mechanics
- Microstructure and mechanical properties
- Aluminum Alloys Composites Properties
- Electronic and Structural Properties of Oxides
- Advanced Photocatalysis Techniques
Łukasiewicz Research Network
2022-2024
Institute of Microelectronics
2024
In this work, the structure of Ti/Al/TiN/Au contact layer stack on N-face a single-crystal n-GaN substrate is studied after heat treatment at 750 °C. Since TiN widely regarded as diffusion barrier in stack, formed structures with three different initial thicknesses (15, 60 and 90 nm) layers are investigated detail. The primary tool used for structural investigations was (scanning) transmission electron microscope ((S)TEM). all samples low resistivity ohmic formed. However, has not completely...
Magnesium nanostructures find increased use in applications for hydrogen storage, catalysis, waste treatment, and heat storage to name a few. Currently, most nanoparticles are made using chemical synthesis approach, necessitating the of organic solvents yielding material covered ligands. To apply these nanoparticles, one has them paints or slurries coating surfaces, which again produces waste. In this communication we explore possibilities making magnesium by physical technique magnetron...
In this work, Ni/ZnO:Al and Au/ZnO:Al structures are proposed as efficient ohmic contacts to p-GaN. Through a careful selection of deposition parameters annealing environment, we not only achieve the formation high-quality but also gain insights into interfacial reactions, enhancing understanding conventional Ni/Au contact on particular, notion that presence NiO at interface is enough for an form challenged by showing in fact it has be formed from metallic Ni additional oxygen. An Au-based...
Herein, the fabrication and characterization of low‐resistance all‐oxide transparent vertical β ‐Ga 2 O 3 diodes using indium tin oxide (ITO) aluminum‐doped zinc (AZO) Schottky contacts are reported. It is shown that an ITO ohmic contact to n + ‐ substrate formed after annealing in N at 800 °C. Both AZO‐ ITO‐based show well‐behaved current–voltage characteristics. Average barrier heights ideality factors 0.99 1.05 eV 0.95 1.03 for AZO contacts, respectively. The on‐off current ratio about...