A conductive diamond surface with highest yet reported sheet conductivity and unsurpassed thermal stability is shown to be due transfer doping of hydrogen terminated by a molybdenum trioxide (MoO3). Surface conductivities, as determined Hall Effect measurements function temperature for different MoO3 thicknesses, have yielded total areal hole densities ranging from 7 × 1013 cm−2 1 1014 cm−2, exceeding those H2O doped diamond.

Relaxor ferroelectrics exhibit a unique competition between long-range and short-range interactions that can be tuned electrically, which prioritizes these materials in broad range of electro-mechanical energy-conversion technologies, including biomedical imaging electric-charge generators. Here, we demonstrate differential negative piezoresponse by utilizing the relaxor ferroelectrics. The effect was observed over temperature with local spectroscopy unpoled samples, while no when material...

Scanning tunneling spectroscopy in the shell-filling regime was carried out at room temperature to investigate size dependence of band gap and single-electron charging energy single Si quantum dots (QDs). The results are compared with model calculation. A 12-fold multiple staircase structure observed for a QD about 4.3 nm diameter, reflecting degeneracy first level, as expected from theoretical calculations. systematic broadening peaks decreasing dot diameter is attributed reduced barrier...

Discrete jumps are observed in the emitted current density (J) versus extraction electric field (E) curves electron emission measurements from a conductive, hydrogen-terminated air-exposed diamond surface. These well reproduced by computations based on assumption that 2D nanoscale quantum system with discrete energy levels exists near-surface layer. The present results confirm formation of well-defined states holes surface layer hydrogenated surfaces.

Abstract Until now, phosphorus is the best substitutional dopant for n‐type diamond. Its incorporation usually achieved using phosphine gas. However, organic precursors of have been recently investigated. Among them, tertiarybutylphosphine (TBP) appears as an alternative to phosphine. In this report, we investigate doping diamond with liquid TBP metal‐organic chemical vapour deposition (MOCVD) technology incorporation. Our first results precursor are compared published gaseous phosphorus. (©...

Abstract The metal‐insulator phase transitions in V 2 O 3 are considered archetypal manifestations of Mott physics. Despite decades research, the effects doping, pressure, and anisotropic strains on still debated. To understand how these parameters control transitions, anisotropically strained pure films explored with nearly same contraction along c ‐axis, but different degrees ab‐plane expansion. With small expansion, behave similar to bulk under hydrostatic pressure. However, large driven...

We present direct experimental evidence of quantum confinement effects in single isolated nanodiamonds by scanning tunneling spectroscopy. For grains smaller than 4.5 nm, the band gap was found to increase with decreasing nanodiamond size and a well-defined, evenly spaced, 12-peak structure observed on conduction side conductance curves. attribute these peaks Coulomb blockade effect, reflecting 12-fold degeneracy first electron-energy level confined nanodiamond. The results shed light...

The transfer doping of diamond surfaces has been applied in various novel two-dimensional electronic devices. Its extension to nanodiamonds (ND) is essential for ND-based applications many fields. In particular, understanding the influence crystallite size on desirable. Here, we report results a detailed study energetic band structure single, isolated transfer-doped with nanometric resolution using combination scanning tunneling spectroscopy and Kelvin force microscopy measurements. show how...

Copper (Cu) has been extensively used as an interconnect material for microelectronic devices because of its high electrical and thermal conductivity excellent electromigration resistance. However, the formation relatively rough Cu surfaces ( approximately 5 nm roughness) Cu-oxide layers upon exposure to air still hinders their reliable application in a wide range fields. In this article, we show potential values highly stable ultrasmooth polycrystalline bare obtained by simple annealing...

The electronic configuration of a set PbSe/PbS core-shell colloidal quantum dots (CQDs), with common core radius 1.5 nm having PbS shell variable width from 0.75 to 2.5 nm, was investigated by scanning tunneling spectroscopy. conductance resonance spectra were correlated band process, monitoring the individual levels conduction and valence bands. energy gap various samples, derived spectra, compared values measured absorption as well theoretical evaluation, using extended four-band envelope...

In this letter, we report on the proof of a concept an innovative delta doping technique to fabricate ensemble nitrogen vacancy centers at shallow depths in (100) diamond. A doped layer with concentration ∼1.8 × 1020 cm−3 and thickness few nanometers was produced using method. Nitrogen realized by producing stable terminated (N-terminated) diamond surface RF nitridation process subsequently depositing thin N-terminated surface. The its stability upon exposure chemical vapor deposition...

The lack of a shallow donor in diamond with reasonable room temperature conductivity has been major obstacle, until now, for the realization many based electronic devices. Most recently it shown that exposure p-type (B doped) homoepitaxial layers to deuterium plasma can result formation n-type state (Ea=0.34eV) and high mobility (430cm2∕Vs) [Z. Teukam et al., Nat. Mater. 2, 482 (2003); C. Saguy Diamond Relat. 13, 700 (2004)]. Experimental results, on comparison secondary ion mass...

We propose and demonstrate a metal-insulator-semiconductor (MIS) structure with gate insulator based on HfNO–HfTiO nanolaminate stack that has total thickness of ∼5 nm. Two types electrodes, Au Cr, were used their corresponding performances compared. Advanced analytical characterization techniques to study the influence annealing structural, compositional, electrical characteristics. distinct amorphous layers observed in cross-sectional high resolution transmission microscopy independent...

We report that annealing of an oxidized InSb (100) single-crystal sample at 250°C under molecular hydrogen flow [molecular cleaning (MHC)] results in complete desorption the surface oxides. Following this process, morphology is found to be very smooth nanometric scale without any droplet structure and a nearly 1:1 In:Sb stoichiometry. MHC was applied remove native oxide epi-ready InSb(100) substrate used for beam epitaxy growth films. These suggest can as effective process epitaxial film growth.

Hydrogen-terminated, humidity-exposed type-IIa diamond exhibits high-surface $p$-type conductivity explained by the electrochemical transfer-doping model. According to this model, electrons transfer from valence band into an adsorbed water layer on surface, leaving behind a hole accumulation layer, thus forming two-dimensional quantum well with discrete energy levels. In paper, existence of surface upward bending and detailed structure levels in thus-formed are investigated. Ultrahigh vacuum...

Cross-sectional scanning tunneling microscopy (XSTM) and high-angle annular dark-field transmission electron (HAADF-STEM) are applied for characterizing the MBE-grown short-period InAs/GaSb superlattices mid- long-wavelength infrared detection. The focus of this study is on atomic intermixing in close proximity to interfaces, which a key issue device performance. HAADF-STEM permits visualization anion-cation dumbbells individual sub-layers even capable resolve anions cations separated by...

We show that deuteration of a series boron-doped (100) diamond epitaxial layers can lead to p-type n-type conversion. The epilayers have electrical conductivities few S/cm at 300 K. These values are factor 103–105 higher than the achieved with phosphorus doping. This is consequence shallow donor character deuterium-related donors inducing conversion (ionization energy 0.34 eV) and high concentrations. also these formed in two-step process. First, all acceptors form (B, D) complexes one...